Search results for "Deposit"

showing 10 items of 1447 documents

In situ micro-Raman and X-ray diffraction study of diamonds and petrology of the new ureilite UAE 001 from the United Arab Emirates

2008

International audience; A new olivine-pigeonite ureilite containing abundant diamonds and graphite was found in the United Arab Emirates. This is the first report of a meteorite in this country. The sample is heavily altered, of medium shock level, and has a total weight of 155 g. Bulk rock, olivine (Fo79.8-81.8) and pyroxene (En73.9-75.2, Fs15.5-16.9, Wo8.8-9.5) compositions are typical of ureilites. Olivine rims are reduced with Fo increasing up to Fo96.1-96.8. Metal in these rims is completely altered to Fehydroxide during terrestrial weathering. We studied diamond and graphite using micro-Raman and in situ synchrotron X-ray diffraction. The main diamond Raman band (LO=TO mode at ~1332 c…

in-situ XRD010504 meteorology & atmospheric sciencesMaterial properties of diamondMineralogyDiamondUreiliteChemical vapor depositionengineering.material010502 geochemistry & geophysicsureilite01 natural sciencesDiamond typesymbols.namesakeGeophysicsMeteoritediamondSpace and Planetary Sciencesymbolsengineeringmicro-RamanGraphiteRaman spectroscopyGeology0105 earth and related environmental sciences[SDU.STU.MI]Sciences of the Universe [physics]/Earth Sciences/Mineralogy
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L'habitat néolithique récent de Geispolsheim "Forlen" (Bas-Rhin) : contribution à la périodisation de la culture de Munzingen et à l'étude de ses rel…

2011

The recent Neolithic site of Forlen in Geispolsheim, attributed to the recent Munzingen, has yielded a series of enclosures containing ceramic forms unprecedented in the context of Munzingen B. We have detected the influence of late productions by the Pfyn culture and propose the identification of a new stage in the recent Munzingen, which we have unoriginally named Munzingen C, and is typified by the appearance of ceramic forms with rounded profiles. This episode may date from around 3650-3550 BC, a late dating that has been confirmed by two carbon 14 tests. The discovery allows a strong claim to be made that ancient trading networks that linked the Rhine Valley with the Swiss Plateau and …

inhumationSwiss Plateau[SHS.ARCHEO] Humanities and Social Sciences/Archaeology and PrehistoryPfyn[SHS.ARCHEO]Humanities and Social Sciences/Archaeology and PrehistoryMunzingenburialanimal depositpotteryAlsacePlateau suisseLac de Constancepériodisation[ SHS.ARCHEO ] Humanities and Social Sciences/Archaeology and PrehistoryLake Constancedépôt d'animauxA lsacecéramique
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Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride

2002

Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.

inorganic chemicalsAmorphous siliconMaterials sciencePhotoluminescenceSilicon oxynitrideSiliconNanocrystalline siliconAnalytical chemistrychemistry.chemical_elementCathodoluminescenceChemical vapor depositionmedicine.disease_causechemistry.chemical_compoundchemistrymedicineUltraviolet2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)
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Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

2010

The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…

inorganic chemicalsAmorphous siliconMaterials scienceSiliconAnnealing (metallurgy)Band gapeducationGeneral Physics and Astronomychemistry.chemical_elementSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaCondensed Matter::Materials Sciencechemistry.chemical_compoundsymbols.namesakePlasma-enhanced chemical vapor depositionHall effectSi-H bondingElectrical measurementsCondensed matter physicsHall effecttechnology industry and agricultureoptical gapCondensed Matter::Mesoscopic Systems and Quantum Hall EffectAmorphous solidchemistryHydrogenated amorphous siliconsymbolsdark conductivityRaman spectroscopypsychological phenomena and processes
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Atomic Layer Deposition of Aluminum Oxide on TiO2 and Its Impact on N3 Dye Adsorption from First Principles

2011

The atomic layer deposition of aluminum oxide on an OH-terminated TiO2(101) anatase surface was studied employing density functional theory calculations. The formation of the Al2O3−TiO2 interface during the first atomic layer deposition cycle was modeled by studying the dissociative adsorption of an Al(CH3)3 precursor, followed with a H2O-pulse reaction step that changes the surface termination. Calculations provide evidence for the formation of a discontinuous, atomically rough aluminum oxide layer after the first cycle. To explore the role of the aluminum oxide layer on adsorption of a ruthenium-based N3 dye molecule, various adsorption geometries were investigated. Calculations show that…

inorganic chemicalsAnataseMaterials scienceta114Reaction stepInorganic chemistrychemistry.chemical_elementBlock (periodic table)Surfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsRutheniumAtomic layer depositionGeneral EnergyAdsorptionchemistryChemical engineeringDensity functional theoryPhysical and Theoretical ChemistryLayer (electronics)ta116Journal of Physical Chemistry C
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Investigation of Activities for Pt-M Bimetallic Nanoparticles Catalysts on the Oxygen Reduction Reaction

