Search results for "Diode"
showing 10 items of 469 documents
CMOS Photodiode Design for Gamma Camera Application
2008
We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.
Characteristics of laser operation at 1064 nm in Nd:YVO_4 under diode pumping at 808 and 914 nm
2011
International audience; A comparative study between 808 and 914nm pumping of Nd:YVO4 crystals for laser operation at 1064nm has been carried out. Using similar setups, performances of both configurations were first studied in the continuous wave, small-signal gain, and Q-switched regimes. Thanks to a numerical model, it is shown that fluorescence quenching and upconversion processes limit the possible uses for the 914nm pumping scheme to regimes with low population inversions
Light transmittance of zirconia as a function of thickness and microhardness of resin cements under different thicknesses of zirconia
2012
Objective: The objective of this study was to compare microhardness of resin cements under different thicknesses of zirconia and the light transmittance of zirconia as a function of thickness. Study design: A total of 126 disc-shaped specimens (2 mm in height and 5 mm in diameter) were prepared from dual-cured resin cements (RelyX Unicem, Panavia F and Clearfil SA cement). Photoactivation was performed by using quartz tungsten halogen and light emitting diode light curing units under different thicknesses of zirconia. Then the specimens (n=7/per group) were stored in dry conditions in total dark at 37°C for 24 h. The Vicker's hardness test was performed on the resin cement layer with a micr…
Comparative study of the radiopacity of resin cements used in aesthetic dentistry
2015
PURPOSE. The aim of this study was to compare the radiopacity of 6 modern resin cements with that of human enamel and dentine using the Digora digital radiography system, to verify whether they meet the requirements of ANSI/ADA specification no. 27/1993 and the ISO 4049/2000 standard and assess whether their radiopacity is influenced by the thickness of the cement employed. MATERIALS AND METHODS. Three 3-thickness samples (0.5, 1 and 1.5 mm) were fabricated for each material. The individual cement samples were radiographed on the CCD sensor next to the aluminium wedge and the tooth samples. Five radiographs were made of each sample and therefore five readings of radiographic density were ta…
Intensity output and effectiveness of light curing units in dental offices
2018
Background The aims of the study were measuring the light intensity of light curing units used in Qazvin's dental offices, determining the relationship between the clinical age of these units and their light intensity, and identifying the reasons for repairing them. Material and Methods In this cross-sectional study, the output intensity of 95 light curing devices was evaluated using a radiometer. The average output intensity was divided up into four categories (less than 200, 200-299, 300-500, and more than 500 mW/cm2). In addition, a questionnaire was designed to obtain information mainly about the type, clinical age, and frequency of maintenance of the units and the reasons for fixing th…
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
Measurement of the transition dipole moment of silane 28SiH4 by diode laser spectroscopy
1992
Abstract A tunable diode laser IR spectrometer which is being used in various molecular spectroscopy experiments is described. Absorption spectra observed in the ( ν 1 , ν 3 ) dyad of silane 28 SiH 4 yield estimates of two parameters of the dipole moment operator responsible for absorbance in this region.
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011
We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …