Search results for "ELECTRICAL RESISTIVITY"

showing 10 items of 357 documents

High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide

1993

A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…

Electron mobilityInfrared SpectraAnnealing (metallurgy)Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementAnnealingchemistry.chemical_compound:FÍSICA [UNESCO]Hall effectImpurityElectrical resistivity and conductivityTin AdditionsSelenideDoped MaterialsIndium SelenidesHall EffectCondensed matter physicsTemperature DependenceDopingUNESCO::FÍSICAElectric ConductivityIndium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped MaterialsDeep Energy LevelschemistryIndiumImpuritiesJournal of Applied Physics
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Si Donor Incorporation in GaN Nanowires

2015

With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…

Electron mobilityMaterials scienceNanowireBioengineeringNanotechnology02 engineering and technology01 natural sciencesElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceSpectroscopyComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]business.industryMechanical EngineeringDopingGeneral ChemistryRadius021001 nanoscience & nanotechnologyCondensed Matter PhysicsOptoelectronicsField-effect transistor0210 nano-technologybusinessMolecular beam epitaxy
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Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

2008

Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling. Peer Reviewed

Electron mobilityMaterials scienceOrganic compounds.Analytical chemistryDipolar broadeningGeneral Physics and AstronomySpin coatingHole mobilityElectronic density of statesConductivityOxidacióCompostos orgànicsElectrical resistivity and conductivity:FÍSICA [UNESCO]Molecular clustersOrganic compoundsOxidationDopingElectrical conductivityOxidation.Molecular nanomagnetMolecular magnetic clusterMolecular magnetism Nanostructured materialsSpin coatingDopingUNESCO::FÍSICAElectric conductivity.Thin film transistorsNanostructured materialsConductivitat elèctricaNanomagnet:Enginyeria electrònica::Microelectrònica [Àrees temàtiques de la UPC]Doping ; Electrical conductivity ; Electronic density of states ; Hole mobility ; Molecular clusters ; Molecular magnetism Nanostructured materials ; Organic compounds ; Oxidation ; Spin coating ; Thin film transistorsDensity of statesNanostructured materials.Hole transport layerMaterials nanoestructuratsOrder of magnitude
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High-pressure electrical transport measurements on p-type GaSe and InSe

2006

We performed high-pressure Hall effect and resistivity measurements in p-type GaSe and InSe up to 12 GPa. The pressure behaviour of the transport parameters shows dramatic differences between both materials. In GaSe, the hole concentration and mobility increase moderately and continuously. In InSe, the hole mobility raises rapidly and the hole concentration increases abruptly near 0.8 GPa. The observed results are attributed to the different pressure evolution of the valence-band structure in each material. In InSe a carrier-type inversion is also detected near 4.5 GPa.

Electron mobilitystomatognathic systemElectrical transportCondensed matter physicsElectrical resistivity and conductivityChemistryHall effectHigh pressuremacromolecular substancesCondensed Matter PhysicsHigh Pressure Research
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Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

2019

An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…

Electronic properties and materialsMaterials scienceNANOTECNOLOGIANanowirelcsh:Medicine02 engineering and technologySubstrate (electronics)CRYO-FIB01 natural sciencesFocused ion beamArticle//purl.org/becyt/ford/1 [https]Electrical resistivity and conductivity0103 physical sciencesNano-Electronic devicesElectrical measurementsIrradiationlcsh:Science010302 applied physicsMultidisciplinaryNanowiresbusiness.industrylcsh:R//purl.org/becyt/ford/1.3 [https]021001 nanoscience & nanotechnologyddc:NANODEPOSITOSOptoelectronicslcsh:QFIBID0210 nano-technologybusinessLayer (electronics)Scientific Reports
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Comparison of different sets of array configurations for multichannel 2D ERT acquisition

