Search results for "Hall Effect"
showing 10 items of 702 documents
Transport properties of silicon doped n-indium selenide
1992
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
Magnetic skyrmions: from fundamental to applications
2016
In this topical review, we will discuss recent advances in the field of skyrmionics (fundamental and applied aspects) mainly focusing on skyrmions that can be realized in thin film structures where an ultrathin ferromagnetic layer (<1 nm) is coupled to materials with large spin-orbit coupling. We review the basic topological nature of the skyrmion spin structure that can entail a stabilization due to the chiral exchange interaction present in many multilayer systems with structural inversion asymmetry. The static spin structures and the dynamics of the skyrmions are also discussed. In particular, we show that skyrmions can be displaced with high reliability and efficiency as needed for t…
On the Rigorous Calculation of All Ohmic Losses in Rectangular Waveguide Multi-Port Junctions
2005
In this paper, all ohmic losses effects present in rectangular waveguide multi-port junctions are rigorous and efficiently computed. For this purpose, a new formulation based on the theory of cavities, which provides generalized admittance matrix representations for such junctions, is proposed. To validate this theory, we have successfully compared our results with numerical data of a lossy E-plane T-junction and of a hollow waveguide, as well as with experimental measurements of a real H-plane T-junction.
Transitions in the Quasiparticle Picture
2007
In this chapter we deal with electromagnetic and beta-decay transitions in terms of independent quasiparticles. Transition amplitudes are derived for transitions between one-quasiparticle states and between two-quasiparticle states. Derivations and applications are made within the BCS framework, but the expressions for the amplitudes are valid also in the LNBCS description.
Optical phonons and electron-phonon interaction in quantum wires.
1993
A unified macroscopic continuum theory for the treatment of optical-phonon modes in quantum-wire structures is established. The theory is based on a Lagrangian formalism from which the equations of motion are rigorously derived. They consist of four coupled second-order differential equations for the vibrational amplitude and electrostatic potential. The matching boundary conditions are obtained from the fundamental equations. It is shown that no incompatibility exists between mechanical and electrostatic matching boundary conditions when a correct mathematical treatment of the problem is given. The particular case of a GaAs quantum wire buried in AlAs, where the phonons can be considered c…
Multiphoton-ionization transition amplitudes and the Keldysh approximation.
1989
The Keldysh approximation to treat the multiphoton ionization of atoms is reconsidered. It is shown that, if one consistently uses the hypothesis under which the approximation should be valid (essentially, that of a weak, short-range binding potential), a Keldysh-like term results as an approximation to the first term of a uniformly convergent series in powers of the binding potential. No cancellation occurs when higher-order terms are taken into account. This result allows one to consider the Keldysh approximation as a well-defined theoretical model, without implying, however, that it is adequate to describe multiphoton ionization of real atoms.
Resonant hyper-Raman scattering in spherical quantum dots
1998
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with the help of a continuum model satisfying both the mechanical and electrostatic matching conditions at the interface. An explicit expression for the hyper-Raman scattering efficiency is derived, which is valid for incident two-photon energy close to the exciton resonances. The dipole selection rules f…
Spectral properties of rotating electrons in quantum dots and their relation to quantum Hall liquids
2007
The exact diagonalization technique is used to study many-particle properties of interacting electrons with spin, confined in a two-dimensional harmonic potential. The single-particle basis is limited to the lowest Landau level. The results are analyzed as a function of the total angular momentum of the system. Only at angular momenta corresponding to the filling factors 1, 1/3, 1/5 etc. the system is fully polarized. The lowest energy states exhibit spin-waves, domains, and localization, depending on the angular momentum. Vortices exist only at excited polarized states. The high angular momentum limit shows localization of electrons and separation of the charge and spin excitations.
Strongly correlated states of trapped ultracold fermions in deformed Landau levels
2015
We analyze the strongly correlated regime of a two-component trapped ultracold fermionic gas in a synthetic non-Abelian U(2) gauge potential, that consists of both a magnetic field and a homogeneous spin-orbit coupling. This gauge potential deforms the Landau levels (LLs) with respect to the Abelian case and exchanges their ordering as a function of the spin-orbit coupling. In view of experimental realizations, we show that a harmonic potential combined with a Zeeman term, gives rise to an angular momentum term, which can be used to test the stability of the correlated states obtained through interactions. We derive the Haldane pseudopotentials (HPs) describing the interspecies contact inte…
Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system
1992
We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in…