6533b871fe1ef96bd12d253d

RESEARCH PRODUCT

Radiation tolerance of NROM embedded products

Ernesto Della SalaFelix PalumboCalogero PaceD. CorsoArik KivFelice CrupiYakov RoizinDavid FuksIsodiana CrupiSebania LibertinoGiuseppe CapuanoAntonio MarinoGil CassutoM. LisianskySalvatore Lombardo

subject

Nuclear and High Energy PhysicsMaterials scienceONOradiation effectbusiness.industryFloating gate memorieRadiationSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materialaw.inventionNon-volatile memoryCapacitorRadiation toleranceNuclear Energy and EngineeringlawLogic gatePhysical phenomenaOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningradiation hardening

description

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate ( 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance © 2010 IEEE.

yearjournalcountryeditionlanguage
2010-08-01
10.1109/tns.2010.2052286http://hdl.handle.net/10447/176686