Search results for "Indium"
showing 10 items of 177 documents
Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration
2014
Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of oth…
The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides
1996
Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic‐wave velocity along the crystallographic axis c. Julio.Pellicer@uv.es ; Chantal.Ferrer@uv.es ; Vicente.Munoz@uv.es
Formation and evolution of self-organized Au nanorings on indium-tin-oxide surface
2011
This work reports on the formation of Au nanoclusters and on their evolution in nanoring structures on indium-tin-oxide surface by sputtering deposition and annealing processes. The quantification of the characteristics of the nanorings (surface density, depth, height, and width) is performed by atomic force microscopy. The possibility to control these characteristics by tuning annealing temperature and time is demonstrated establishing relations which allow to set the process parameters to obtain nanostructures of desired morphological properties for various technological applications. © 2011 American Institute of Physics.
Pbca-Type In2O3: The High-Pressure Post-Corundum phase at Room Temperature.
2014
High-pressure powder X-ray diffraction and Raman scattering measurements in cubic bixbyite-type indium oxide (c-In2O3) have been performed at room temperature. On increasing pressure c-In2O3 undergoes a transition to the Rh2O3-II structure but on decreasing pressure Rh2O3-II-type In2O3 undergoes a transition to a previously unknown phase with Pbca space group which is isostructural to Rh2O3-III. On further decrease of pressure, we observed a phase transition to the metastable corundum-type In2O3 near room conditions. Recompression of the metastable corundum-type In2O3 at room temperature leads to a transition to the Rh2O3-III phase, thus showing that the Rh2O3-III phase is the post-corundum…
Spatial inhomogeneities and defect structures in CIGS and CIS materials: An ab-initio based Monte Carlo study
2011
The chalcopyrite semiconductors CuIn 1−x Ga x Se 2 (CIGS) and CuInSe 2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells.…
White Light-Emitting Electrochemical Cells Based on the Langmuir–Blodgett Technique
2014
Light-emitting electrochemical cells (LECs) showing a white emission have been prepared with Langmuir-Blodgett (LB) films of the metallosurfactant bis[2-(2,4-difluorophenyl)pyridine][2-(1-hexadecyl-1H-1,2,3-triazol-4-yl)pyridine]iridium(III) chloride (1), which work with an air-stable Al electrode. They were prepared by depositing a LB film of 1 on top of a layer of poly(N,N'-diphenyl-N,N'-bis(4-hexylphenyl)-[1,1'-biphenyl]-4,4'-diamine (pTPD) spin-coated on indium tin oxide (ITO). The white color of the electroluminescence of the device contrasts with the blue color of the photoluminescence of 1 in solution and within the LB films. Furthermore, the crystal structure of 1 is reported togeth…
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Temperature and impurity concentration effects on upconversion luminescence in LaInO3 doped with Er3+
2016
In this paper a novel method for synthesis of LaInO3:Er3+ is reported and upconversion luminescence properties of the synthesized material at different temperatures (9–300 K) are studied. The samples were prepared by co-precipitation and subsequent heat treatment of lanthanum, indium and erbium hydroxides. It is shown that the excitation at 980 nm leads to a strong green upconversion luminescence in the material. At the concentrations above 0.1 mol. % of Er3+ the energy transfer upconversion mechanism of the luminescence becomes evident. Further increase of Er3+ content in the material leads to higher red-to-green upconversion luminescence intensity ratio. The mechanisms responsible for the…
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.