Search results for "Epitaxy"

Low-pressure-MOCVD LaMnO3±δ very thin films on YSZ (100) optimized for studies of the triple phase boundary

2000

Abstract This paper deals with the preparation of LaMnO 3± δ (LM) layers by low pressure-metal organic chemical vapor deposition (LP-MOCVD) using La(tmhd) 3 and Mn(acac) 3 as organometallic precursors. By thermogravimetric analysis, these precursors were found to be suitable for LP-MOCVD in a well-defined range of total pressure and temperature of sublimation. The activation energies of the sublimation process were found to be independent of the pressure within the appropriate range (0.06–3 kPa) and their values were 177 and 100.5 kJ mol −1 for La(tmhd) 3 and Mn(acac) 3 , respectively. LM layers of various thickness ranging between a few and a few hundred nanometers with a controlled La/Mn …

Nanoscale X-Ray Imaging of Spin Dynamics in Yttrium Iron Garnet

2019

Time-resolved scanning transmission x-ray microscopy (TR-STXM) has been used for the direct imaging of spin wave dynamics in thin film yttrium iron garnet (YIG) with spatial resolution in the sub 100 nm range. Application of this x-ray transmission technique to single crystalline garnet films was achieved by extracting a lamella (13x5x0.185 $\mathrm{\mu m^3}$) of liquid phase epitaxy grown YIG thin film out of a gadolinium gallium garnet substrate. Spin waves in the sample were measured along the Damon-Eshbach and backward volume directions of propagation at gigahertz frequencies and with wavelengths in a range between 100~nm and 10~$\mathrm{\mu}$m. The results were compared to theoretical …

Micromechanical approach of the high temperature oxidation of zirconium: study of the Zr/ZrO2 interfacial epitaxy with Bollmann's method

1997

The method of Bollmann has been used to determine the role of epitaxy in the formation of the mechanical stress field near the metal/oxide interface during the high temperature oxidation of zirconium. The strains due to epitaxy combine with those due to both oxygen diffusion in metal and thermal expansion of the metal/oxide composite in a model based on a micromechanical formalism. The calculated values are compared to experimental results and the applicability of Bollmann's method to this problem is discussed.

An Interfacial Thermodynamic Model for the Oxidation Kinetics of a Metal: Epitaxial Stress Effects

2004

MOCVD deposition of YSZ on stainless steels

2003

Abstract Yttria stabilized zirconia was deposited on stainless steel using the metal–organic chemical vapor deposition (MOCVD) technique, from β-diketonate precursors. The variation of the evaporation temperatures of yttrium and zirconium precursor allowed to control the level of Y within the film. Over the temperature range 125–150 °C, the Y content increased from 2.5 to 17.6 at.%. X-ray diffraction (XRD) analyses evidenced tetragonal phase of zirconia when the Y content was below 8 at.%, and cubic phase for higher concentration. Sputtered neutral mass spectrometry (SNMS) profiles confirmed that the control and stability of Y precursor temperature were of major importance to guarantee the …

Hybrid multiple diffraction in semipolar wurtzite materials: (\bf 01\overline{1}2)-oriented ZnMgO/ZnO heterostructures as an illustration

2017

X-ray diffraction has been widely used to characterize the structural properties (strain and structural quality) of semiconductor heterostructures. This work employs hybrid multiple diffraction to analyzer-oriented Zn1−xMgxO layers grown by molecular beam epitaxy on ZnO substrates. In such a low-symmetry material system, additional features appear in symmetric reflection scans, which are described as arising from hybrid multiple diffraction. First, the Bragg conditions necessary for these high-order processes to occur are introduced and applied to explain all the observed satellite reflections, identify the planes that contribute and computea priorithe angles at which they are observed. Fur…

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

2021

Abstract The mechanisms of plasma-assisted molecular beam epitaxial growth of GaN on muscovite mica were investigated. Using a battery of techniques, including scanning and transmission electron microscopy, atomic force microscopy, cathodoluminescence, Raman spectroscopy and x-ray diffraction, it was possible to establish that, in spite of the lattice symmetry mismatch, GaN grows in epitaxial relationship with mica, with the [11–20] GaN direction parallel to [010] direction of mica. GaN layers could be easily detached from the substrate via the delamination of the upper layers of the mica itself, discarding the hypothesis of a van der Waals growth mode. Mixture of wurtzite (hexagonal) and z…

Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

2006

Cd1−xZnxTe (CZT) substrates were studied to investigate their bulk and surface properties. Imperfections in CZT substrates affect the quality of Hg1−xCdxTe (MCT) epilayers deposited on them and play a role in limiting the performance of infrared (IR) focal plane arrays. CZT wafers were studied to investigate their bulk and surface properties. Transmission and surface x-ray diffraction techniques, utilizing both a conventional closed-tube x-ray source as well as a synchrotron radiation source, and IR transmission micro-spectroscopy, were used for bulk and surface investigation. Synchrotron radiation offers the capability to combine good spatial resolution and shorter exposure times than conv…

Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524As MOVPE grown onto InP(001)

1997

Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524 As hetero-epitaxial layer MOVPE grown onto InP(001). (006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥ = 5.8755 ± 0.003 A, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obt…

Chemical modification of Topaz surfaces

1999

In chemisorption, one is typically faced with the problem that the two-dimensional structure of the organic layer does not match the structure of the inorganic substrate. This work describes the first steps toward an induced epitaxial correlation of organic compounds on an inorganic surface. The idea of this work was to use a single crystal with a two-dimensional surface structure, Topaz (001), that matches an alkyl chain lattice better than existing substrates. X-ray reflectivity and FTIR experiments prove the surface modification of the Topaz, which is probably an etherification of the reactive OH-groups on the Topaz (001) surface.