2015

Bi-metallic Pt3Ni/C and Pt3Co/C electrocatalysts were successfully synthesized by a solvent free chemical vapour deposition method with a narrow particle size distribution. The results showed that the electrochemical surface area was increased by adding the additional Ni or Co to a pure Pt catalyst. Pt3Ni/C catalyst exhibited a significant enhancement of oxygen reduction reaction activity. The catalysts were characterized by EDS, XRD, HRTEM and electrochemical activity was determined using cyclic voltammetry.

inorganic chemicalsMaterials scienceChemical engineeringNanoparticleChemical vapor depositionCyclic voltammetryCondensed Matter PhysicsElectrocatalystHigh-resolution transmission electron microscopyElectrochemistryBimetallic stripElectronic Optical and Magnetic MaterialsCatalysisFerroelectrics
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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

2019

Abstract The structural and the electronic properties of monolayer graphene made by chemical vapor deposition and transferred on various oxide substrates ( SiO 2 , Al 2 O 3 , and HfO 2 ) are investigated by Raman Spectroscopy and Atomic Force Microscopy in order to highlight the influence of the substrate on the features of p-doping obtained by O 2 thermal treatments. By varing the treatment temperature up to 400 °C, the distribution of the reaction sites of the substrates is evaluated. Their total concentration and the consequent highest doping available is determined and it is shown that this latter is linked to the water affinity of the substrate. Finally, by varing the exposure time to …

inorganic chemicalsMaterials scienceDiffusionOxide02 engineering and technologyChemical vapor depositiondoping010402 general chemistry01 natural sciencesGraphene Thermal doping Substrate effectslaw.inventionsymbols.namesakechemistry.chemical_compoundAdsorptionlawGeneral Materials ScienceGrapheneDopinggraphenetechnology industry and agricultureSubstrate (chemistry)General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesChemical engineeringchemistrysymbols0210 nano-technologyRaman spectroscopyhigh-k dielectrics
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Comparative study of initial stages of copper immersion deposition on bulk and porous silicon

2013

Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, dens…

inorganic chemicalsMaterials scienceImmersion depositionSiliconNanochemistryNanoparticlechemistry.chemical_elementNanotechnologyPorous siliconcomplex mixtureschemistry.chemical_compoundHydrofluoric acidMaterials Science(all)Porous siliconnanotechnology nanotechnology and microengineering nanoscale science and technologyGeneral Materials ScienceNano ExpressNanocrystalline silicontechnology industry and agricultureCondensed Matter Physicsequipment and suppliesCopperstomatognathic diseasesElectron backscatter diffractionChemical engineeringchemistrycopper nanoparticles; electron backscatter diffraction; immersion deposition; nanotechnology nanotechnology and microengineering nanoscale science and technology; porous siliconCopper nanoparticlesElectron backscatter diffractionNanoscale Research Letters
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Optimized bath for electroless deposition of palladium on amorphous alumina membranes

2006

A new bath for the electroless deposition of palladium on anodic alumina (AA) membranes is proposed. It was found that the optimal conditions for the uniform deposition of palladium, with minimal damage to the AA membranes, were under conditions of pH 8.4 and plating times shorter than 30 min. The deposited Pd layer was detected by X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis. The morphology of the AA membrane before and after plating was examined by scanning electron microscopy (SEM). EDX analysis revealed that palladium was deposited only on the surfaces of the membrane and Sn ions, coming from the sensitizing bath, were incorporated into the palladium layer. EDTA in…

inorganic chemicalsMaterials scienceScanning electron microscopeInorganic chemistrychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidMembranechemistryAluminiumPlatingMaterials ChemistryFourier transform infrared spectroscopyElectroless deposition Palladium Dehydrogenation Anodic alumina membranesLayer (electronics)PalladiumSurface and Coatings Technology
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Determination of the Boron/Lead Ratio in Ceramic Materials Based on Electrochemical Quartz Crystal Microbalance

2004

A method for quantitatively determining the relationship boron/lead in ceramic materials is presented. It is based on the attachment of microsamples of ceramic frits to an electrochemical quartz crystal microbalance (EQCM). After a reductive deposition step in the � 0.25 to � 0.85 V (vs. AgCl/Ag) potential range, well-defined stripping peaks are recorded in 0.10 M NaCl plus 0.10 M mannitol. The deposition of boron and lead from suspensions of solid materials, and its subsequent oxidative dissolution can be monitorized at the EQCM. The quotient between the maximum mass gain and the corresponding charge passed enables for a direct quantitation of the boron/lead molar ratio in ceramic material…

inorganic chemicalsMaterials scienceStripping (chemistry)chemistry.chemical_elementQuartz crystal microbalanceCeramic materialsElectrochemistryAnalytical Chemistrychemistryvisual_artElectrochemistryvisual_art.visual_art_mediumDeposition (phase transition)CeramicBoronVoltammetryDissolutionElectroanalysis
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