Search results for "Gallium"

showing 10 items of 265 documents

A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules

2019

Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…

Amorphous siliconI-V characteristic020209 energySeven-parameter equivalent modelTwo-diode model02 engineering and technologyTopologySolar irradianceMonocrystalline siliconchemistry.chemical_compoundSolar energy0202 electrical engineering electronic engineering information engineering0601 history and archaeologyDiodeMathematicsPhotocurrent060102 archaeologyRenewable Energy Sustainability and the Environmentbusiness.industryPhotovoltaic systemPV panel06 humanities and the artsSolar energyCopper indium gallium selenide solar cellschemistrybusinessRenewable Energy
researchProduct

An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules

2020

Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…

Amorphous siliconMaterials scienceSettore ING-IND/11 - Fisica Tecnica Ambientale060102 archaeologyMaximum power principleRenewable Energy Sustainability and the Environment020209 energyPhotovoltaic systemMechanical engineering06 humanities and the arts02 engineering and technologySolar irradianceCopper indium gallium selenide solar cellsPower (physics)Monocrystalline siliconThin-film photovoltaic modules One-diode model Five-parameter model I-V characteristics Solar energychemistry.chemical_compoundchemistry0202 electrical engineering electronic engineering information engineering0601 history and archaeologyDiode
researchProduct

Low vacuum photo electron emitting thin films

2009

Impact ionisation is a standard procedure to ionise gaseous or vaporisable substances in organic mass spectrometry. In this work, a "softer" ionisation is introduced which seems to be an alternative ion source for reducing collision between substance molecules and the hot internal walls of the box. Through collision mainly found in impact ionisation sources, fragments are built especially from thermally sensitive substances falsifying the spectra. We present here photoelectron emitting materials for the soft ionisation using semiconducting compounds, galliumn nitride (GaN), and a representative of the borides, lanthanum hexaboride (LaB 6 ). They are evaluated by photoelectron spectroscopic …

Analytical chemistryGallium nitrideSurfaces and InterfacesElectronLanthanum hexaborideNitrideCondensed Matter PhysicsMass spectrometryIon sourceSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistryIonizationMaterials ChemistryElectrical and Electronic EngineeringThin filmphysica status solidi (a)
researchProduct

Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates

2004

GaAs (100) substrates have been heat-treated in a metal-organic chemical vapor deposition reactor under flows of NH 3 and an oxygen organo-metallic precursor at temperatures between 650°C and 750°C. Yellowish films formed at the surface of all the samples. Gallium, nitrogen and oxygen were detected by EDX analysis of the films. The oxygen content was estimated in the range of at 5-10 at% depending on the heat-treatment temperature. X-ray diffraction and HRTEM results indicate that the structure of the films corresponds to the hexagonal wurtzite phase of GaN with an expanded unit cell. Raman spectra show hands corresponding to the Raman active GaN modes as well as disorder-activated broad ba…

Analytical chemistrychemistry.chemical_elementChemical vapor depositionCondensed Matter PhysicsOxygenInorganic Chemistrysymbols.namesakeCrystallographychemistryMaterials ChemistrysymbolsMetalorganic vapour phase epitaxyThin filmGalliumHigh-resolution transmission electron microscopyRaman spectroscopyWurtzite crystal structureJournal of Crystal Growth
researchProduct

Argon bubble flow in liquid gallium in external magnetic field

2020

ArgonMaterials sciencechemistryMechanics of MaterialsMechanical EngineeringBubble flowchemistry.chemical_elementElectrical and Electronic EngineeringLiquid galliumAtomic physicsCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsMagnetic fieldInternational Journal of Applied Electromagnetics and Mechanics
researchProduct

A theoretical investigation on the Cd doping of Cu-depleted CuInSe<inf>2</inf> materials

2011

Because of their outstanding characteristics and affordable price, polycrystalline thin film solar cells based on CuIn 1−x Ga x Se 2 (CIGS) absorber layer have emerged to be one of the most promising materials for photovoltaic applications [1–2]. To further enhance the efficiency of these solar cells much effort is spent on the in-depth investigation of the production methods. However, the effect of structural defects and dopants upon the macroscopic properties and morphology of epitaxially grown CIGS films is not yet fully understood [3]. More importantly, it is well established that the best cells can be prepared by growing the CIGS absorber layer under Cu-poor conditions [4]. Thus, it is…

Atomic layer depositionMaterials scienceDopantChemical physicsVacancy defectDopingNanotechnologyAtomic ratioDensity functional theoryMicrostructureCopper indium gallium selenide solar cells2011 37th IEEE Photovoltaic Specialists Conference
researchProduct

PSA and PSA Kinetics Thresholds for the Presence of 68Ga-PSMA-11 PET/CT-Detectable Lesions in Patients with Biochemical Recurrent Prostate Cancer

