Search results for "General Chemistry"
showing 10 items of 13910 documents
Evolution of the microstructure of sputter deposited TaAlON thin films with increasing oxygen partial pressure
2021
Abstract Recently, quaternary oxynitrides of transition metals and aluminum have attracted increasing interest due to their tunable properties. Within the present work, a series of TaAl(O)N films was sputter deposited using constant nitrogen and varying oxygen partial pressures. The films were grown from single element Ta and Al targets. The deposition parameters were adjusted to obtain a Ta/Al atomic ratio of ~50/50 for the oxygen-free film and were held constant for the following depositions, with the exception of the increasing oxygen partial pressure and compensatory decreasing argon partial pressure. Elastic recoil detection analysis revealed oxygen contents of up to ~26 at.%, while th…
Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions
2017
R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…
MOCVD growth of CdO very thin films: Problems and ways of solution
2016
Abstract In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously re…
Characteristics of industrially manufactured amorphous hydrogenated carbon (a-C:H) depositions on high-density polyethylene
2016
Industrially high-density polyethylene (HDPE) was successively covered by two types of amorphous hydrogenated carbon (a-C:H) films, one more flexible (f-type) and the other more robust (r-type). The films have been grown by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. The surface morphology of both types has been studied by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Contact angle measurements and Raman spectroscopy analysis were done to investigate the surface wettability and carbon chemical composition. Both types display similar morphology and grain growth pattern. Contact angle measurements revealed surfa…
Structural characterization of TiO2/TiN O (δ-doping) heterostructures on (1 1 0)TiO2 substrates
2003
Abstract TiO2/TiNxOy δ-doping structures were grown on the top of (1 1 0)TiO2 rutile substrates by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) technique at 750 °C. The samples were analyzed by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and X-ray diffraction techniques (rocking curves and φ-scans). The presence of satellites in the (1 1 0)TiO2 rocking curve revealed the epitaxial growth of 10 period δ-doping structures. The thickness of the TiO2 layers, 84 nm, was deduced from the satellites period. HRTEM observations showed around 1.5 nm thick δ-doping layers, where the presence of nitrogen was detected by EELS. The analy…
How activator ion concentration affects spectroscopic properties on Ba4Y3F17: Er3+, Yb3+, a new perspective up-conversion material
2018
Abstract Ba4Y3F17 with Er3+ and Yb3+, a promising material for up-conversion luminescence, was synthesized. Excellent isomorphic capacity was detected. Low-temperature measurements show that erbium ions are incorporated in multiple lattice positions, which is inconsistent with the current model of Ba4Y3F17 crystal lattice structure. Activator ion concentration has a different impact on 4S3/2 and 4F9/2, states (for the green and red luminescence, respectively) depopulation. Energy transfer from Er3+ 4S3/2 state to Yb3+ is observed even at low temperature (15 K) while Er-Er cross-relaxation is observed from 120 K and above. Yb3+ concentration has a great impact to red-to-green up-conversion l…
Influence of spray trajectories on characteristics of cold-sprayed copper deposits
2021
Abstract Industrial robots are widely used in cold spray (CS) as well as thermal spray to produce various coatings by precisely controlling kinematic parameters during the process. However, the robot trajectory and its effect on the characteristics of CS deposits are important, but not fully studied. This article introduces four typical spray trajectories, including zigzag path, cross path, parallel path, and spiral path, to elaborate thick CS Cu deposits, and characterizes the corresponding Cu deposits, respectively. The experimental results revealed that the spray trajectories have a major influence on the associated thermal history and the residual stress distribution. However, no signif…
High temperature oxidation of Mg2(Si-Sn)
2016
Abstract High temperature oxidation of Mg 2 Si 1- x Sn x alloys ( x = 0.1 ⿿ 0.6) has been investigated. The oxidation rate was slow for temperatures below 430 °C. In the temperature range between 430⿿500 °C all the alloys exhibited breakaway oxidation. The onset temperature of the breakaway region in general decreased with increasing level of Sn in the alloy. The breakaway behavior is explained by a combination of the formation of a non-protective MgO layer and the formation of Sn-rich liquid at the interface between the oxide and Mg depleted Mg 2 Sn.
Melting temperature prediction by thermoelastic instability: An ab initio modelling, for periclase (MgO)
2021
Abstract Melting temperature (TM) is a crucial physical property of solids and plays an important role for the characterization of materials, allowing us to understand their behavior at non-ambient conditions. The present investigation aims i) to provide a physically sound basis to the estimation of TM through a “critical temperature” (TC), which signals the onset of thermodynamic instability due to a change of the isothermal bulk modulus from positive to negative at a given PC-VC-TC point, such that (∂P/∂V)VC,TC = -(∂2F/∂V2) VC,TC = 0; ii) to discuss the case of periclase (MgO), for which accurate melting temperature observations as a function of pressure are available. Using first princip…