Search results for "ELECTRONICS"

Light-emitting diodes based on phenylenevinylene oligomers with defined chain lengths

1997

Abstract We present characteristic electroluminescence data on single-layer devices based on three different oligo phenylenevinylene compounds with defined chain lengths. Light-emitting diodes (LEDs) were prepared by subsequent vacuum evaporation of the oligomer film and the A1 top electrode onto an indium—tin oxide (ITO) substrate. The LEDs show light emission in the spectral range of yellow to orange depending on the conjugation length of the compound used. We report photoluminescence and optical absorption data of the thin sublimed films, together with the wavelength dependence of the electroluminescence and with the current—voltage characteristics of the LED devices. The redox behavior …

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

2014

International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, an…

Dielectric Microspheres: Quantum Dots Luminescence Collection Enhancement and Nanoscopy by Dielectric Microspheres (Part. Part. Syst. Charact. 1/2020)

2020

Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitation

2003

4 páginas, 2 figuras.-- PACS: 78.67.Hc; 73.21.La; 78.55.Cr.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.

Optical properties of nitride nanostructures

2010

In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…

Visible Photoluminescence of Variable-Length Zinc Oxide Nanorods Embedded in Porous Anodic Alumina Template for Biosensor Applications

2021

Zinc oxide (ZnO) and porous anodic aluminum oxide (PAAO) are technologically important materials, rich with features that are of interest in optical applications, for example, in light-emitting and sensing devices. Here, we present synthesis method of aligned ZnO nanorods (NR) with 40 nm diameter and variable length in 150 to 500 nm range obtained by atomic layer deposition (ALD) of ZnO in pores of continuously variable thickness PAAO. The relative intensity of yellow (1.99 eV), green (2.35 eV), and blue (2.82 eV) photoluminescence (PL) components originating from the different types of defects, varied with non-monotonic dependency on the composite film thickness with a Fabry–Pérot like mod…

Acoustically driven photon antibunching in nanowires.

2011

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …

Recombination luminescence of oxygen-deficient centers in silica

2008

Abstract The luminescence of silica glass, prepared by plasma chemical vapor deposition (PCVD) and quartz glass of type IV (trade mark KS-4V) methods, were studied while irradiated with pulses of ArF laser (193 nm) light in the range of sample temperatures between 10 and 300 K. The samples contain less than 0.1 ppm metallic and hydroxyl impurities. The samples synthesized by PCVD were of two kinds. The first one (amorphous) was as-deposited from plasma at a substrate tube temperature of ∼1200 °C. The second one (fused) was prepared from the first by the tube collapsing with an external burner. In this process, a section of the substrate tube with the deposited glass was installed in a lathe…

Luminescence study of defects in synthetic as-grown and HPHT diamonds compared to natural diamonds

2005

The optically active defects in as-grown, high-pressure high-temperature-treated (HPHT), boron-doped, and synthetic diamonds (SD) grown with a nitrogen-getter, as well as of natural diamonds (ND), were characterized by absorption and luminescence spectroscopies using different excitation sources. The laser-excited photoluminescence (PL) spectra of SDs show numerous sharp lines characteristic for nickel-related centers, whereas NDs yield mainly broad PL bands. The emission from the nickel-related defects in NIR range increases and the maxima of the bands shift to lower energies with increasing temperature. Under UV and electron beam excitation, the yellow synthetic diamonds display green lum…

Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

2014

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the tempe…