Search results for "Electrochemical"
showing 10 items of 574 documents
Tuning of the Mg Alloy AZ31 Anodizing Process for Biodegradable Implants
2021
Coatings were grown on the AZ31 Mg alloy by a hard anodizing process in the hot glycerol phosphate-containing electrolyte. Anodizing conditions were optimized, maximizing corrosion resistance estimated by impedance measurements carried out in Hank's solution at 37 °C. A post anodizing annealing treatment (350 °C for 24 h) allowed us to further enhance the corrosion resistance of the coatings mainly containing magnesium phosphate according to energy-dispersive X-ray spectroscopy and Raman analyses. Gravimetric measurements revealed a hydrogen evolution rate within the limits acceptable for application of AZ31 in biomedical devices. In vitro tests demonstrated that the coatings are biocompati…
Physicochemical characterization and photoelectrochemical analysis of iron oxide films
2013
Iron oxide films with a nanoporous structure were grown by anodizing sputter-deposited Fe in a fluoride containing ethylene glycol solution and annealed under air exposure at different temperatures. X-ray diffraction and Raman spectroscopy allowed to identify the presence of hematite and/or magnetite after thermal treatment for films annealed at T ≥ 400 °C under air exposure. According to GDOES compositional depth profiles, the thermal treatment sensitively reduced the amount of fluoride species incorporated into the film during the anodizing process. A band gap value of ~2.0 eV was estimated for all the investigated layers, while a flat band potential dependent on both the growth condition…
Synthesis and Characterization of Nanostructured Cobalt Hexacyanoferrate
2010
Cobalt hexacyanoferrate (CoHCF) nanoparticles have been synthesized by mixing aqueous solutions of K3Fe(CN)6 and CoCl2 under vigorous stirring at different temperatures and following two different procedures, drop-by-drop or immediate mixing. The resulting CoHCF nanoparticles, with dimensions of several tens of nanometers, were characterized using TEM, SEM-EDX, IR, and XRD. Their electrochemical behavior was investigated in comparison with the CoHCF powder bulk compound. The CoHCF nanoparticles exhibit an electrochemically driven conversion to the bulk one that has been investigated by a chemometric approach in order to establish the best synthetic parameters. The rate and the degree of con…
Corrosion behaviour of a highly alloyed austenitic alloy UB6 in contaminated phosphoric acid
2013
The influence of temperature (20–80°C) on the electrochemical behaviour of passive films anodically formed on UB6 stainless steel in phosphoric acid solution (5.5 M H3PO4) has been examined by using potentiodynamic curves, electrochemical impedance spectroscopy, and Mott-Schottky analysis. UB6 stainless steel in contaminated phosphoric acid is characterised by high interfacial impedance, thereby, illustrating its high corrosion resistance. The obtained results show that the films behave as n-type and p-type semiconductors in the potential range above and below the flat band potential, respectively. This behaviour is assumed to be the consequence of the semiconducting properties of the iron …
One-step electrochemical synthesis and physico-chemical characterization of CdSe nanotubes
2013
Abstract Stoichiometric CdSe nanotubes (NTs) with a length of ∼700 nm have been successfully grown by one-step electrochemical technique into anodic alumina membranes. Cyclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd 2+ ions and SeO 2 . The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with d…
Effect of Aeration on the Microelectrochemical Characterization of Al[sub 2]Cu Intermetallic Phases
2009
Local probing of the galvanic coupling between micrometer-sized Al 2 Cu phases and the surrounding aluminum-based matrix of a specially heat-treated 2011 alloy is investigated using a microcapillary electrochemical cell. The aging of an isolated Al 2 Cu particle, i.e., selective dissolution of aluminum, is controlled by the aeration condition at the tip of the capillary due to the nature of the silicon membrane used as a gasket. The local electrochemical behavior of an isolated particle after aging confirms the mass transport control of the oxygen reduction on the galvanic coupling of the particle with the surrounding matrix.
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
2021
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films
2015
Abstract Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limits of validity of such theory have not yet been explored. The classic semi-analytical solution is obtained under the constraint of constant electronic density of states (DOS) distribution in the mobility gap. In order to take into account the presence of a DOS variable in energy, a semi-empirical corrective power law was introduced in this paper. It is shown that the equations derived for thick films maintain their validity also in the case of thin films, provided that the space charge region width remains lower than 70% of the whole film thickness. A new expression based on the use o…
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Ion-Selective Organic Electrochemical Transistors
2014
Ion-selective organic electrochemical transistors with sensitivity to potassium approaching 50 μA dec(-1) are demonstrated. The remarkable sensitivity arises from the use of high transconductance devices, where the conducting polymer is in direct contact with a reference gel electrolyte and integrated with an ion-selective membrane.