2017

Abstract Traditional electrode arrays such Wenner-Schlumberger or dipole-dipole are still widely used thanks to their well-known properties but the array configurations are generally not optimized for multi-channel resistivity measures. Synthetic datasets relating to four different arrays, dipole-dipole (DD), pole-dipole (PD), Wenner-Schlumberger (WS) and a modified version of multiple gradient (MG), have been made for a systematic comparison between 2D resistivity models and their inverted images. Different sets of array configurations generated from simple combinations of geometric parameters (potential dipole lengths and dipole separation factors) were tested with synthetic and field dat…

Engineering010504 meteorology & atmospheric sciencesbusiness.industryField dataMultiple gradientResistivityArrayInversion (meteorology)010502 geochemistry & geophysics01 natural sciencesDipoleModel resolutionGeophysicsElectrical resistivity and conductivitySettore GEO/11 - Geofisica ApplicataElectronic engineeringMultichannelElectric potentialResolutionbusinessAlgorithm2D0105 earth and related environmental sciences
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Electric conduction in solids: a pedagogical approach supported by laboratory measurements and computer modelling environments

2008

In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi‐agent systems. ‘Virtual experiments’ are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.

EngineeringNetLogoElectrical resistivity and conductivitybusiness.industryMechanical engineeringElectric propertiesComputer modellingComputer aided instructionbusinessThermal conductioncomputerComputer modeling Semiconductor device modeling Electrical properties Electrical resistivity Semiconductorscomputer.programming_language
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Finite difference time domain simulation of earth electrodes soil ionisation under lightning surge condition

2008

The non linear effects of soil ionisation on the behaviour of earth electrodes are investigated by a finite difference time domain numerical scheme. A time variable soil resistivity is used in order to simulate the soil breakdown; step by step the resistivity value is controlled by the local instantaneous value of the electric field compared with the electrical strength, fixed for the soil. No a priori hypothesis about the geometrical shape of the ionised zone around the electrodes has to be enforced. Simulation results related to complex earth electrodes of limited extension are reported. The model has been validated by comparing the computed results with data available in technical litera…

Engineeringfinite difference time domain numerical methodbusiness.industryGroundSoil resistivityFinite-difference time-domain methodMechanicsAtomic and Molecular Physics and OpticsPhysics::GeophysicsNon-linear effectselectromagnetic transientsSettore ING-IND/31 - ElettrotecnicaElectrical resistivity and conductivityElectric fieldIonizationElectronic engineeringElectrical and Electronic Engineeringsoil ionizationbusinessVoltageIET Science, Measurement & Technology
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EXTREMELY LOW FREQUENCY (50Hz) MAGNETIC FIELD INFLUENCES PHYSICO-CHEMICAL PROPERTIES OF WATER

2019

The influence of 50 Hz sinusoidal magnetic field on physico-chemical properties of water was studied. Tanks with distilled water (120 mL) were individually exposed to action of homogenous 50 Hz magnetic fields, using a Helmholtz coils system. For magnetically exposure have been used different values of magnetic flux density (between 1 and 5 mT) and different durations of exposure (between 5 and 240 minutes). By means of this experimental study the physico-chemical properties of exposed water samples compared with the control ones have explored. Density, viscosity, surface tension, pH, oxygen concentration and electrical conductivity were recorded. Some physico-chemical parameters analyzed i…

Environmental EngineeringMaterials scienceAnalytical chemistryManagement Monitoring Policy and Lawequipment and suppliesPollutionMagnetic fieldSurface tensionAbsorbanceViscosityDistilled waterElectrical resistivity and conductivityLimiting oxygen concentrationhuman activitiesIntensity (heat transfer)Environmental Engineering and Management Journal
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Chalcogenide thin films for direct resistors fabrication and trimming

2004

Abstract The fabrication of thin film resistors based on Ge–Sb–Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.

FabricationMaterials scienceChalcogenideOrders of magnitude (temperature)business.industryMechanical EngineeringPhysics::OpticsConductivityCondensed Matter PhysicsLaser trimmingComputer Science::Otherlaw.inventionCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryMechanics of MaterialsElectrical resistivity and conductivitylawOptoelectronicsGeneral Materials ScienceThin filmResistorbusiness
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