2020

68Ga-PSMA-11 positron-emission tomography/computed tomography (PET/CT) is commonly used for restaging recurrent prostate cancer (PC) in European clinical practice. The goal of this study is to determine the optimum time for performing these PET/CT scans in a large cohort of patients by identifying the prostate-specific-antigen (PSA) and PSA kinetics thresholds for detecting and localizing recurrent PC. This retrospective analysis includes 581 patients with biochemical recurrence (BC) by definition. The performance of 68Ga-PSMA-11 PET/CT in relation to the PSA value at the scan time as well as PSA kinetics was assessed by the receiver-operating-characteristic-curve (ROC) generated by plottin…

Biochemical recurrenceCancer Researchmedicine.medical_treatment68Gallium-PSMA PET/CTurologic and male genital diseaseslcsh:RC254-282030218 nuclear medicine & medical imaging03 medical and health sciencesProstate cancer0302 clinical medicine<sup>68</sup>gallium-psma pet/ctprostate-specific-antigenPSA kinetics thresholdsbiochemical recurrenceMedicineoptimal cutoff levelPET-CTPsa kineticsbusiness.industryProstatectomylcsh:Neoplasms. Tumors. Oncology. Including cancer and carcinogensprostate cancermedicine.diseaseRadiation therapyProstate-specific antigenOncology030220 oncology & carcinogenesisRecurrent prostate cancerbusinessNuclear medicineCancers
researchProduct

Diagnostic Performance of 68Ga-PSMA-11 Positron-emission-tomography/Computed-tomography in a Large Cohort of Patients with Biochemical Recurrence of …

2020

Gallium-68 (Ga) prostate-specific-membrane-antigen positron-emission-tomography/computed-tomography is a highly promising method for imaging primary and recurrent prostate cancer. These dual-modality imaging technologies enable whole-body functional and anatomical evaluation in a single session. This study investigated the performance of Ga-prostate-specific-membrane-antigen-11 positron-emission-tomography/computed-tomography for detecting prostate carcinoma in patients with rising prostate-specific-antigen after primary therapy. Six hundred sixty (660) patients with biochemical recurrence referred for positron-emission-tomography/computed-tomography with Ga-prostate-specific-membrane-antig…

Biochemical recurrenceMalemedicine.medical_specialtyEpidemiologyHealth Toxicology and MutagenesisGallium RadioisotopesRisk Assessment68Ga-PSMA-11Cohort StudiesProstate cancerPositron Emission Tomography Computed TomographymedicineHumansRadiology Nuclear Medicine and imagingRadiation treatment planningPathologicalEdetic AcidGallium IsotopesPositron Emission Tomography-Computed TomographyNeoplasm StagingRetrospective Studiesbusiness.industryProstatic NeoplasmsProstate carcinomamedicine.diseaseLarge cohortTreatment OutcomeGene Expression RegulationLymphatic MetastasisRadiologyNeoplasm Recurrence LocalbusinessOligopeptidesHealth physics
researchProduct

Laser-induced anisotropy in terbium-gallium garnet

1998

Ga5O12 crystal when illuminated at the terbium ion resonance, becomes optically uniaxial. The optical axis is found to be along the beam-propagation axis. The origin of this symmetry breakdown is a thermal effect. Our observation of a conoscopic pattern is accounted for by a quadratic stress and refractive index distribution model. By spatial integration of the conoscopic pattern, the laser-induced stress birefringence variation as a function of the incident beam power is determined.

BirefringenceMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsUniaxial crystalbusiness.industryGeneral EngineeringPhysics::OpticsGeneral Physics and Astronomychemistry.chemical_elementTerbiumLaserTerbium gallium garnetlaw.inventionCrystalOptical axischemistry.chemical_compoundOpticschemistrylawbusinessRefractive indexApplied Physics B: Lasers and Optics
researchProduct

First bodipy–DOTA derivatives as probes for bimodal imaging

2010

The synthesis and the photophysical studies of the first bodipy-DOTA and its In(III), Ga(III) and Cu(II) complexes are reported. The introduction of an isothiocyanate handle generates a new bimodal imaging agent capable of both optical and nuclear imaging.

Boron CompoundsNuclear imagingStereochemistryMolecular ConformationGalliumIndiumCatalysisMolecular conformationHeterocyclic Compounds 1-Ringchemistry.chemical_compoundCoordination ComplexesMaterials ChemistryDOTAFluorescent DyesTomography Emission-Computed Single-PhotonMetals and AlloysGeneral ChemistryCombinatorial chemistryImaging agentSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryPositron-Emission TomographyIsothiocyanateCeramics and CompositesBODIPYCopperChemical Communications
researchProduct