Search results for "Indium"
showing 10 items of 177 documents
CCDC 1519796: Experimental Crystal Structure Determination
2017
Related Article: Yulia Yu. Enakieva, Marina V. Volostnykh, Sergey E. Nefedov, Gayane A. Kirakosyan, Yulia G. Gorbunova, Aslan Yu. Tsivadze, Alla G. Bessmertnykh-Lemeune, Christine Stern, Roger Guilard|2017|Inorg.Chem.|56|3055|doi:10.1021/acs.inorgchem.6b03160
CCDC 2095771: Experimental Crystal Structure Determination
2023
Related Article: Yan Guo, Chen Liang, Chengcheng C. Zhang, Jesús Ferrando‐Soria, Yu Gao, Jiahui H. Yang, Xiangyu Y. Liu, Emilio Pardo|2022|Chem.Asian J.|17|e202101220|doi:10.1002/asia.202101220
CCDC 1414955: Experimental Crystal Structure Determination
2015
Related Article: Petra Vasko, Virva Kinnunen, Jani O. Moilanen, Tracey L. Roemmele, René T. Boeré, Jari Konu, Heikki M. Tuononen|2015|Dalton Trans.|44|18247|doi:10.1039/C5DT02830B
CCDC 1420621: Experimental Crystal Structure Determination
2015
Related Article: Petra Vasko, Akseli Mansikkamäki, James C. Fettinger, Heikki M. Tuononen, Philip P. Power|2016|Polyhedron|103|164|doi:10.1016/j.poly.2015.09.052
Fabrication of CZTSe/CIGS Nanowire Arrays by One-Step Electrodeposition for Solar-Cell Application
2021
The paper reports some preliminary results concerning the manufacturing process of CuZnSnSe (CZTSe) and CuInGaSe (CIGS) nanowire arrays obtained by one-step electrodeposition for p-n junction fabrication. CZTSe nanowires were obtained through electrodeposition in a polycarbonate membrane by applying a rectangular pulsed current, while their morphology was optimized by appropriately setting the potential and the electrolyte composition. The electrochemical parameters, including pH and composition of the solution, were optimized to obtain a mechanically stable array of nanowires. The samples were characterized by scanning electron microscopy, Raman spectroscopy, and energy-dispersion spectros…
Indium-Gallium Segregation inCuInxGa1−xSe2: AnAb Initio–Based Monte Carlo Study
2010
Thin-film solar cells with ${\mathrm{CuIn}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Se}}_{2}$ (CIGS) absorber are still far below their efficiency limit, although lab cells already reach 20.1%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which contributes to the observed low efficiency of Ga-rich CIGS solar cells.
Push‐Pull Design of Bis(tridentate) Ruthenium(II) Polypyridine Chromophores as Deep Red Light Emitters in Light‐Emitting Electrochemical Cells
2013
Light-emitting electrochemical cells (LECs) with a simple device structure were prepared by using heteroleptic bis(tridentate) ruthenium(II) complexes [1](PF6)(2)-[3](PF6)(2) as emitters. The push-pull substitution shifts the emission energy to low energy, into the NIR region. The devices emit deep red light up to a maximum emission wavelength of 755 nm [CIE (International Commission on Illumination) coordinates: x = 0.731, y = 0.269 for [3](PF6)(2)], which, to the best of our knowledge, is the lowest emission energy for LECs containing bis(tridentate) ruthenium(II) complexes. A device structure of ITO/PEDOT:PSS/ruthenium(II) complex/Ag was used, and the thickness of the emitting layer was …
Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
2004
The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.
Proton Dynamics in In:BaZrO3: Insights on the Atomic and Electronic Structure from X-ray Absorption Spectroscopy
2009
The local structure of Ba2+, Zr4+, and In3+ in In:BaZrO3 is investigated with EXAFS for samples having 0 to 75% In3+ content. It is found that indium can be inserted in any ratio in the host matrix oxide and that the oxygen coordination shell displays an In-O distance very similar to the Zr-O length. In the Zr-rich compositions, there is a preferred dopant-vacancy association that, however, does not give rise to dopant-proton interaction in the hydrated samples. The tendency of Ba2+ to be attracted toward the dopant site is attributed to the electrostatic interaction with the dopant and to the structural rearrangement around the In3+ site. Third cumulant analysis at high temperatures (up to…
Electroplated Indium Bumps as Thermal and Electrical Connections of NTD-Ge Sensors for the Fabrication of Microcalorimeter Arrays
2012
We are developing a method to build arrays of Ge-based microcalorimeters for soft X-rays detection using micro-photolithographic techniques. A key element of the process is the electrical and thermal connection between the germanium sensors and the interconnection electrical tracks, that lay on a substrate acting as mechanical support and thermal sink. The geometry of the sensors, that have a square base truncated pyramid shape, makes feasible a connection through indium soldering. We describe a technique, based on microlithography and electroplating, adopted to grow indium bumps of a few tens of square microns of area and several microns high on top of the contact pads patterned on the sub…