Search results for "Field effect"
showing 10 items of 44 documents
ELECTROCHEMICAL FABRICATION OF METAL/OXIDE/CONDUCTING POLYMER JUNCTIONS FOR ELECTRONIC DEVICES
2014
Quantum Mechanical Co-Adsorption Modelling of Real Electrically Controlled Semiconductor Gas Sensors
2009
Abstract Co-adsorption of several gases is still a challenge due to the variety of reaction paths at the sensitive surface, and their competition for the adsorption sites. With an extended Wolkenstein model and the gas kinetic theory, we find that for specific paths their sequence of exposition has an important influence on the layer resistance as well as on the time required to achieve equilibrium. Whilst only processes that involve charge transfer can be electrically detected, a good correlation between model and electrical measurements needs weakly chemisorbed (physisorbed) layers to be taken in account. Our study presents a SnO2 nano-film sensor with electrical control electrodes expose…
Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration
2016
Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different …
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…
B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible
2009
The integration of metal oxide gas sensing layers into CMOS electronic still a challenge especially due to the high operating temperatures that do not comply with silicon transistor limits , even more critical, and metal oxide annealing temperatures. External electric fields will allow control over the energy levels of the sensing layer and thus over adsorption sensitivity, consequently the interaction between gas and sensitive layer is modulated. As the absorbed gas on the surface produces a band bending, it changes conduction paths allowing gas detection through resistance measurements. With this configuration, field switch offers fast desorption and thus handling of low temperature respo…
Field effect in the viscosity of magnetic colloids studied by multi-particle collision dynamics
2019
Abstract Colloidal solutions of magnetic nanoparticles are usually employed when the fluidity and magnetic properties are required at the same time, either in technical or biomedical applications. However, when the magnetic size of the nanoparticles is large enough (>12–15 nm) the colloid may form an equilibrium structure with or without the external magnetic field, which can significantly influence its rheology. Using multi-particle collision dynamics we study the internal structure and viscosity of the magnetic colloids at varying magnitudes of the externally applied field. We show a generalized structural behavior across all studied regimes and an appreciable increase of flow resistance …
Modeling the properties of lanthanoid single-ion magnets using an effective point-charge approach
2012
Herein, we present two geometrical models based on an effective point-charge approach to provide a full description of the lowest sublevels in lanthanoid single ion magnets (SIMs). The first one, named as the Radial Effective Charge (REC) model, evaluates the crystal field effect of spherical ligands, e.g. F(-), Cl(-) or Br(-), by placing the effective charge along the Ln-ligand axes. In this case the REC parameters are obtained fitting high-resolution spectroscopic data for lanthanoid halides. The second model, named as the Lone Pair Effective Charge (LPEC) model, has been developed in order to provide a realistic description of systems in which the lone pairs are not pointing directly tow…
Photocurrent generation in Graphene Field Effect Transistors (GFETs)
2016
In this work, we focused on the study of Graphene Field Effect Transistors (GFETs) photoelectrical response due to the combination of photovoltaic and photo-thermoelectric effects. The technological steps for the transistors fabrication together with their electro-optic response will be presented. Measurements were performed by using a 405 nm laser diode with AM modulation at 1.33 KHz shined onto the sample under test. GFETs electrical output signals were measured by using a lock-in amplifier synchronized to the same reference frequency of the laser driver. This gave us the possibility to evaluate the optical characteristics as a function of both the incident laser power and the static pola…
Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors
2008
Gas sensors with small dimensions offer the advantage of electrical sensitivity modulation. However, their actual use is hindered by drift effects that exceed those of usual metal-oxide sensors. We analyzed possible causes and found the best agreement of experimental data with the model of internal dopant fluctuations. The dopants are oxygen vacancies exhibiting high drift-diffusion coefficients under the impact of electrical fields. Thus, the width parameters of space charge regions, which again control the sensor current, are undergoing slow changes. Moreover, the dopant distributions cause internal electrical fields that yield drift even after voltage switch-off. This behavior has been p…
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
2018
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.