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Normal Metal-Insulator-Superconductor Tunnel Junctions With Pulsed Laser Deposited Titanium Nitride as Superconductor
2021
Here we report the fabrication of normal metal – insulator – superconductor (NIS) tunnel junctions using superconducting titanium nitride grown by pulsed laser deposition (PLD). The films for NIS junction fabrication were deposited on two different substrates: silicon nitride film and magnesium oxide. TiN films were characterized by means of electrical transport measurements, and films with superconducting transition temperatures above the liquid helium boiling point were chosen for fabrication of NIS junctions. Tunnel junction devices were successfully fabricated using electron beam lithography and shadow evaporation techniques. The insulator layer formation was performed using two differe…
Vacuum deposited perovskite solar cells employing dopant-free triazatruxene as the hole transport material
2017
Abstract Planar perovskite solar cells using organic charge selective contacts were fabricated. In a vacuum deposited perovskite-based solar cell, dopant and additive free triazatruxene as the hole transport layer was introduced for device fabrication. High open-circuit voltage of 1090 mV was obtained using methylammonium lead iodide (Eg=1.55 eV) as light harvesting material, thus representing a loss of only 460 mV which is in close vicinity of mature silicon technology (400 mV). The devices showed a very competitive photovoltaic performance, monochromatic incident photon-to-electron conversion efficiency of 80% and the power conversion efficiencies in excess of 15% were measured with a neg…
Electrochemical Fabrication and Physicochemical Characterization of Metal/High-k Insulating Oxide/Polymer/Electrolyte Junctions
2014
Photoelectrochemical polymerization of poly(3,4-ethylenedioxythiophene), PEDOT, was successfully realized on anodic film grown to 50 V on magnetron sputtered Ti-6 atom % Si alloys. Scanning electron microscopy allowed us to evidence formation of compact and uniform polymer layers on the oxide surface. Photoelectrochemical and impedance measurements showed that photopolymerization allows one to grow PEDOT in its conducting state, while a strong cathodic polarization is necessary to bring the polymer in its p-type semiconducting state. Information on the optical and electrical properties of metal/oxide/polymer/electrolyte junctions proves that PEDOT has promising performance as an electrolyte…
Exfoliation of Alpha-Germanium: A Covalent Diamond-Like Structure
2021
2D materials have opened a new field in materials science with outstanding scientific and technological impact. A largely explored route for the preparation of 2D materials is the exfoliation of layered crystals with weak forces between their layers. However, its application to covalent crystals remains elusive. Herein, a further step is taken by introducing the exfoliation of germanium, a narrow-bandgap semiconductor presenting a 3D diamond-like structure with strong covalent bonds. Pure α-germanium is exfoliated following a simple one-step procedure assisted by wet ball-milling, allowing gram-scale fabrication of high-quality layers with large lateral dimensions and nanometer thicknesses.…
A novel method of nanocrystal fabrication based on laser ablation in liquid environment
2008
Abstract Metal nanoparticles can be prepared by a novel technique that consists of the laser ablation of a solid target immersed in a water solution of a metal salt. Silicon was chosen as the most adequate target to synthesize silver and gold nanoparticles from a water solution of either AgNO3 or HAuCl4. The influence of both the silver nitrate concentrations and the irradiation time of the Si target on the optical properties of the Au and Ag nanoparticles have been investigated. The crystalline nature of the metal nanoparticles has been determined by X-ray diffraction (XRD). Average size and particle size distribution have been measured by means of TEM. The absorbance spectra show the char…
Particle Detectors made of High Resistivity Czochralski Grown Silicon
2004
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Planar Array Technology for the Fabrication of Germanium X-Ray Microcalorimeters
2008
Several technologies are presently competing for measuring the temperature increase in cryogenic micro-calorimeters used as high resolution energy-dispersive X-ray detectors. Doped germanium, whose resistivity depends on temperature, is a promising material for this purpose, because of its comparatively low specific heat and the possibility of making wafers with high doping uniformity by neutron transmutation. Presently, Ge-based microcalorimeters are still micro-machined and manually assembled. Here we present a planar approach to the fabrication of 2-D arrays of microcalorimeters and show the preliminary technological results.
Self-assembled three-dimensional inverted photonic crystals on a photonic chip
2017
Three dimensional photonic crystals (PhCs) exhibiting a full photonic band gap have high potential in optical signal processing and detector applications. However, the challenges in the integration of the 3D PhCs into photonic circuits have so far hindered their exploitation in real devices. This article demonstrates the fabrication of 3D PhCs exploiting the capillary directed self-assembly (CDSA) of monodisperse colloidal silica spheres, their inversion to silicon shells, and integration with silicon waveguides. The measured transmission characteristics agree with numerical predictions and provide strong indication of a full photonic band gap in the inverted 3D photonic crystals at wavelen…
MOVPE growth of Ga 3D structures for fabrication of GaN materials
2004
Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metal…
Crystallization of silica opals onto patterned silicon wafer
2006
We report on fabrication of high quality opaline photonic crystals from large silica spheres, self-assembled in hydrophilic trenches of silicon wafers by using a drawing apparatus with a combination of stirring. The achievements here reported comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, a filling of the trenches up to the top, leading to a spatially uniform film thickness, particularly an absence of cracks within the size of the trenches, and finally a good three-dimensional order of the opal lattice even in trenches with a complex confined geometry, verified using optical measurements. The opal lattice was found to match the pattern…