Search results for "Heterojunction"

Synergies and compromises between charge and energy transfers in three-component organic solar cells

2020

In this paper, we developed different three-component organic heterojunction structures supported by PET/ITO substrates with the aim to study the possible synergies and/or compromises between charge transfer (CT) and energy transfer (ET) processes in organic solar cells (OSCs). As components, we employed poly(3-hexylthiophene-2,5-diyl) (P3HT; donor), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM; acceptor) and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) that is known to give good ET to P3HT. At first, we observed that in a planar heterojunction (PHJ) solar cell, F8BT has to be properly located in between P3HT and PCBM to get a cascade energy level configuration allowing for a b…

Bi-Layer GaOHPc:PCBM/P3HT:PCBM Organic Solar Cell

2011

Donor–Acceptor Interfaces by Engineered Nanoparticles Assemblies for Enhanced Efficiency in Plastic Planar Heterojunction Solar Cells

2016

Precisely positioning functionalized gold nanoparticles assemblies at planar donor-acceptor interfaces results in 14-fold enhancement of power conversion efficiency in P3HT/PCBM organic solar cells on plastic (ITO/PET) substrates. This result has been achieved by employing naphthalenethiol-capped gold nanoparticles (NT-Au-NPs) produced by laser ablation in liquid and size varied in the 10-30 nm range. Upon surface functionalization with the aromatic thiol, these particles self-assemble in submicrometer aggregates, which give increased light scattering. When these aggregates are deposited in the planar heterojunction between the donor and the acceptor systems, the localized scattering leads …

Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

2012

Abstract After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we will present the growth of InGaN NWs on a GaN NW base. It will be shown that the morphology and structural properties of the InGaN NW sections depend on the In content: for high In content a flat top is observed and plastic relaxation is occuring, with mismatch dislocations formed at the InGaN/GaN interface. By contrast, for In content below 25% InGaN NWs exhibit a pencil-like shape assigned to a purely elastic strain relaxation process…

Improved Crystalline Structure and Enhanced Photoluminescence of ZnO Nanolayers in Bi2Se3/ZnO Heterostructures

2019

The Bi2Se3/ZnO heterostructure is a new combination of high- and low-band-gap nanomaterials that can be implemented for optoelectronic devices. The influence of the Bi2Se3 substrate on crystallizat...

The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures

2016

We characterized the interfaces of heterostructures with different stack sequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealing sharp and rough interfaces, respectively. Magnetometry and magnetoresistance measurements do not show a detectable exchange bias coupling for the multistack with sharp interface. Instead, the heterostructures with rough and chemically intermixed interfaces exhibit a sizable exchange bias coupling. Furthermore, we find a temperature-dependent irreversible magnetization behavior and an exponential decay of coercive and exchange bias field with temperature suggesting a possible spin-glass-like state at the interface of both stacks.

A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission

2010

This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

2018

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations

2018

Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …

Low Conductive Electrodeposited Poly(2,5-dimethoxyaniline) as a Key Material in a Double Lateral Heterojunction, for Sub-ppm Ammonia Sensing in Humid…

2019

We present a new device called a double lateral heterojunction (DLH) as an ammonia sensor in humid atmosphere. It combines polyaniline derivatives in their poor conducting state with a highly conductive molecular material, lutetium bisphthalocyanine, LuPc2. Polyaniline and poly(2,5-dimethoxyaniline) are electrodeposited on ITO interdigitated electrodes, leading to an original device that can be obtained only by electrochemistry and not by other solution processing techniques. Both polymers lead to highly conducting materials that require a neutralization step before their coverage by LuPc2. While the device based on polyaniline shows ohmic behavior, the nonlinear I- V characteristics of the…