Search results for "Hardening"
showing 10 items of 133 documents
Internal-variable constitutive model for rate-independent plasticity with hardening saturation surface
1998
An elastic-plastic material model with internal variables and thermodynamic potential, not admitting hardening states out of a saturation surface, is presented. The existence of such a saturation surface in the internal variables space — a consequence of the boundedness of the energy that can be stored in the material's internal micro-structure — encompasses, in case of general kinematic/isotropic hardening, a one-parameter family of envelope surfaces in the stress space, which in turn is enveloped by a limit surface. In contrast to a multi-surface model, noad hoc rules are required to avoid the intersection between the yield and bounding/envelope surface. The flow laws of the proposed mode…
Dynamical features of forest interactions
2000
Abstract The 3D computer simulations presented here were developed to study at the mesoscopic scale the formation of junctions and their impact on hardening of crystals. The simulations consider the evolution of a dislocation interacting with immobile dislocations in a fcc single crystal of copper where we incorporate well known dislocation interaction mechanisms. From these studies, we deduced a `breaking angle' which characterize the strength of the junctions.
Effect of ageing on the morphology and creep and recovery of polymer-modified bitumens
2018
Polymer additives are used to improve the properties of road bitumens including their oxidative resistance. However, their usage as anti-oxidative materials remains relatively unclear. This study aims to investigate the changes in the morphology and the rheological response of polymer modified bitumens used in road pavement construction caused by ageing. An elastomer (radial styrene butadiene styrene, SBS) and a plastomer (ethyl vinyl acetate, EVA) polymer were mixed with one base bitumen at three polymer concentrations. The bitumens were RTFO and PAV aged. The morphology of the bitumens was captured by fluorescence microscopy while the rheological properties were measured by means of the m…
Ion-induced hardening in LiF: Energy loss and fluence effects
2006
The behavior of hardening of LiF crystals irradiated with swift Au, Pb, Bi, Kr, Ni, Ti and S ions with a specific energy of 10 MeV/u is analyzed. The dispersion strengthening as the main mechanism of hardening is verified.
MeV–GeV ion induced dislocation loops in LiF crystals
2014
Abstract Formation of prismatic dislocation loops and evolution of dislocation structure in LiF crystals irradiated with swift 238U and 36S ions of specific energy 11 MeV/u at fluences up to 1013 ions cm−2 has been investigated using chemical etching and AFM. It has been shown that prismatic dislocations are formed in the stage of track overlapping above threshold fluences Φ ≈ 109 U cm−2 and Φ ≈ 1010 S cm−2. The diameter of dislocation loops reaches 600–1000 nm for 238U ions and 200 nm for 36S ions. The dislocations created by 238U ions are arranged in rows along the direction of ion beam, whereas 36S ions create freely distributed dislocation loops each of them being oriented along the ion…
Radiation tolerance of NROM embedded products
2010
Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…
ESR and PL centers induced by gamma rays in silica
1996
We have studied the point defects created by γ irradiation in various types of commercial silica glasses, including both natural and synthetic samples, with different OH content, in the low dose regime (0.05–100 Mrad). We found that the growth rate of E′ centers depends strongly on the silica type, ranging from 2 × 1015 cm−3 Mrad−1 to 6 × 1017 cm−3 Mrad−1. Samples of natural silica are rather susceptible to γ ray exposure, as E′ concentration saturates (typically 5 × 1017 cm−3) for doses as low as a few Mrads. For both synthetic and natural samples, the radiation hardness is higher in wet than in dry silica. Moreover, we found a strict correlation between the concentration of E′ centers and…
Hardening and long-range stress formation in lithium fluoride induced by energetic ions
2003
Abstract LiF crystals were irradiated with Au, Pb, Bi and S ions in the energy range 400–2300 MeV and studied by means of Vickers microindentation. Remarkable hardening effects are observed which depend on the applied fluence and ion species, and correlate with the ion energy loss along the ion path. Structural investigations reveal irradiation-induced stress extending deep into the adjacent non-irradiated crystal and leading to the formation of dislocations. X-ray diffraction measurements of the irradiated crystals show a decrease of the lattice constant indicating the presence of internal stress.
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
2019
Abstract The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50 μ m ) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total si…
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.