Search results for "Hardening"

showing 10 items of 133 documents

Formation of dislocations and hardening of LiF under high-dose irradiation with 5–21 MeV 12C ions

2017

R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support.

010302 applied physicsEnergy lossMaterials sciencePhysics::Instrumentation and DetectorsAtomic force microscopyAstrophysics::High Energy Astrophysical PhenomenaPhysics::Medical Physicsmacromolecular substances02 engineering and technologyGeneral ChemistryNanoindentation021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsIsotropic etchingElastic collisionIonPhysics::Plasma Physics0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Hardening (metallurgy)General Materials ScienceIrradiationAtomic physics0210 nano-technologyApplied Physics A
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MeV-energy Xe ion-induced damage in LiF: The contribution of electronic and nuclear stopping mechanisms

2016

The contribution of electronic and nuclear damage mechanisms in the modification of structure and micromechanical properties of LiF crystals irradiated with 52, 224, and 450 MeV Xe ions at fluences 1010–1014 ions cm−2 has been studied. The ion-induced formation of dislocations and hardening in LiF at fluences above 1010 ions cm−2 has been observed. The depth profiles of nanoindentation show a joint contribution of electronic excitation and nuclear (impact) mechanisms to the ion-induced hardening. The electronic excitation mechanism dominates in the major part of the ion range while the impact mechanism prevails in a narrow zone at the end of the ion range. The efficiency of hardening produc…

010302 applied physicsMaterials science02 engineering and technologyNanoindentation021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsIon0103 physical sciencesHardening (metallurgy)SubstructureIrradiationDislocationAtomic physics0210 nano-technologyOrder of magnitudeExcitationphysica status solidi (b)
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SiC Power Switches Evaluation for Space Applications Requirements

2016

We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…

010302 applied physicsMaterials scienceTechnology pushbusiness.industryMechanical EngineeringElectrical engineeringJFET02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower (physics)Stress (mechanics)Reliability (semiconductor)Mechanics of Materials0103 physical sciencesMOSFETElectronic engineeringGeneral Materials SciencePower MOSFET0210 nano-technologybusinessRadiation hardeningMaterials Science Forum
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Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions

2020

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceOptical absorptionAnalytical chemistryDepth profile of hardeningCathodoluminescence02 engineering and technologyRadiation021001 nanoscience & nanotechnologySwift heavy ions01 natural sciencesFluenceRadiation defectsSpectral lineIonCrystalFluence dependenceIonization0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Irradiation0210 nano-technologyInstrumentationMagnesium oxideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Depth profiles of damage creation and hardening in MgO irradiated with GeV heavy ions

2019

This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 “Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion applications”. The views and opinions expressed herein do not necessarily reflect those of the European Commission.

010302 applied physicsNuclear and High Energy PhysicsPhotoluminescenceMaterials scienceDislocations02 engineering and technologyNanoindentation021001 nanoscience & nanotechnologySwift heavy ions01 natural sciencesMgO crystalsNanoindentationIonCondensed Matter::Materials ScienceIndentation0103 physical sciencesHardening (metallurgy):NATURAL SCIENCES:Physics [Research Subject Categories]IrradiationComposite materialDislocation0210 nano-technologySpectroscopyInstrumentationPhotoluminescenceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft

2009

Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…

010302 applied physicsPhysicsNuclear and High Energy PhysicsProton010308 nuclear & particles physicsbusiness.industryDetector7. Clean energy01 natural sciencesCadmium telluride photovoltaicsParticle detectorSemiconductor detectorSemiconductor13. Climate action0103 physical sciencesOptoelectronicsIrradiationbusinessInstrumentationRadiation hardeningNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization

2020

A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…

010302 applied physicsSignal processingMaterials scienceDosimeterSettore ING-IND/20 - Misure E Strumentazione Nucleari010308 nuclear & particles physicsbusiness.industryAnalog-to-digital converterHardware_PERFORMANCEANDRELIABILITYFlash ADC01 natural sciencesPower (physics)law.inventionCMOSlawAnalog-to-Digital converter current-to-voltage interfaces Dosimeter edgeless transistors (ELT) Floating Gate MOS radiation hardening by design (RHBD) total ionizing dose (TID)Absorbed dose0103 physical sciencesHardware_INTEGRATEDCIRCUITSCalibrationOptoelectronicsbusiness2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON)
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UV-screening and springtime recovery of photosynthetic capacity in leaves of Vaccinium vitis-idaea above and below the snow pack

