Search results for "Eric"
showing 10 items of 12353 documents
Calibration of an airborne HO<sub><i>x</i></sub> instrument using the All Pressure Altitude-b…
2020
Abstract. Laser-induced fluorescence (LIF) is a widely used technique for both laboratory-based and ambient atmospheric chemistry measurements. However, LIF instruments require calibrations in order to translate instrument response into concentrations of chemical species. Calibration of LIF instruments measuring OH and HO2 ( HOx ) typically involves the photolysis of water vapor by 184.9 nm light, thereby producing quantitative amounts of OH and HO2 . For ground-based HOx instruments, this method of calibration is done at one pressure (typically ambient pressure) at the instrument inlet. However, airborne HOx instruments can experience varying cell pressures, internal residence times, tempe…
Numerical Procedures and their Practical Application in PV Module Analyses. Part IV: Atmospheric Transparency Parameters - Application
2020
Abstract The presented article relates to aspects of PV module testing using natural sunlight in outdoor conditions. It is a continuation of the article Part III: parameters of atmospheric transparency - determining and correlations. This article discusses the practical application of the indexes: atmosphere purity - k Tm , diffused component content - k s/o , beam clear sky index - K b - in testing various modules in outdoor conditions. Their influence on the conversion of modules made from various absorbers and various technologies is demonstrated. Their practical application in module testing in outdoor conditions is described and it - has been demonstrated that the results of the analys…
A Magnetohydrodynamic Auxiliary Propulsion system for docking assistance of autonomous vehicle
2016
In this article we present an approach to the description of Magnetohydrodynamic Auxiliary Propulsion system for docking assistance of autonomous vehicle. Preliminarily, an analytical model which includes an electromagnetic model and a thermal model is presented. Successively, in order to move beyond the analytical model, a 3-D MHD modeling tool and a Runge Kutta method based solver are presented and they are used to investigate an alternative MHD solutions. Some numerical analysis are given
Strategies for numerical simulation of linear friction welding of metals: a review
2017
Linear friction welding (LFW) is a solid-state joining process used to weld non-axisymmetric components. Material joining is obtained through the reciprocating motion of two specimens undergoing an axial force. During this process, the heat source is determined by the frictional work transformed into heat. This results in a local softening of the material and plays a key role in the onset of the bonding conditions. In this paper, a critical analysis of the different approaches used to simulate the LFW processes is provided. The focus of the paper is the comparison of different modeling strategies and the most relevant outputs available, i.e. temperature, strain and stress distribution, mate…
Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapo…
2019
Abstract We have analysed the growth, morphological and structural characterization of Cd1-xZnxO thin films grown on r-sapphire substrates by atmospheric pressure metal organic chemical vapour deposition, mainly focusing on the Cd-rich rock-salt phase for its promising optical and technological applications. The evolution of the surface morphology and crystalline properties as a function of Zn content has been studied by means of high resolution x-ray diffraction and electron microscopy techniques. Monocrystalline (002) single-phase cubic films were obtained with Zn contents up to 10.4%, and with a low density of dislocations as a consequence of the optimized crystal growth process. Particu…
MOCVD growth of CdO very thin films: Problems and ways of solution
2016
Abstract In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously re…
Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
2020
This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundarie…
Isothermal relaxation of discommensurations in K2ZnCl4
1994
At the incommensurate-ferroelectric transition temperature T c of K 2 ZnCl 4 , the dielectric susceptibility contains an anomalous contribution both above and below T c . Previous quasi-static dielectric measurements and hysteresis loops demonstrated that this anomalous part arises from the peculiar dynamics of discommensurations. We have used isothermal dielectric measurements to get some insight into the long time dynamics of these discommensurations. We have found that the characteristic relaxation times τ are of the order of 10 4 s in the incommensurate and in the ferroelectric phase. Even more unusual is a non-monotonous relaxation which is observed in a restricted temperature range ab…
High temperature oxidation of Mg2(Si-Sn)
2016
Abstract High temperature oxidation of Mg 2 Si 1- x Sn x alloys ( x = 0.1 ⿿ 0.6) has been investigated. The oxidation rate was slow for temperatures below 430 °C. In the temperature range between 430⿿500 °C all the alloys exhibited breakaway oxidation. The onset temperature of the breakaway region in general decreased with increasing level of Sn in the alloy. The breakaway behavior is explained by a combination of the formation of a non-protective MgO layer and the formation of Sn-rich liquid at the interface between the oxide and Mg depleted Mg 2 Sn.
Melting temperature prediction by thermoelastic instability: An ab initio modelling, for periclase (MgO)
2021
Abstract Melting temperature (TM) is a crucial physical property of solids and plays an important role for the characterization of materials, allowing us to understand their behavior at non-ambient conditions. The present investigation aims i) to provide a physically sound basis to the estimation of TM through a “critical temperature” (TC), which signals the onset of thermodynamic instability due to a change of the isothermal bulk modulus from positive to negative at a given PC-VC-TC point, such that (∂P/∂V)VC,TC = -(∂2F/∂V2) VC,TC = 0; ii) to discuss the case of periclase (MgO), for which accurate melting temperature observations as a function of pressure are available. Using first princip…