Search results for "Eni"
showing 10 items of 20521 documents
p −1-Linear Maps in Algebra and Geometry
2012
At least since Habousch’s proof of Kempf’s vanishing theorem, Frobenius splitting techniques have played a crucial role in geometric representation theory and algebraic geometry over a field of positive characteristic. In this article we survey some recent developments which grew out of the confluence of Frobenius splitting techniques and tight closure theory and which provide a framework for higher dimension geometry in positive characteristic. We focus on local properties, i.e. singularities, test ideals, and local cohomology on the one hand and global geometric applicatioms to vanishing theorems and lifting of sections on the other.
Plastic yielding of glass in high-pressure torsion apparatus
2018
International audience; Hardness measurements performed at room temperature have demonstrated that glass can flow under elevated pressure, whereas the effect of high pressure on glass rheology remains poorly quantified. Here, we applied a high-pressure torsion (HPT) apparatus to deform SCHOTT SF6 â glass and attempted to quantify the effect of pressure and temperature on the shear deformation of glass subjected to pressures from 0.3 GPa to 7 GPa and temperatures from 25 ℃ to 496 ℃. Results show that the plastic yield deformation was occurring during the HPT experiments on the SF6 glass at elevated temperature from 350 ℃ to 496 ℃. The yield stress of SF6 glass decreases with increasing tempe…
Structural characterization and electrochemical hydrogen storage properties of Ti2LxZrxNi (x [ 0, 0.1, 0.2) alloys prepared by mechanical alloying
2013
International audience; Nominal Ti2Ni was synthesized under argon atmosphere at room temperature using a planetary high-energy ball mill. The effect of milling time and Zr substitution for Ti on the microstructure was characterized by XRD, SEM and TEM, and the discharge capacities of Ti2xZrxNi (x 1/4 0, 0.1, 0.2) were examined by electrochemical measurements at galvanostatic conditions. XRD analysis shows that amorphous phase of Ti2Ni can be elaborated by 60 h of milling, whereas Zr substitution hinders amorphization process of the system. The products of ball milling nominal Ti2xZrxNi (x 1/4 0.1, 0.2) were austenitic (Ti, Zr)Ni and partly TiO, despite the fact that the operation was carrie…
Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions
2017
R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.
MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms
2016
The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…
Arsenic diffusion in relaxedSi1−xGex
2003
The intrinsic As diffusion properties have been determined in relaxed ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ epilayers. The properties were studied as a function of composition x for the full range of materials with $x=0,$ 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy ${E}_{a}$ was found to drop systematically from 3.8 eV $(x=0)$ to 2.4 eV $(x=1).$ Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range $0l~xl~0.35$ and that vacancy mechanism dominates diffusion in the composition range $0.35lxl~1.$
Fluence effect on ion-implanted As diffusion in relaxed SiGe
2005
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
X-ray diffraction Warren–Averbach mullite analysis in whiteware porcelains: influence of kaolin raw material
2018
ABSTRACTCompositional and microstructural analysis of mullites in porcelain whitewares obtained by the firing of two blends of identical triaxial composition using a kaolin B consisting of ‘higher-crystallinity’ kaolinite or a finer halloysitic kaolin M of lower crystal order was performed. No significant changes in the average Al2O3 contents (near the stoichiometric composition 3:2) of the mullites were observed. Fast and slow firing at the same temperature using B or M kaolin yielded different mullite contents. The Warren–Averbach method showed increase of the D110 mullite crystallite size and crystallite size distributions with small shifts to greater values with increasing firing temper…
SiC Power Switches Evaluation for Space Applications Requirements
2016
We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…
Band gap of corundumlike α−Ga2O3 determined by absorption and ellipsometry
2017
The electronic structure near the band gap of the corundumlike $\ensuremath{\alpha}$ phase of ${\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ has been investigated by means of optical absorption and spectroscopic ellipsometry measurements in the ultraviolet (UV) range (400--190 nm). The absorption coefficient in the UV region and the imaginary part of the dielectric function exhibit two prominent absorption thresholds with wide but well-defined structures at 5.6 and 6.3 eV which have been ascribed to allowed direct transitions from crystal-field split valence bands to the conduction band. Excitonic effects with large Gaussian broadening are taken into account through the Elliott-Toyozawa model, which y…