Search results for "Ferro"

showing 10 items of 2451 documents

Alloying experiments on heavy fermion compounds

1990

Abstract This paper is intended to demonstrate the usefulness of controlled alloying for the understanding of heavy-fermion physics: (1) Th-substitution for Ce in CeCu2Si2 emphasizes the dominating role of the dopant-induced strain fields in generating incoherent scattering and pair breaking, (2) replacement of Cu by Ni in Ce(Cu1-xNix)2Ge2 leads to phenomena which are interpreted as derived from a transition between local-moment and itinerant heavy-fermion magnetism, and (3) increasing Cu concentration in UCu4+xAl8-x is accompanied by an antiferromagnetic to nonmagnetic transition near xcr = 1.5 similar to what has been found before for several Ce-based systems. A heavy Fermi-liquid phase w…

Materials scienceCondensed matter physicsMagnetismHeavy fermionIncoherent scatterQuasiparticleAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCoherence (physics)
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Temperature Dependence of Electronic and Magnetic Properties of (DOEO)<sub>4</sub>[HgBr<sub>4</sub>]·TCE Single Crystals

2015

The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)4[HgBr4]·TCE was investigated using magnetometry. The magnetic susceptibility shows a maximum at 40 K followed by an onset of a pronounced increase at 70 K and a constant behavior above 120 K. Implications on the charge carrier density are discussed. Combining the magnetometry with resistivity and ESR measurements we propose a sequence of insulating, metallic and semiconducting behavior with increasing temperature. Our results indicate that (DOEO)4[HgBr4]·TCE is close to the boundary between an insulating and conducting ground state.

Materials scienceCondensed matter physicsMagnetometerCondensed Matter PhysicsMagnetic susceptibilityAtomic and Molecular Physics and Opticslaw.inventionMetalSQUIDElectrical resistivity and conductivitylawvisual_artvisual_art.visual_art_mediumAntiferromagnetismGeneral Materials ScienceGround statePhase diagramSolid State Phenomena
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Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance

2021

$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…

Materials scienceCondensed matter physicsMagnetoresistance02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesMagnetic fieldPulsed laser depositionCondensed Matter::Materials Science0103 physical sciencesAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsOrthorhombic crystal systemThin film010306 general physics0210 nano-technologySpin (physics)Physical Review B
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Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction

2014

We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's mag…

Materials scienceCondensed matter physicsMagnetoresistanceCondensed Matter - Mesoscale and Nanoscale PhysicsFOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsCoupling (probability)Condensed Matter::Mesoscopic Systems and Quantum Hall Effect01 natural sciencesElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceFerromagnetismTunnel junctionCondensed Matter::Superconductivity0103 physical sciencesThermoelectric effectMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physics0210 nano-technologyAnisotropyOrder of magnitudeQuantum tunnelling
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Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects

2004

Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.

Materials scienceCondensed matter physicsMaterials ChemistryCeramics and CompositesMineralogyAntiferroelectricityIrradiationDielectricThin filmFluenceFerroelectricityTitanateZirconateJournal of the European Ceramic Society
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Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six

2010

The family of half-metallic ferromagnets Co2TiZ exhibits exceptional transport properties. The investigated compounds Co2TiAl(1−x)Six (x = 0.25, 0.5, 0.75) show Curie temperatures (TCs) that vary between 250 and 350 K, depending on the composition. Above TC the Seebeck coefficient remains constant. This makes them promising candidates for thermoelectric devices such as thermocouples with a tunable working range. The electrical resistivity data show an anomaly at TC which is attributed to changes in the electronic structure and therefore in the carrier concentration.

Materials scienceCondensed matter physicsMechanical EngineeringMetals and AlloysElectronic structureengineering.materialCondensed Matter PhysicsThermoelectric materialsHeusler compoundFerromagnetismMechanics of MaterialsThermocoupleElectrical resistivity and conductivitySeebeck coefficientThermoelectric effectengineeringGeneral Materials ScienceScripta Materialia
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Features of Phase Diagrams of Binary Pb(B<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-PbTiO<sub>3</sub&g…

2001

Materials scienceCondensed matter physicsMechanics of MaterialsMechanical EngineeringPhase (matter)Ferroelectric ceramicsBinary numberGeneral Materials ScienceCoercivityPhase diagramKey Engineering Materials
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Nonresonant hole burning spectroscopy of the relaxor ferroelectric PLZT

2002

Abstract The polydispersive dielectric response of a lanthanum-modified lead zirconate titanate relaxor ferroelectric was studied using nonresonant hole burning (NHB) spectroscopy. The dynamic heterogeneity of this material was evidenced by the fact that it was possible to burn frequency-dependent spectral holes. The maximum position of the spectral holes depended on the square root of the pump frequency Ω . The refilling of the spectral holes was monitored subsequent to excitation using various pump frequencies. The refilling data could be collapsed onto a master curve by re-scaling them, again, using Ω −0.5 as scaling factor. The refilling time was found to be much longer than the time sc…

Materials scienceCondensed matter physicsMineralogyGeneral ChemistryDielectricCondensed Matter PhysicsLead zirconate titanateFerroelectricityTitanateCondensed Matter::Materials Sciencechemistry.chemical_compoundDomain wall (magnetism)chemistryMaster equationMaterials ChemistrySpectroscopyExcitationSolid State Communications
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Antiferromagnetic order and frustration in small clusters

1997

Materials scienceCondensed matter physicsOrder (business)media_common.quotation_subjectAntiferromagnetismFrustrationmedia_commonPhysical Review B
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Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt …

2020

Materials scienceCondensed matter physicsPerpendicular magnetic anisotropyLogical conjunctionHeterojunctionFerroelectricityElectronic Optical and Magnetic MaterialsSpin-½Advanced Electronic Materials
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