Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Polarization Insensitive Wavelength Conversion in a Low-Birefringence SiGe Waveguide
2016
We report the first demonstration of a single-pass dual-orthogonal-pump four-wave mixing-based wavelength conversion scheme in a silicon-based waveguide. The silicon germanium waveguide used was designed to exhibit strong TE/TM mode similarity across a broad wavelength range as well as a large nonlinear coefficient. A polarization-dependent loss of just 0.42 dB was measured, and the conversion of 40-Gb/s differential phase-shift keying signals was demonstrated with 1.5-dB power penalty at a bit error ratio of $10^{-9}$ .
New Molecular-Based Materials for Enabling Electro-Optical Bistability in the Silicon Photonics Platform
2019
Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Spin Crossover (SCO) effect in the silicon platform for enabling optical bistability. The SCO phenomenon involves a switching process between two molecular spin states. This spin transition comes along with a change in the optical refractive index that can be switched by different external stimuli such as a variation of temperature or light irradiation and which has a hysteretic behaviour. The SCO material can be synthetized as nanoparticles so th…
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
2013
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid
2007
Abstract HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etching. The ca…
Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors
2014
The authors acknowledge Francesco Ruffino for the AFM measurements. This work was funded by the EU FP7 Marie Curie Action FP7-PEOPLE-2010-ITN through the PROPHET project (Grant No. 264687), the bilateral CNR/AVCR project "Photoresponse of nanostructures for advanced photovoltaic applications", the MIUR project Energetic (Grant no. PON02_00355_3391233) and by the Portuguese Science Foundation (FCT-MEC) through the Strategic Project PEst-C/CTM/LA0025/2013-14 and the research project PTDC/CTM-ENE/2514/2012. Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhance…
Optical tweezing using tunable optical lattices along a few-mode silicon waveguide
2018
International audience; Fourteen years ago, optical lattices and holographic tweezers were considered as a revolution, allowing for trapping andmanipulating multiple particles at the same time using laser light. Since then, near-field optical forces have arousedtremendous interest as they enable efficient trapping of a wide range of objects, from living cells to atoms, in integrateddevices. Yet, handling at will multiple objects using a guided light beam remains a challenging task for current on-chipoptical trapping techniques. We demonstrate here on-chip optical trapping of dielectric microbeads and bacteria usingone-dimensional optical lattices created by near-field mode beating along a f…
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
2015
Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
Gold coated porous silicon nanocomposite as a substrate for photoluminescence-based immunosensor suitable for the determination of Aflatoxin B1.
2017
Abstract A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Aflatoxin B1 (AFB1) has been developed. This immunosensor was based on porous silicon (PSi) covered by thin gold layer (Au) and modified by antibodies against AFB1 (anti-AFB1). PSi layer was formed on silicon substrate, then the surface of PSi was covered by 30 nm layer of gold (PSi/Au) using electrochemical and chemical deposition methods and in such ways PSi/Au (El.) and PSi/Au (Chem.) structures were formed, respectively. In order to find PSi/Au the most efficiently suitable for PL-based sensor design, structure several different PSi/Au (El.) and PSi/Au (Chem.) structures were…