Search results for "Dopant"

Citrate-nitrate auto-combustion synthesis of perovskite-type nanopowders: A systematic approach

2009

Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors

2008

Gas sensors with small dimensions offer the advantage of electrical sensitivity modulation. However, their actual use is hindered by drift effects that exceed those of usual metal-oxide sensors. We analyzed possible causes and found the best agreement of experimental data with the model of internal dopant fluctuations. The dopants are oxygen vacancies exhibiting high drift-diffusion coefficients under the impact of electrical fields. Thus, the width parameters of space charge regions, which again control the sensor current, are undergoing slow changes. Moreover, the dopant distributions cause internal electrical fields that yield drift even after voltage switch-off. This behavior has been p…

Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals

1997

Abstract A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized …

The peculiarities of colour centre production in doped alkali halides

1996

The peculiarities of colour centre production and recombination in KBr, KI crystals doped with Tl, In are examined. The photostimulated dopant ion luminescence (PSL response) follows that of the F-centre production in the subnanosecond time range. It is concluded that the radiation defects in a doped crystal are spatially distributed in the near vicinity of the dopants. To a limited extent the photo- and thermostimulated defect recombination also takes place near the dopant.

Storage of information in lithium niobate single crystals

2011

Reported studies of recording information were made with a number of LiNbO 3 compositions: stoichiometric and congruent single crystals. The present study shows that recording is possible in pure LiNbO 3 single crystals and in single crystals containing inactive cation dopants. Recording in stoichiometric crystals is likely possible because of a considerable amount of electrons localised in shallow traps. Absence of recorded information in pure congruent crystals were observed.

The Effects of 3d Admixtures on Properties of Relaxor PLZT8/65/35 Ceramics

2012

A study of the effects of the 3d dopants Mn, Fe, Co, Ni, and Cu on relaxor behavior and other properties of the ferroelectric PLZT8/65/35(La8) ceramic compound by X-ray diffraction, electron microscopy and other techniques is reported. The complex dielectric permittivity ϵ* = ϵ′-iϵ′′ is measured in the 20–400°C range of temperature at frequencies within the range of 102 – 106 Hz. Essential changes caused by the admixtures in the behavior of dielectric permittivity with frequency and temperature are observed along with changes in the XRD SEM patterns are observed. The mechanisms of the phenomena are discussed.

Optimization of impurity profile for p-n junction in heterostructures

2005

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

Urbach absorption edge of silica: reduction of glassy disorder by fluorine doping

2004

Abstract The vacuum-ultraviolet fundamental absorption edge (‘Urbach edge’) of four types of synthetic silica glasses, ‘wet’, ‘dry’, and doped by 570 and 6010 ppm wt. fluorine, was studied in the absorption coefficient range (1 cm−1–500 cm−1) at room temperature. The absorption edge has exponential form in agreement with the Urbach’s rule. The well-documented increase of vacuum-ultraviolet transparency upon fluorine doping is due to a steeper absorption edge (shorter ‘Urbach tail’) as compared to undoped silicas. The increase of the edge slope in F-doped silica occurs already the lower dopant concentration (570 ppm), the slope does not increase further in the 6010 ppm doped glass. These fin…

Time‐resolved absorption and luminescence following electron‐hole pair creation in ZnO

2008

We report transient absorption induced by electron-hole excitation in undoped ZnO. A laser pump/continuum probe method covers 2–300 ps, and an electron pulse with lamp transmission covers 8–300 ns. The broad absorption spectrum increases monotonically with wavelength from 900 to 1600 nm. Following a reasonable hypothesis that the free-carrier-like induced infrared absorption is proportional to the total number of free carriers, excitons, and shallow-trapped carriers in the sample, these data allow setting an upper limit on the quantum efficiency of a specified lifetime component of luminescence. For the undoped commercial ZnO studied in this report, the quantum efficiency of room temperatur…

Dopant Clusterization and Oxygen Coordination in Ta-Doped Bismuth Oxide: A Structural and Computational Insight into the Mechanism of Anion Conduction

2015

Bi2O3 in its fluorite-like form can be obtained either at 730-824 °C, showing the highest oxide-ion conduction known so far, or by doping. We present a comprehensive appraisal of the local atomic structure of Ta-doped Bi2O3 investigating by X-ray absorption spectroscopy the aggregation motifs of Ta5+ and the interaction between dopants and oxygen vacancies. Using periodic density functional theory simulations, we show that the connection of Ta4O18 aggregates is energetically favorable. We find that the local coordination of Bi3+ and its electronic structure, as seen from the calculated density of states (DOS), are invariably determined by the Bi 6s2 lone pair in both doped and undoped Bi2O3…