Search results for "ICO"

showing 10 items of 30544 documents

Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft

2009

Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…

010302 applied physicsPhysicsNuclear and High Energy PhysicsProton010308 nuclear & particles physicsbusiness.industryDetector7. Clean energy01 natural sciencesCadmium telluride photovoltaicsParticle detectorSemiconductor detectorSemiconductor13. Climate action0103 physical sciencesOptoelectronicsIrradiationbusinessInstrumentationRadiation hardeningNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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A summary of expressions for central performance parameters of high efficiency solar cell concepts

2019

This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.

010302 applied physicsPhysicsbusiness.industryOpen-circuit voltageSemiconductor device modeling02 engineering and technology021001 nanoscience & nanotechnologySolar energyTopology01 natural scienceslaw.inventionsymbols.namesakelawLambert W function0103 physical sciencesSolar cellsymbolsEnergy transformation0210 nano-technologybusinessShort circuitVoltage2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
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Real space observation of two-dimensional Bloch wave interferences in a negative index photonic crystal cavity

2008

We report here the direct observation of two-dimensional (2D) Bloch wave interferences in a negative index photonic crystal by using optical near-field microscopy techniques. The photonic crystal is formed by a defectless honeycomb lattice of air holes etched in III-V semiconductor slab. A scanning near-field optical microscope is used to visualize spatially, as well as spectrally, the light distribution inside the photonic crystal. The recorded near-field spectra and maps presented here unambiguously demonstrate the Bloch wave interferences within the photonic crystal. Then, the spectral and spatial evolution of these interferences allows us to recover experimentally the 2D band diagram of…

010302 applied physicsPhysicsbusiness.industryPhysics::OpticsMicrostructured optical fiberCondensed Matter Physics01 natural sciencesYablonoviteElectronic Optical and Magnetic MaterialsOpticsSemiconductorNegative refraction0103 physical sciencesMicroscopyBand diagram[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics010306 general physicsbusinessComputingMilieux_MISCELLANEOUSPhotonic crystalBloch wave
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Framework for complex quantum state generation and coherent control based on on-chip frequency combs

2018

Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.

010302 applied physicsQuantum opticsPhysicsbusiness.industryFiber (mathematics)Electronic Optical and Magnetic MaterialPhysics::OpticsSettore ING-INF/02 - Campi ElettromagneticiQuantum information processingSettore ING-INF/01 - Elettronica01 natural sciences010309 opticsMechanics of MaterialsCoherent controlQuantum state0103 physical sciencesScalabilitySilicon chipOptoelectronicsCoherent statesbusinessFrontiers in Optics / Laser Science
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Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

2017

AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…

010302 applied physicsSiliconMetallurgychemistry.chemical_elementdirectional solidification02 engineering and technologysolar silicon021001 nanoscience & nanotechnology01 natural sciencesMaterialien - Solarzellen und TechnologieKristallisation und Waferingtransition metalsSilicium-PhotovoltaikchemistryImpurityPhotovoltaik0103 physical sciencesPhysical and Theoretical ChemistryNeutron activation analysis0210 nano-technologyfeedstockneutron activation analysis
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Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect

2017

To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI s…

010302 applied physicsSpintronicsCondensed matter physicsChemistryPhononGeneral Physics and AstronomySilicon on insulator02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesStability (probability)Structural stability0103 physical sciencesOrbit (dynamics)0210 nano-technologyElectronic band structureSpin-½Journal of Applied Physics
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ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

2016

Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…

010302 applied physicsTelecomunicacionesMaterials sciencebusiness.industrySchottky diodePhotodetector02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPhotodiodelaw.inventionResponsivityWavelengthSemiconductorlaw0103 physical sciencesOptoelectronicsGrain boundary0210 nano-technologybusinessMolecular beam epitaxy
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Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing

2013

International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

010302 applied physicsTelecomunicacionesPhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)Annealing (metallurgy)business.industryWide-bandgap semiconductorNanowire02 engineering and technology021001 nanoscience & nanotechnologyMicrostructure01 natural sciencesHomogeneous distributionRadiative efficiency0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Optoelectronics0210 nano-technologybusinessWurtzite crystal structure
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High-pressure x-ray-absorption study of GaSe

2002

The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…

010302 applied physics[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph]Materials scienceCondensed matter physicsAbsorption spectroscopybusiness.industryPlane (geometry)[SDU.STU.GP]Sciences of the Universe [physics]/Earth Sciences/Geophysics [physics.geo-ph]X-ray02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesOpticsSemiconductorPhase (matter)0103 physical sciencesCompressibility[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyAbsorption (electromagnetic radiation)businessSingle crystalComputingMilieux_MISCELLANEOUS
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Review of the PEA Method for Space Charge Measurements on HVDC Cables and Mini-Cables

2019

This review takes into account articles and standards published in recent years concerning the application of the Pulsed Electro Acoustic (PEA) method for space charge measurement on High Voltage Direct Current (HVDC) cables and mini-cables. Since the 80s, the PEA method has been implemented for space charge measurements on flat specimens in order to investigate space charge phenomena and to evaluate the ageing of dielectrics. In recent years, this technique has been adapted to cylindrical geometry. Several studies and experiments have been carried out on the use of the PEA method for full size cables and HVDC cable models. The experiments have been conducted using different arrangements of…

010302 applied physicspulsed Electroacoustic technique (PEA)Cylindrical geometryControl and Optimizationlcsh:TRenewable Energy Sustainability and the EnvironmentComputer science020209 energyEnergy Engineering and Power TechnologyMechanical engineering02 engineering and technologylcsh:Technology01 natural sciencesSpace chargeHVDC cablesSpace chargeSettore ING-IND/31 - ElettrotecnicaReliability (semiconductor)0103 physical sciences0202 electrical engineering electronic engineering information engineeringHigh-voltage direct currentElectrical and Electronic EngineeringEngineering (miscellaneous)Energy (miscellaneous)
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