2019

International audience; Evergreen plants in boreal biomes undergo seasonal hardening and dehardening adjusting their photosynthetic capacity and photoprotection; acclimating to seasonal changes in temperature and irradiance. Leaf epidermal ultraviolet (UV)-screening by flavonols responds to solar radiation, perceived in part through increased ultraviolet-B (UV-B) radiation, and is a candidate trait to provide cross-photoprotection. At Hyytiälä Forestry Station, central Finland, we examined whether the accumulation of flavonols was higher in leaves of Vaccinium vitis-idaea L. growing above the snowpack compared with those below the snowpack. We found that leaves exposed to colder temperature…

0106 biological sciences0301 basic medicineTime FactorsPhotoinhibitionBOREALPhysiologyPlant ScienceForests01 natural sciencesPlant EpidermisAnthocyaninsSoilFlavonolsLOW-TEMPERATURESnowPhotosynthesis1183 Plant biology microbiology virologychemistry.chemical_classificationspring dehardening.CLIMATE-CHANGEbiologyChemistryTemperatureUnderstoreyHorticultureLIGHTSeasonsVacciniumUltraviolet RaysGrowing seasonPhotosynthesisDWARF SHRUB03 medical and health sciencesLEAFPHOTOSYSTEM-IIGenetics[SDV.BV]Life Sciences [q-bio]/Vegetal BiologyVaccinium vitis-idaeaFlavonoidsSpring dehardeningPhotoprotectionSpectral qualityPhotosystem II Protein ComplexPigments Biological15. Life on landEvergreenbiology.organism_classificationPhotosynthetic capacitySUB-ARCTIC HEATHPlant Leaves030104 developmental biology13. Climate actionPhotoprotectionWINTERB RADIATIONArctic browning010606 plant biology & botany
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Heat hardening capacity in Drosophila melanogaster is life stage-specific and juveniles show the highest plasticity

2019

Variations in stress resistance and adaptive plastic responses during ontogeny have rarely been addressed, despite the possibility that differences between life stages can affect species' range margins and thermal tolerance. Here, we assessed the thermal sensitivity and hardening capacity of Drosophila melanogaster across developmental stages from larval to the adult stage. We observed strong differences between life stages in heat resistance, with adults being most heat resistant followed by puparia , pupae and larvae . The impact of heat hardening (1 h at 35°C) on heat resistance changed during ontogeny, with the highest positive effect of hardening observed in puparia and pupae and the …

0106 biological scienceslife stage-specific plasticityHot TemperaturelämmönsietoOntogenyZoologyLife stage-specific plasticitythermal sensitivityBiologyPlasticity010603 evolutionary biology01 natural sciences03 medical and health sciencesThermal sensitivityJuvenileClimate changeHeat resistanceAnimalsAdult stageHeat shock030304 developmental biology0303 health sciencesLarvaEvolutionary Biologyhardeningheat resistancefungiPupabanaanikärpänenilmastonmuutoksetAgricultural and Biological Sciences (miscellaneous)Pupaclimate changeDrosophila melanogasterEctothermLarvaHardeningta1181General Agricultural and Biological SciencesHeat-Shock Response
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Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions

2019

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma

02 engineering and technologyHardware_PERFORMANCEANDRELIABILITYgammasäteily7. Clean energy01 natural sciencesanalog single-event transient (ASET)Ionizationsingle-event effects (SEE)0202 electrical engineering electronic engineering information engineeringAnnan elektroteknik och elektronikElectronic circuitPhysicsprotonsSubthreshold conductionionisoiva säteilyröntgensäteilyGamma raygamma-raysHardware and ArchitectureAtomic physicsVoltage referencemikroelektroniikkaprotonitComputer Networks and Communicationslcsh:TK7800-8360voltage referenceIonheavy-ions0103 physical sciencesionizationradiation hardening by design (RHBD)X-raysHardware_INTEGRATEDCIRCUITSMicroelectronicsElectrical and Electronic Engineeringhiukkassäteilybandgap voltage reference (BGR)Other Electrical Engineering Electronic Engineering Information Engineering010308 nuclear & particles physicsbusiness.industry020208 electrical & electronic engineeringlcsh:Electronicsspace electronicstotal ionization dose (TID)Analog single-event transient (ASET); Bandgap voltage reference (BGR); CMOS analog integrated circuits; Gamma-rays; Heavy-ions; Ionization; Protons; Radiation hardening by design (RHBD); Reference circuits; Single-event effects (SEE); Space electronics; Total ionization dose (TID); Voltage reference; X-raysmikropiiritsäteilyfysiikkaControl and Systems Engineeringreference circuitsSignal ProcessingbusinessSpace environmentHardware_LOGICDESIGNCMOS analog integrated circuits
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