Search results for "GENERATOR"
showing 10 items of 426 documents
Suppression of Λ(1520) resonance production in central Pb-Pb collisions at sNN=2.76 TeV
2019
The production yield of the Λ(1520) baryon resonance is measured at midrapidity in Pb-Pb collisions at sNN = 2.76 TeV with the ALICE detector at the Large Hadron Collider (LHC). The measurement is performed in the Λ(1520)→pK− (and charge conjugate) hadronic decay channel as a function of the transverse momentum (pT) and collision centrality. The ratio of the pT-integrated production of Λ(1520) baryons relative to Λ baryons in central collisions is suppressed by about a factor of 2 with respect to peripheral collisions. This is the first observation of the suppression of a baryonic resonance at the LHC and the first 3σ evidence of Λ(1520) suppression within a single collision system. The mea…
Probing nuclear PDFs with dijets in ultra-peripheral Pb+Pb collisions
2019
In this talk we apply the photoproduction framework recently implemented into the Pythia 8 Monte Carlo event generator to study the potential of photo-nuclear dijets in ultra-peripheral Pb+Pb collisions at the LHC to further constrain the nuclear PDFs. These events can be described as $\gamma$A collisions where the relevant part of the flux of quasi-real photons from heavy-ions is obtained by using the equivalent photon approximation and cutting out impact-parameter values which would lead to hadronic interactions between the beam particles. In particular, we quantify the small-$x$ reach with different jet kinematics and show how well the values of $x$ derived from reconstructed jet momenta…
Investigation of nuclear collectivity in the neutron mid-shell nucleusPb186
2007
For the first time, non-yrast structures of the neutron mid-shell nucleus $^{186}\mathrm{Pb}$ have been identified in an in-beam \ensuremath{\gamma}-ray spectroscopy measurement using the recoil-decay tagging technique. The yrast band has been tentatively extended up to ${I}^{\ensuremath{\pi}}=20{}^{+},$ revealing a similar backbend to that observed in the Pt and Hg isotones. Three new bands and several other transitions have been observed. Calculations carried out in the framework of the interacting boson model together with mean-field studies using the generator coordinate method provide arguments for the association of one of the new bands with an oblate shape. The present data also show…
Neutron generator for BNCT based on high current ECR ion source with gyrotron plasma heating
2015
BNCT development nowadays is constrained by a progress in neutron sources design. Creation of a cheap and compact intense neutron source would significantly simplify trial treatments avoiding use of expensive and complicated nuclear reactors and accelerators. D-D or D-T neutron generator is one of alternative types of such sources for. A so-called high current quasi-gasdynamic ECR ion source with plasma heating by millimeter wave gyrotron radiation is suggested to be used in a scheme of D-D neutron generator in the present work. Ion source of that type was developed in the Institute of Applied Physics of Russian Academy of Sciences (Nizhny Novgorod, Russia). It can produce deuteron ion beam…
Stochastic resonance in a tunnel diode in the presence of white or coloured noise
1995
We study the signal-to-noise ratio, signal and noise output levels in a fast bistable electronic system: a tunnel diode. We observe stochastic resonance when the system is driven by a sum of a small periodic signal and noise. The phenomenon is investigated for values of the driving frequency as high as 10 kHz. This is the highest frequency value used in SR experiments until now. In the presence of «white noise», we observe a nonmonotonic behavior characterized by a sharp dip in the output noise level measured at 100Hz and 1 kHz. A similar behavior is predicated by recent theories. We also present preliminary experimental results of SR in the presence of an Ornstein-Uhlenbeck noise. For the …
Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals
2008
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Computer-Aided Simultaneous Determination of Noise and Gain Parameters of Microwave Transistors
1979
A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.
Up to Date Version of a Computer-Driven Noise Figure Measuring System for the Simultaneous Determination of Noise, Gain and Scattering Parameters of …
1995
The complete characterization of microwave transistors in terms of (four) noise, (four) gain and scattering parameters sets ({N), {G) and [SI, respectively) vs. frequency and bias conditions (and also vs. decreasing temperature, if required) is the first and most important step to design low noise amplifiers (LNAs). The characterization of the device under test (DUT) in terms of [SI is friendly by means of commercial Automatic Network Analyzer; then the { G) set may be determined by computation.
On the noise resistance of field-effect transistors at microwave frequencies
2001
This paper presents a survey on the topical aspects of the noise resistance in field-effect transistors (FET) at microwave frequencies. Such noise parameter represents the sensitivity of the device noise figure to the departure from the minimum noise condition and is therefore important in all low-noise applications. The performance of the noise resistance in FETs has been reviewed since the first noise modeling analysis of short-gate devices were presented in the early '70s. The authors also comment and compare their own results on this subject as obtained by extensive experimental activity in the field of noisy device characterization vs. frequency, bias and temperature conditions.
Pion generalized dipole polarizabilities by virtual Compton scatteringπe→πeγ
2001
We present a calculation of the cross section and the event generator of the reaction $\ensuremath{\pi}e\ensuremath{\rightarrow}\ensuremath{\pi}e\ensuremath{\gamma}.$ This reaction is sensitive to the pion generalized dipole polarizabilities, namely, the longitudinal electric ${\ensuremath{\alpha}}_{L}{(q}^{2}),$ the transverse electric ${\ensuremath{\alpha}}_{T}{(q}^{2}),$ and the magnetic $\ensuremath{\beta}{(q}^{2})$ which, in the real-photon limit, reduce to the ordinary electric and magnetic polarizabilities $\overline{\ensuremath{\alpha}}$ and $\overline{\ensuremath{\beta}},$ respectively. The calculation of the cross section is done in the framework of chiral perturbation theory at $…