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showing 10 items of 3539 documents
SPEEDAM 2010 Poster REC0616: An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
2010
A Geant4 simulation package for the sage spectrometer
2012
International audience; A comprehensive Geant4 simulation was built for the SAGE spectrometer. The simulation package includes the silicon and germanium detectors, the mechanical structure and the electromagnetic fields present in SAGE. This simulation can be used for making predictions through simulating experiments and for comparing simulated and experimental data to better understand the underlying physics.
Sub-wavelength imaging of light confinement and propagation in SOI based photonic crystal devices
2006
A light source is coupled into photonic crystal devices and a near field optical probe is used to observe the electromagnetic field propagation and distribution at a sub-wavelength scale. Bloch modes are clearly observed.
Modelling of phase boundaries for large industrial FZ silicon crystal growth with the needle-eye technique
2003
In order to facilitate the numerical calculations of the phase boundaries in large industrial floating zone silicon crystal growth with the needle-eye technique, the chain of improved mathematical models is developed. The phase boundaries are solved in a partly transient way and the modelling improvements cover the open melting front, the inner triple point and the free melt surface. The view factors model is applied for the radiative heat transfer. The electromagnetic field is calculated with account of a multiple-slit inductor.
Combined Effects of 50 Hz Electromagnetic Field and SiO2 Nanoparticles on Oxidative Stress in Plant’s Gametic Cells / Zemfrekvences (50 Hz) Elekromag…
2015
Abstract The paper presents the results of combined effects of an extremely low frequency electromagnetic field (50 Hz) (ELF EMF) and SiO2 nanoparticles on fluorescence of plant gametic cells (immature microspores). The data were recorded by a BD FACSJazz® cell sorter after cell irradiation by blue laser (488 nm). A significant difference of fluorescence was observed between gametic cells after 1 hour incubation in suspension of SiO2 nanoparticles and the control gametic cells. It was observed that fluorescence intensity of gametic cell was higher with ELF EMF treatment in comparison to control cells, but it was statistically significant only for cells treated with electromagnetic radiation…
Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)
2020
A High-Granularity Timing Detector (HGTD) is proposed based on the Low-Gain Avalanche Detector (LGAD) for the ATLAS experiment to satisfy the time resolution requirement for the up-coming High Luminosity at LHC (HL-LHC). We report on beam test results for two proto-types LGADs (BV60 and BV170) developed for the HGTD. Such modules were manufactured by the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences (CAS) collaborated with Novel Device Laboratory (NDL) of the Beijing Normal University. The beam tests were performed with 5 GeV electron beam at DESY. The timing performance of the LGADs was compared to a trigger counter consisting of a quartz bar coupled to a SiPM read…
Gigahertz Single-Electron Pumping Mediated by Parasitic States
2018
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achi…
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
2001
Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…
Measurement of drift mobilities in amorphous organic films using the Time of Flight method
2004
We apply the Time of Flight (TOF) technique to study carrier mobility in N, N’-diphenyl-N,N’-bis(3-methylphenyl) -1,1-biphenyl-4,4’-diamine (TPD) and tris(8-hydroxyquinolato) aluminium (Alq 3 ). These materials are two examples of, respectively, hole and electron transporting molecular materials. Measurements are performed in free air or under vacuum varying the experimental parameters such as laser pulse intensity and single shot irradiation. We observe a transition from dispersive to non dispersive transport changing the experimental conditions.
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …