Search results for "Diode"
showing 10 items of 469 documents
Clinical measurements analysis of multi-spectral photoplethysmograph biosensors
2014
The developed portable multi-spectral photoplethysmograph (MS-PPG) optical biosensor device, intended for analysis of peripheral blood volume pulsations at different vascular depths, has been clinically verified. Multi-spectral monitoring was performed by means of a four – wavelengths (454 nm, 519 nm, 632 nm and 888 nm) light emitted diodes and photodiode with multi-channel signal output processing. Two such sensors can be operated in parallel and imposed on the patient’s skin. The clinical measurements confirmed ability to detect PPG signals at four wavelengths simultaneously and to record temporal differences in the signal shapes (corresponding to different penetration depths) in normal a…
Clinical measurements with multi-spectral photoplethysmography sensors
2012
A portable multi-spectral photoplethysmography device has been used for studies of 40 subjects. Multi-spectral monitoring was performed by means of a four - wavelengths (465 nm, 530 nm, 630 nm and 870 nm) light emitted diodes (LED) and a single photodiode with multi-channel signal output processing. The proposed methodology and potential clinical applications are discussed.
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
2008
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.
Diode laser reliability in dynamic laser speckle application: Stability and signal to noise ratio
2018
Abstract The biospeckle, or dynamic laser speckle, is used as a potential tool to monitor activity in many biological and non-biological materials from agriculture to medicine, and it is usually based on the use of He-Ne and diode lasers, the latter of which has great potential to be embedded in portable equipment. Some queries about the stability of the diode laser were raised, such as the real influence of the mode hopping phenomenon as a drawback in solid-state devices in comparison to the well-known He-Ne lasers, and thus we decided to test it . In addition, we present an alternative way to enhance the stability and the signal-to-noise ratio of the information using a relative index rat…
Multilayer (Al,Ga)N Structures for Solar-Blind Detection
2004
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…
High Temperature SiC Blocking Diodes for Solar Array
2009
This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170°C to 270°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward …
Broadband Fabry–Pérot Resonator From Zerodur for Laser Stabilisation Below 1KHZ Linewidth With < 100 HZ/S Drift and Reduced Sensitivity to Vibrati…
2015
Abstract Here we demonstrate the results of creating a two-mirror Fabry-Pérot resonator (FPR) that allows achieving the spectral width of a stabilised laser line below 1 kHz. It had low expansion Zerodur spacer and broadband high reflectance mirrors (99.85% in the range of 630 to 1140 nm). FPR was vertically mid-plane mounted for reduced sensitivity to vibrations and included in two shields inside a vacuum chamber to lower temperature fluctuations. Peltier element was used for temperature stabilisation at zero-expansion temperature. Pound-Drever-Hall (PDH) technique was applied. The signal from FPR was compared to ultra-stable signal (of about 1 Hz linewidth) to form a beat note signal. For…
Schottky barrier height tuning by Hybrid organic-inorganic multilayers
2014
ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…
Molecular Semiconductors &mdash; Doped Insulator (MSDI) heterojunctions as new conductometric devices for chemosensing in wet atmosphere.
2015
Most of the gas sensors are based on resistors with inorganic materials and more rarely on other conductometric devices (diodes or transistors). Conductometric sensors have also been designed with molecular materials. Thus, in 2009, Molecular Semiconductor — Doped-insulator (MSDI) heterojunctions were built around a heterojunction between a molecular semiconductor (MS) and a doped-insulator (DI). The MS must be more conductive than the sublayer to take advantage of the heterojunction. The MS is generally of p-type and DI can be of p-type (p-MSDI) or n-type (n-MSDI) material. The energy barrier at the interface depends on the difference in the charge carrier density in the two layers, leadin…
Hybrid Inorganic‐Organic White Light Emitting Diodes
2020
This chapter reviews the state of the art of materials, technologies, characterizations, process and challenges concerning hybrid white light‐emitting diodes (LEDs). Here, for a “hybrid LED” we mean a device based on a layer of organic phosphors (or a mix of inorganic and organic ones) pumped by a high‐energy inorganic LED. Light is emitted by a frequency down‐conversion (sometimes simply named color‐conversion) process. Benefits and weak spots of this technology are investigated with a special attention for the materials involved into the process of frequency down‐conversion, in order to envisage the future impact of the hybrid lighting technology among the well‐established inorganic ones.