Search results for "HOT"
showing 10 items of 14851 documents
High-frequency electrodeless lamps in argon–mercury mixtures
2005
In this paper, numerical and experimental investigations of high-frequency (HF) electrodeless lamps in argon–mercury mixtures are performed. The intensities of the mercury spectral lines having wavelengths λ = 404.66, 435.83, 546.07 nm (7 3S1–6 3P0,1,2) and the resonance line λ = 253.7 nm (6 3 P1–6 1S0) are measured at a wide range of mercury pressures, varying the HF generator current and argon filling pressure. A stationary self-consistent model of HF electrodeless discharge lamp is developed including kinetics of the excited mercury and argon atomic states. Based on the developed model, the radiation characteristics of the discharge plasma are calculated. Numerical simulation of the line…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
Synthesis of ZnO–Ag2CO3–Fe3O4@rGO core–shell structure: magnetically separable photocatalyst for degradation of MB using the Box–Behnken design
2020
In this work, a simple microwave method was utilized to prepare ZnO sheet linked with Fe3O4@rGO core–shell and of Ag2CO3 through formation of the quadri-photocatalytic with high activity. The microstructure, morphology, spectroscopic, and magnetic characteristics of the prepared samples were assessed using XRD, SEM, PL, TEM, FT-IR, DLS, and VSM analysis. The photocatalytic activity of the material was evaluated for photodegradation of methylene blue dye under the UV and visible light with home-made photoreactor. The response surface method in a Box–Behnken design was utilized to design the experiments. The parameters affecting the efficiency of the degradation including, pH (5–9), photocata…
Magnetization reversal of the domain structure in the anti-perovskite nitride Co3FeN investigated by high-resolution X-ray microscopy
2016
We performed X-ray magnetic circular dichroism (XMCD) photoemission electron microscopy imaging to reveal the magnetic domain structure of anti-perovskite nitride Co3FeN exhibiting a negative spin polarization. In square and disc patterns, we systematically and quantitatively determined the statistics of the stable states as a function of geometry. By direct imaging during the application of a magnetic field, we revealed the magnetic reversal process in a spatially resolved manner. We compared the hysteresis on the continuous area and the square patterns from the magnetic field-dependent XMCD ratio, which can be explained as resulting from the effect of the shape anisotropy, present in nano…
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
EBSD, XRD and SRS characterization of a casting Al-7wt%Si alloy processed by equal channel angular extrusion: Dislocation density evaluation
2019
Abstract Aluminum‑silicon (Al Si) alloys of high silicon contents are composite materials; they are used whenever high casting properties are required. They are slightly ductile below 8wt%Si. An increase in ductility can be obtained by refining Si-crystals in elaboration or by a further hot working. In the present work, an Al-7wt%Si alloy was processed by Equal Channel Angular Extrusion (ECAE) at temperatures 20 °C and 160 °C up to three passes. The die was formed by two cylindrical channels with characteristic angles Φ = 110° and Ψ = 0. EBSD, X ray diffraction (XRD) and Strain Rate Sensitivity (SRS) were used to characterize the microstructure and the mechanical properties. High levels of …