Search results for "Epitaxy"
showing 10 items of 287 documents
Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
2004
Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…
Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy
2008
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.
Multilayer (Al,Ga)N Structures for Solar-Blind Detection
2004
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…
Optical and Vibrational Properties of Self-assembled GaN Quantum Dots
2008
Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …
Structural characterization of relaxor ferroelectric PbMg 1/3 Nb 2/3 O 3 -PbTiO 3 thin film heterostructures deposited by pulsed laser ablation
2000
Highly oriented and epitaxial films of relaxor ferroelectric PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) with a composition (68/32) near the morphotropic phase boundary were deposited by pulsed laser ablation on La0.5Sr0.5CoO3 bottom electrodes, deposited on MgO (100) and LaAlO3 (100). The formation of crystalline phases, epitaxy, film–electrode–substrate orientation relationships and crystal perfection were studied by X-ray diffraction and scanning electron microscopy. The structural properties were found to depend on the deposition conditions and substrate. Correlation of both the dielectric and relaxor properties in the heterostructures and the structural properties of the PMN-PT films was observed.
Raman measurements on GaN thin films for PV - purposes
2012
Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…
Molybdenum thin-film growth on rutile titanium dioxide ()
2002
Molybdenum films were deposited at room temperature on rutile TiO2(1 1 0) surfaces having different stoichiometries, surface roughnesses and crystallinities. The film structures and compositions and the substrate–film interfaces were investigated by X-ray diffraction, high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Different substrate pretreatments resulted in markedly different film and interface structures. Under the growth conditions studied, no amorphous molybdenum oxide interlayers were formed upon deposition in contrast to previous studies. Preferred (1 1 0) textured Mo films grew on both air-annealed and oxygen-bombarded substrates. While sh…
Aluminum and Gallium Substitution in Yttrium and Lutetium Aluminum–Gallium Garnets: Investigation by Single-Crystal NMR and TSL Methods
2016
The work reports the results on 71Ga and 27Al NMR investigation of the gallium and aluminum ions distribution over tetrahedral and octahedral positions in the Y3Al5−x GaxO12:Ce single crystals and Lu3Al5−xGaxO12:Ce single-crystalline epitaxial films. The gallium content x varies between 0 and 5 in crystals and between 0.3 and 2 in films.. We find that in both the Y- and Lu-based solid solutions the larger gallium ions are preferably located at the tetrahedral position while the smaller aluminum ions prefer the octahedral position of the garnet host. Based on NMR data, the dependence of fractional occupation parameters of the tetrahedral site of Ga and Al ions on the Ga content is determined…
An epitaxial hexagonal tungsten bronze as precursor for WO3 nanorods on mica.
2008
International audience; Tungsten oxide nanorods are grown at atmospheric pressure and low temperature (360 1C), by sublimation of WO3 and condensation on mica substrates. The nanorods are characterized by atomic force microscopy, high-resolution electron microscopy, energy-dispersive X-ray spectroscopy and high energy electron diffraction. The experimental results evidence the formation of a hexagonal tungsten bronze at the nanorod–substrate interface. The epitaxial relationships of the nanorods on mica are determined and the role of epitaxial orientation of the interfacial bronze in the nanorod growth and morphology are discussed.
Variation of lattice constant and cluster formation in GaAsBi
2013
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out o…