Search results for "EPO"

Effect of space charge on the negative oxygen flux during reactive sputtering

2017

Negative ions often play a distinctive role in the phase formation during reactive sputter deposition. The path of these high energetic ions is often assumed to be straight. In this paper, it is shown that in the context of reactive magnetron sputtering space charge effects are decisive for the energetic negative ion trajectories. To investigate the effect of space charge spreading, reactive magnetron sputter experiments were performed in compound mode with target materials that are expected to have a high secondary ion emission yield (MgO and CeO2). By the combination of energy flux measurements, and simulations, a quantitative value for the negative oxygen ion yield can be derived.

High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

Coeval Cold Spray Additive Manufacturing Variances and Innovative Contributions

2017

Tremendous attention has been given to the cold spray process, even more today with the emergence of additive manufacturing, worldwide. Several inventions related to the cold spray technology have been patented for over a century and mostly since a couple of decades. But the cold spray technology knows a period of great innovations due to recent and current substantial explorations. Various technological solutions have been developed. The technical dimension, and particularly in terms of manufacturing method, has also always been a major genesis of progresses and novelties. This chapter is a technological survey of the cold spray additive manufacturing and reports variant methods and innova…

Space charge behavior of different insulating materials employed in AC and DC cable systems

2017

In this work, the space charge accumulation in three different XLPE based material has been carried out by using the PEA (Pulsed Electro-Acoustic) method. The specimens provided by a cables industry have been subjected to the same DC stress during polarization time at environment temperature. Afterwards, the high voltage generator has been turned off and the amount residual charge has been evaluated. The space charge profiles during polarization and depolarization have been carried out and compared. Finally, the distribution of electric field within the samples has been reported. In particular, the maximum distortion of electric field has been calculated by taking into account the distribut…

Topological insulator nanoribbon Josephson junctions: Evidence for size effects in transport properties

2020

We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical current density $J_c$ by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated to them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that the $J_c$ reduction as a function of the nanoribbons width can be accounted for by assuming that on…

Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition

2020

Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

2006

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…

Key factors towards a high-quality additive manufacturing process with ABS material

2019

Abstract Additive Manufacturing technologies have gained a lot of popularity during the past years. The current challenge being the transition of this manufacturing technology from prototype oriented towards mass production. In order to achieve this, fabrication times and mechanical parameters must be improved. This paper aims to identify which are the parameters that have the highest influence on parts obtained with fused deposition modeling (FDM) technology from ABS material. In addition, this study identifies which are the most accurate methods to test the mechanical properties of FDM parts while still respecting ASTM standard for testing the tensile properties of plastics. It was found …

The effect of curing conditions on the electrical properties of an epoxy resin

2016

The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges

2017

Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…