Search results for "Hard"
showing 10 items of 2294 documents
Radiation tolerance of NROM embedded products
2010
Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…
Optical frequency domain reflectometer distributed sensing using microstructured pure silica optical fibers under radiations
2016
International audience; We investigated the capability of micro-structured optical fibers to develop multi-functional, remotely-controlled, Optical Frequency Domain Reflectometry (OFDR) distributed fiber based sensors to monitor temperature in nuclear power plants or high energy physics facilities. As pure-silica-core fibers are amongst the most radiation resistant waveguides, we characterized the response of two fibers with the same microstructure, one possessing a core elaborated with F300 Heraeus rod representing the state-of-the art for such fiber technology and one innovative sample based on pure sol-gel silica. Our measurements reveal that the Xray radiations do not affect the capaci…
ESR and PL centers induced by gamma rays in silica
1996
We have studied the point defects created by γ irradiation in various types of commercial silica glasses, including both natural and synthetic samples, with different OH content, in the low dose regime (0.05–100 Mrad). We found that the growth rate of E′ centers depends strongly on the silica type, ranging from 2 × 1015 cm−3 Mrad−1 to 6 × 1017 cm−3 Mrad−1. Samples of natural silica are rather susceptible to γ ray exposure, as E′ concentration saturates (typically 5 × 1017 cm−3) for doses as low as a few Mrads. For both synthetic and natural samples, the radiation hardness is higher in wet than in dry silica. Moreover, we found a strict correlation between the concentration of E′ centers and…
Hardening and long-range stress formation in lithium fluoride induced by energetic ions
2003
Abstract LiF crystals were irradiated with Au, Pb, Bi and S ions in the energy range 400–2300 MeV and studied by means of Vickers microindentation. Remarkable hardening effects are observed which depend on the applied fluence and ion species, and correlate with the ion energy loss along the ion path. Structural investigations reveal irradiation-induced stress extending deep into the adjacent non-irradiated crystal and leading to the formation of dislocations. X-ray diffraction measurements of the irradiated crystals show a decrease of the lattice constant indicating the presence of internal stress.
Preliminary corrosion studies of P-91 in flowing lead–lithium with and without magnetic field for Indian lead–lithium ceramic breeder test blanket mo…
2014
To study the corrosion of P-91 (9% chromium and 1% molybdenum) material with lead–lithium (Pb–Li) eutectic, two experiments were carried out in a forced convection loop, at eutectic temperature of 550 °C. The first experiment was carried out at a velocity of 15 cm s−1 for 1000 h and the second experiment, at a velocity of 30 cm s−1 for 2700 h. In both the experiments, P-91 sample coupons were exposed to Pb–Li flow in the presence and absence of magnetic field. Samples were analyzed using an optical microscope, scanning electron microscope (SEM) and electron probe micro-analyzer (EPMA). Micro-Vickers hardness testing was also carried out. Dissolution of elements into liquid metal is the main…
The Mu3e Data Acquisition
2020
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu^+\to e^+e^-e^+$ with a sensitivity of one in 10$^{16}$ muon decays. The first phase of the experiment is currently under construction at the Paul Scherrer Institute (PSI, Switzerland), where beams with up to 10$^8$ muons per second are available. The detector will consist of an ultra-thin pixel tracker made from High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), complemented by scintillating tiles and fibres for precise timing measurements. The experiment produces about 100 Gbit/s of zero-suppressed data which are transported to a filter farm using a network of FPGAs and fast optical links. On the filte…
Pileup and underlying event mitigation with iterative constituent subtraction
2019
Abstract The hard-scatter processes in hadronic collisions are often largely contaminated with soft background coming from pileup in proton-proton collisions, or underlying event in heavy-ion collisions. This paper presents a new background subtraction method for jets and event observables (such as missing transverse energy) which is based on the previously published Constituent Subtraction algorithm. The new subtraction method, called Iterative Constituent Subtraction, applies event-wide implementation of Constituent Subtraction iteratively in order to fully equilibrate the background subtraction across the entire event. Besides documenting the new method, we provide guidelines for setting…
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
2019
Abstract The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50 μ m ) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total si…
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.
AGATA-Advanced GAmma Tracking Array
2012
WOS: 000300864200005