Search results for "Flash memory"

showing 5 items of 15 documents

Ionizing radiation effects on Non Volatile Read Only Memory cells

2012

Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.

Nuclear and High Energy PhysicsPhotonMaterials sciencebusiness.industrynitride read-only memories (NROM)Nitrideradiation hardnessFlash memoriesFlash memoryIonizing radiationThreshold voltageIonoxide/nitride/oxide (ONO)Terms—Flash memories nitride read-only memories (NROM) oxide/nitride/oxide (ONO) radiation hardness.Nuclear Energy and EngineeringOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardening
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Neutron-induced soft errors in advanced Flash memories

2008

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

PhysicsAstrophysics::High Energy Astrophysical PhenomenaHardware_PERFORMANCEANDRELIABILITYFlash memorySEESettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Computational physicsSettore FIS/03 - Fisica della MateriaReduction (complexity)Flash (photography)CMOSLimit (music)Electronic engineeringNeutronSensitivity (control systems)Error detection and correctionneutron irradiationSEE neutron irradiation
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Traces of errors due to single ion in floating gate memories

2008

Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.

PhysicsNon-volatile memoryOpticsbusiness.industryGate arrayTrack (disk drive)Logic gateElectrical engineeringbusinessFlash memoryDegradation (telecommunications)IonThreshold voltage2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial
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Direct evidence of secondary recoiled nuclei from high energy protons

2008

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.

PhysicsNuclear reactionNuclear and High Energy Physicsbusiness.industryDirect evidencePhysics::Instrumentation and DetectorsMonte Carlo methodNAND gatechemistry.chemical_elementHigh energy protonsSingle event effectsTungstenFlash memorySpace radiationNuclear physicsRecoilNuclear Energy and EngineeringchemistryFloating gate memoriesMicroelectronicsElectrical and Electronic EngineeringAtomic physicsbusinessNuclear Experiment
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Performance evaluation of non volatile memories with a low cost and portable automatic test equipment

2017

This paper presents a versatile and portable test equipment, called portable ATE for research and development of non-volatile memories functionalities. The system is based on STM32-NUCLEO assembled with a custom designed daughter board, in order to host non-volatile memories test-chips, to manage the needed power supplies and generate suitable signals stimuli for correct operations. The system is controlled and programmed by a personal computer, via USB interface. In particular the system can perform: memory reading, writing and erasing, with settings flexibility on time and voltage levels; Electrical Stress Tests (Drain, Gate and Bulk Stress); Cycling Tests; debugging algorithms (erase or …

Portable ATEbusiness.industryComputer sciencemedia_common.quotation_subjectReading (computer)Interface (computing)CharacterizationTestingUSBATEFlash memorylaw.inventionMicrocontrollerAutomatic test equipmentDebugginglawEmbedded systemPersonal computerbusinessHost (network)Computer hardwaremedia_commonUSB
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