Search results for "FABRICATION"
showing 10 items of 460 documents
Fabrication and characterization of ZnO/Zn2TiO4/ZnAl2O4 composite films by using magnetron sputtering with ceramic targets
2022
Abstract Transparent conducting oxides (TCO), including ZnO/Zn2TiO4/ZnAl2O4 composite films, are of considerable importance in optoelectronic applications. We fabricated composite film assisted with DC magnetron sputtering using ceramic target material (ZnO, TiO2, and Al2O3 powders mixture). The influence of processing gases composition (0–50% O2–Ar) on film characteristics, including structural, optical, and electronic properties, is assessed. All films contain hexagonal wurtzite ZnO structure and ZnAl2O4, Zn2TiO4 spinel phases, with (002), (100), and (101) as dominant orientation by increasing oxygen contents. The transmittance of deposited films is above 81% (except for 50% oxygen), and …
Photoelectrochemical characterization of Cu2O-nanowire arrays electrodeposited into anodic alumina membranes
2007
Perfectly aligned nanowire arrays of polycrystalline Cu2O were grown by template-pulsed electrodeposition from a cupric acetate-sodium acetate bath into anodic alumina membranes (AAM). The photoelectrochemical behavior of arrays with different nanowire lengths (0.5 mu m and 2 mu m) was investigated in neutral solution, and the results compared to those pertaining to Cu2O films grown with the same procedure. Although all samples displayed the same indirect bandgap (similar to 1.9 eV), differences were observed both in photocurrent intensity and sign. The latter changed with potential and wavelength in different ways for nanowires and films, revealing a different defect concentration in the t…
Large area perovskite light-emitting diodes by gas-assisted crystallization:
2019
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…
Making Graphene Luminescent by Direct Laser Writing
2020
Graphene is not intrinsically luminescent, due to a lack of bandgap, and methods for its creation are tricky for device fabrication. In this study, we create luminescent graphene patterns by a simple direct laser writing method. We analyze the graphene using Raman spectroscopy and find that the laser writing leads to generation of line defects after initial formation of point defects. This Raman data enables us to create a model that explains the luminescence by a formation of small domains due to confinement of graphene by line defects, which is conceptually similar to the mechanism of luminescence in graphene quantum dots. peerReviewed
Periodic nanoscale patterning of polyelectrolytes over square centimeter areas using block copolymer templates
2016
© The Royal Society of Chemistry 2016. Nano-patterned materials are beneficial for applications such as solar cells, opto-electronics, and sensing owing to their periodic structure and high interfacial area. Here, we present a non-lithographic approach for assembling polyelectrolytes into periodic nanoscale patterns over cm2-scale areas. Chemically modified block copolymer thin films featuring alternating charged and neutral domains are used as patterned substrates for electrostatic self-assembly. In-depth characterization of the deposition process using spectroscopy and microscopy techniques, including the state-of-the-art scanning transmission X-ray microscopy (STXM), reveals both the sel…
Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions
1999
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.
Normal Metal-Insulator-Superconductor Tunnel Junctions With Pulsed Laser Deposited Titanium Nitride as Superconductor
2021
Here we report the fabrication of normal metal – insulator – superconductor (NIS) tunnel junctions using superconducting titanium nitride grown by pulsed laser deposition (PLD). The films for NIS junction fabrication were deposited on two different substrates: silicon nitride film and magnesium oxide. TiN films were characterized by means of electrical transport measurements, and films with superconducting transition temperatures above the liquid helium boiling point were chosen for fabrication of NIS junctions. Tunnel junction devices were successfully fabricated using electron beam lithography and shadow evaporation techniques. The insulator layer formation was performed using two differe…
Vacuum deposited perovskite solar cells employing dopant-free triazatruxene as the hole transport material
2017
Abstract Planar perovskite solar cells using organic charge selective contacts were fabricated. In a vacuum deposited perovskite-based solar cell, dopant and additive free triazatruxene as the hole transport layer was introduced for device fabrication. High open-circuit voltage of 1090 mV was obtained using methylammonium lead iodide (Eg=1.55 eV) as light harvesting material, thus representing a loss of only 460 mV which is in close vicinity of mature silicon technology (400 mV). The devices showed a very competitive photovoltaic performance, monochromatic incident photon-to-electron conversion efficiency of 80% and the power conversion efficiencies in excess of 15% were measured with a neg…
Electrochemical Fabrication and Physicochemical Characterization of Metal/High-k Insulating Oxide/Polymer/Electrolyte Junctions
2014
Photoelectrochemical polymerization of poly(3,4-ethylenedioxythiophene), PEDOT, was successfully realized on anodic film grown to 50 V on magnetron sputtered Ti-6 atom % Si alloys. Scanning electron microscopy allowed us to evidence formation of compact and uniform polymer layers on the oxide surface. Photoelectrochemical and impedance measurements showed that photopolymerization allows one to grow PEDOT in its conducting state, while a strong cathodic polarization is necessary to bring the polymer in its p-type semiconducting state. Information on the optical and electrical properties of metal/oxide/polymer/electrolyte junctions proves that PEDOT has promising performance as an electrolyte…
Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
2021
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable f…