Search results for "EXCITON"
showing 10 items of 317 documents
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
2001
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
Excitonic Transitions in Homoepitaxial GaN
2001
The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.
The luminescence properties of ZnO nanopowders
2007
Pure and Al3+ doped ZnO nanopowders were studied by means of time-resolved luminescence spectroscopy. The powders were synthesized by hydrothermal and plasma methods. These powders were used as a raw material for vaporization-condensation process inside the Solar reactor. The commercially available ZnO nanopowder was studied for a comparison. Exciton to defect band luminescence intensity ratio was estimated in different types of ZnO nanopowders. It was found that nanopowders with whiskers morphology show superlinear luminescence intensity depending on excitation density. The observed effect depends on the average nanoparticle size and on the powder morphology.
F centre production in CsI and CsI–Tl crystals under Kr ion irradiation at 15 K
2000
Abstract We present results of simultaneous in situ luminescence and optical absorption studies in scintillator CsI and CsI–Tl crystals, exposed to very dense electronic excitations induced by 86Kr ions (8.63 MeV/amu). Irradiation at 15 K leads to the formation of the prominent F absorption band. In addition, several other features of the broad absorption between exciton and F bands were ascribed to an anion vacancy, α centre (240 nm), self-trapped hole, Vk centre (410 nm) and interstitials, H centres (560 nm). We have found that low doping of thallium (∼1017 cm−3) causes the F centre formation to proceed more rapidly than in pure crystal. On the other hand, we were not able to create any a…
Different regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wires
2006
8 páginas, 8 figuras.
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
2012
We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge
2010
We report photoluminescence measurements carried out on amorphous SiO{sub 2} upon excitation by synchrotron light. Exposure of the as-grown material to above-edge light at low temperature induces the formation of nonbridging oxygen hole centers (NBOHC), localized in a thin layer below the surface limited by the penetration depth (tens of nm) of impinging light. After concluding the exposure to 11 eV light, stable defects are revealed by observing their characteristic 1.9 eV photoemission band excited at 4. 8eV. The local concentration of induced defects, supposedly formed by nonradiative decay of excitons, is very high (close to approx10{sup 21} cm{sup -3}) and independent of the previous h…
Quasimolecular luminescence centers formed by photoinduced recombination of exciton-created defects in KI
1995
Abstract The photoinduced recombination of exciton-created lattice defects - the F,H center pairs was studied in KI crystal at low temperatures. Two different luminescence centers with quasimolecular structure can be distinguished. One of them is the self-trapped exciton, the other one could be the H-plus-electron (H+e) center.
Luminescence and ultraviolet excitation spectroscopy of SrI2 and SrI2:Eu2+
2013
Abstract We report measurements of luminescence and its ultraviolet excitation spectra in SrI2 and SrI2:Eu2+ at temperatures of 10 and 300 K. Attention is focused on determining the exciton energy and its temperature shift from features of the excitation spectra and limits placed by absorption spectroscopy on a 120 μm thin crystal, on observation of a broadened Eu emission band attributed to trace Eu associated with oxygen in nominally undoped crystals, and on adding observations concerning the 3.4 eV band at low temperature attributed by Pustovarov et al. to the self-trapped exciton.