Search results for "IDE"

showing 10 items of 55536 documents

Analytical description of solid particles kinematics due to a fluid flow and application to the depiction of characteristic kinematics in cold sprayi…

2017

Abstract In several multiphase flow applications such as fluidization, thermal spraying, atomization manufacturing and so on, the Newton's law is widely enacted to formulate the particle/fluid kinematic interaction and then to compute particles kinematics. This paper provides analytical solutions of the Newton's law in its time-dependent formulation or simplified formulation, the latter being a reduction of the time dependent problem into a spatial description of the particle motion. It was found that the velocity solution is strictly similar in both cases so that the simplified formulation is viable. The W_ 1 branch of the Lambert's function yields the analytical particle residence time an…

010302 applied physicsChemistryGeneral Chemical EngineeringMultiphase flow02 engineering and technologyMechanicsKinematics021001 nanoscience & nanotechnologyResidence time (fluid dynamics)01 natural sciencessymbols.namesakeMach number0103 physical sciencesFluid dynamicssymbolsParticleParticle velocity0210 nano-technologyMagnetosphere particle motionPowder Technology
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The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

2015

We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the AlN surface and the growth of large cubic crystallites, namely, AlN pedestals. Further growths of GaN NWs assembly reveal that the GaN 2D layer found at the bottom of the NW assembly is the result of the coalescence of Ga-polar pyramids, whereas AlN pedestals are observed as preferential but not exclusive NW nucleation sites. NWs are N-polar or exhibit inversion domains with a Ga-polar core/N-polar she…

010302 applied physicsCoalescence (physics)[PHYS]Physics [physics]Materials sciencebusiness.industryNucleationWide-bandgap semiconductorNanowireGeneral Physics and AstronomyNanotechnology02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesBuffer (optical fiber)Nanolithography0103 physical sciencesOptoelectronicsCrystalliteSelf-assembly0210 nano-technologybusinessComputingMilieux_MISCELLANEOUS
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The filter and calibration wheel for the ATHENA wide field imager

2016

The planned filter and calibration wheel for the Wide Field Imager (WFI) instrument on Athena is presented. With four selectable positions it provides the necessary functions, in particular an UV/VIS blocking filter for the WFI detectors and a calibration source. Challenges for the filter wheel design are the large volume and mass of the subsystem, the implementation of a robust mechanism and the protection of the ultra-thin filter with an area of 160 mm square. This paper describes performed trade-offs based on simulation results and describes the baseline design in detail. Reliable solutions are envisaged for the conceptual design of the filter and calibration wheel. Four different varian…

010302 applied physicsComputer scienceDetectorFilter wheel mechanism FEM structural and acoustic analysis ATHENA WFIVolume (computing)Blocking (statistics)01 natural sciencesSquare (algebra)Settore FIS/05 - Astronomia E AstrofisicaPosition (vector)Filter (video)0103 physical sciencesElectronic engineeringCalibration010303 astronomy & astrophysicsSimulation
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Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure

2017

The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzit…

010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencePhotoluminescenceBand gapAnalytical chemistryWide-bandgap semiconductorGeneral Physics and AstronomyMineralogyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesNanocrystalline materialPhase (matter)0103 physical sciencesAbsorption (chemistry)Thin film0210 nano-technologyWurtzite crystal structure
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Flexible and efficient computer-aided design tool for advanced comb-line rectangular waveguide filters

2015

A very flexible and efficient computer-aided design CAD tool, specifically suited for advanced comb-line rectangular waveguide filters, is presented in this work. The developed software tool, which makes use of a full-wave analysis technique based on the Boundary Integral-Resonant Mode Expansion method, allows loading the considered comb-line resonators with any number of radially symmetrical partial-height metallic posts. The implemented CAD tool also allows dealing with coupling windows of arbitrary cross-section, thus drastically enhancing the flexibility of the CAD process. The excitation of the analyzed components, which is performed using generalized coaxial probes, has also been inte…

010302 applied physicsCouplingWaveguide filterEngineeringbusiness.industryProcess (computing)020206 networking & telecommunicationsCAD02 engineering and technologycomputer.software_genre01 natural sciencesComputer Graphics and Computer-Aided DesignComputer Science ApplicationsResonatorComponent (UML)0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringComputer Aided DesignElectrical and Electronic EngineeringCoaxialbusinesscomputerInternational Journal of RF and Microwave Computer-Aided Engineering
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Photo-electrical and transport properties of hydrothermal ZnO

2016

We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…

010302 applied physicsElectron mobilityPhotoluminescenceChemistryBand gapExcitonWide-bandgap semiconductorGeneral Physics and Astronomy02 engineering and technologyCarrier lifetime021001 nanoscience & nanotechnology01 natural sciencesAcceptorMolecular physicsCrystalCondensed Matter::Materials Science0103 physical sciencesAtomic physics0210 nano-technologyJournal of Applied Physics
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High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

010302 applied physicsFabricationMaterials sciencebusiness.industrydiodesSi doped02 engineering and technologyfabrication021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsPulsed laser depositiongallium oxideGallium oxideQuality (physics)wide bandgap0103 physical sciencesSapphire:NATURAL SCIENCES:Physics [Research Subject Categories]Optoelectronics0210 nano-technologybusinesspulsed laser depositionDiodephysica status solidi (b)
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Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition

2020

Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…

010302 applied physicsKelvin probe force microscopeMaterials sciencePassivationSiliconAnnealing (metallurgy)OxideAnalytical chemistrychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsAtomic layer depositionchemistry.chemical_compoundchemistry0103 physical sciencesElectrical and Electronic EngineeringThin film0210 nano-technologyUltraviolet photoelectron spectroscopyIEEE Journal of Photovoltaics
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Luminescence of divalent lanthanide doped BaBrI single crystal under synchrotron radiation excitations

2020

Abstract Luminescence excitation spectra of BaBrI single crystals doped by divalent lanthanide ions are studied using synchrotron radiation excitations from the MAX IV 1.5 GeV storage ring. The energy of the edge and the formation of core cation exciton as well as the energy threshold of the multiplications of electronic excitations is found. It was clearly established the energy transfer from intrinsic luminescence centers to Sm2+ and Eu2+ ions.

010302 applied physicsLanthanideNuclear and High Energy PhysicsMaterials scienceExcitonDopingSynchrotron radiation02 engineering and technologyScintillator021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsIonCondensed Matter::Materials Science0103 physical sciences0210 nano-technologyLuminescenceInstrumentationSingle crystalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

2006

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…

010302 applied physicsLanthanideSiliconProcess Chemistry and TechnologyInorganic chemistrychemistry.chemical_element02 engineering and technologySurfaces and InterfacesGeneral ChemistrySubstrate (electronics)021001 nanoscience & nanotechnology01 natural sciencesEvaporation (deposition)Amorphous solidAtomic layer depositionchemistry.chemical_compoundchemistryLanthanum oxide0103 physical sciencesLanthanum0210 nano-technologyChemical Vapor Deposition
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