Search results for "Gate"

Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs

1999

In this paper is presented an experimental investigation on the origin of the substrate current after soft-breakdown in n-MOSFETs with 4.5 nm-thick oxide. At lower voltages this current shows a plateau that can be explained with the generation of hole-electron pairs in the space charge region and at the Si-SiO2 interface, and to carrier diffusion between the channel and the substrate. At higher voltages the substrate current steeply increases with voltage, due to trap-assisted tunneling from the substrate valence band to the gate conduction band, which becomes possible for gate voltages higher than the threshold voltage. Measurements on several devices at dark and in the presence of light, …

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

2009

We demonstrate 100 ns write/erase speed of single-walled carbon nanotube field-effect transistor (SWCNT-FET) memory elements. With this high operation speed, SWCNT-FET memory elements can compete with state of the art commercial Flash memories in this figure of merit. The endurance of the memory elements is shown to exceed 104 cycles. The SWCNT-FETs have atomic layer deposited hafnium oxide as a gate dielectric, and the devices are passivated by another hafnium oxide layer in order to reduce surface chemistry effects. We discuss a model where the hafnium oxide has defect states situated above, but close in energy to, the band gap of the SWCNT. The fast and efficient charging and discharging…

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

2014

This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…

Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Effect of humidity on the hysteresis of single walled carbon nanotube field-effect transistors

2008

Single walled carbon nanotube field-effedt transistores (SWCNT FETs) are attributed as possible building blocks for future molecular electronics. But often these transistors seem to randomly display hysteresis in their transfer characteristics. One reason for this is suggested to be water molecules adsorbed to the surface of the gate dielectric in this study we investigate the thysteresis of SWCNT FETs at different relative humidities. We find that SWCNT FETs having atomic layer deposited (ALD) Hf0 2 -Ti0 2 .- Hf0 2 as a gate dielectric retain their. ambient condition hysteresis better in dry N2 environment than the more commonly used SiO 2 gate oxide.

Lateral Size Dependence in FRET between Semiconductor Nanoplatelets and Conjugated Fluorophores

2020

Sensitization of organic molecules by semiconductor nanocrystals is a promising way to boost the absorption of the former, important for applications in fluorescence labeling and photocatalysis. Se...

Imaging of photonic nanopatterns by scanning near-field optical microscopy

2002

We define photonic nanopatterns of a sample as images recorded by scanning near-field optical microscopy with a locally excited electric dipole as a probe. This photonic nanopattern can be calculated by use of the Green’s dyadic technique. Here, we show that scanning near-field optical microscopy images of well-defined gold triangles taken with the tetrahedral tip as a probe show a close similarity to the photonic nanopattern of this nanostructure with an electric dipole at a distance of 15 nm to the sample and tilted 45° with respect to the scanning plane.

Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Defined-length Carbon-rich Conjugated Oligomers

2006

An Expanded 2D Fused Aromatic Network with 90-Ring Hexagons

2022

[EN]Two-dimensional fused aromatic networks (2D FANs) have emerged as a highly versatile alternative to holey graphene. The synthesis of 2D FANs with increasingly larger lattice dimensions will enable new application perspectives. However, the synthesis of larger analogues is mostly limited by lack of appropriate monomers and methods. Herein, we describe the synthesis, characterisation and properties of an expanded 2D FAN with 90-ring hexagons, which exceed the largest 2D FAN lattices reported to date. This work was carried out with support from the Basque Science Foundation for Science (Ikerbasque),POLYMAT, the University of the Basque Country,Gobierno Vasco (BERC programme) and Gobierno d…