Search results for "GALLIUM NITRIDE"
showing 8 items of 38 documents
Luminescent properties of GaN films grown on porous silicon substrate
2010
Abstract GaN films have been grown on porous silicon at high temperatures (800–1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spectra recorded at 5 K exhibit excitonic emissions around 3.36–3.501 eV and a broad yellow luminescence at 2.2 eV. CL analysis at different electron excitation conditions shows spatial non-uniformity in-depth of the yellow and the band-edge emissions. These bands of luminescence are broadened and red- or blue-shifted as the electron beam penetrates in the sample. These behaviors are explained by a change of the fundamental band gap due to re…
Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions
2019
This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
2011
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.
2009
By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
2022
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Impact of Gamma Radiation on Dynamic R
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) char…