Search results for "Electronics"
showing 10 items of 4340 documents
Enhanced acoustic pressure sensors based on coherent perfect absorber-laser effect
2021
Lasing is a well-established field in optics with several applications. Yet, having lasing or huge amplification in other wave systems remains an elusive goal. Here, we utilize the concept of coherent perfect absorber-laser to realize an acoustic analog of laser with a proven amplification of more than 10 4 in terms of the scattered acoustic signal at a frequency of a few kHz. The obtained acoustic laser (or the coherent perfect absorber-laser) is shown to possess extremely high sensitivity and figure of merit with regard to ultra-small variations of the pressure (density and compressibility) and suggests its evident potential to build future acoustic pressure devices such as precise sensor…
Thermal cloaking of complex objects with the neutral inclusion and the coordinate transformation methods
2019
We explore the cloaking of a complex shape by either the neutral inclusion or the transformation thermodynamics (TT) methods. Thin cloaks are built and the heat cloaking efficiency is investigated for both the steady-state and the transient regimes. We show that the neutral inclusion cloak is more efficient in both regimes, though it has the drawback that the thermal conductivity of the cloaked shape must be known. In practice, the neutral inclusion method is more flexible and easier to implement than the coordinate transformation method, especially for complex shapes.We explore the cloaking of a complex shape by either the neutral inclusion or the transformation thermodynamics (TT) methods…
Real space observation of two-dimensional Bloch wave interferences in a negative index photonic crystal cavity
2008
We report here the direct observation of two-dimensional (2D) Bloch wave interferences in a negative index photonic crystal by using optical near-field microscopy techniques. The photonic crystal is formed by a defectless honeycomb lattice of air holes etched in III-V semiconductor slab. A scanning near-field optical microscope is used to visualize spatially, as well as spectrally, the light distribution inside the photonic crystal. The recorded near-field spectra and maps presented here unambiguously demonstrate the Bloch wave interferences within the photonic crystal. Then, the spectral and spatial evolution of these interferences allows us to recover experimentally the 2D band diagram of…
Hydrogen plasma induced photoelectron emission from low work function cesium covered metal surfaces
2017
Experimental results of hydrogen plasma induced photoelectron emission from cesium covered metal surfaces under ion source relevant conditions are reported. The transient photoelectron current during the Cs deposition process is measured from Mo, Al, Cu, Ta, Y, Ni, and stainless steel (SAE 304) surfaces. The photoelectron emission is 2–3.5 times higher at optimal Cs layer thickness in comparison to the clean substrate material. Emission from the thick layer of Cs is found to be 60%–80% lower than the emission from clean substrates. peerReviewed
Framework for complex quantum state generation and coherent control based on on-chip frequency combs
2018
Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.
Defect-induced blue luminescence of hexagonal boron nitride
2016
Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…
A graphene-based neutral particle detector
2019
A neutral particle detector is presented, in which the traditionally used target material, indium tin oxide (ITO), is replaced by graphene. The graphene-based detector enables collinear photodetachment measurements at a significantly shorter wavelength of light down to 230 nm compared to ITO-based detectors, which are limited at 335 nm. Moreover, the background signal from the photoelectric effect is drastically reduced when using graphene. The graphene based detector, reaching 1.7 eV further into the UV energy range, allows increased possibilities for photodetachment studies of negatively charged atoms, molecules, and clusters.A neutral particle detector is presented, in which the traditio…
Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)
2018
Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…