Search results for "Instrumentation"
showing 10 items of 4914 documents
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Neutron yields from thick 12C and 9Be targets irradiated by 50 and 65 MeV deuterons
2001
Abstract Absolute intensities, angular distributions and energy spectra of neutrons emitted from thick 12 C and 9 Be targets irradiated with 50 and 65 MeV deuterons, respectively, have been measured. The neutron spectra were measured by time-of-flight (TOF) technique. The detectors provided continuous coverage from 0° to 60° where a significant angular dependence of emitted neutrons was found. The yield of 0.109(10) neutrons/deuteron from the 9 Be target is a factor of two higher than that from the 12 C target, 0.056(6) neutrons/deuteron. The hardness parameters of the neutron spectra are calculated for the radiation damage studies of the silicon devices.
A novel Si strip array to investigate reaction and decay mechanisms
2008
Abstract The performance of a novel set-up of double-sided silicon micro-strip detectors (DSSD) developed for the GSI-R3B project (reaction studies with relativistic radioactive beams) is presented. The set-up was used in an experiment aimed at measuring the two-proton decay of 19 Mg. This experiment required to record simultaneously protons and the residual nuclei with good position and energy resolution. Our experimental results show that both protons and heavy ions ranging from Z = 2 up to Z = 12 can be identified with good signal-to-noise ratio and high energy and spatial resolution. This allowed to reconstruct 2- and 3-particle vertices with high precision, opening the possibility to…
Cryogenic operation of silicon detectors
2000
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
Particle identification with time-of-flight and pulse-shape discrimination in neutron-transmutation-doped silicon detectors
2009
Abstract A method for the identification of energetic charged particles has been investigated based on the employment of pulse-shape discrimination (PSD) in a silicon detector in addition to conventional time-of-flight (ToF) techniques. The method makes use of the fact that, at fixed energy, the particle's velocity, or ToF, is a measure of the particle's mass A while the time structure of the current pulse in a silicon energy detector, used as the ToF stop, permits identification of nuclear charges Z. In the measurements presented here, ToF and PSD methods were applied simultaneously. We used micro-channel plate (MCP) detectors as fast time pick-offs and surface-barrier (SB) n-type Si detec…
Experience with the ALEPH silicon vertex detector
1992
Abstract The ALEPH experiment [1] at LEP is equipped with a vertex detector [2] using two layers of double-sided silicon strip detectors. These detectors allow a real two-dimensional measurement of charged particle tracks. The present (1991) detector has the inner layer at a radius of 6.5 cm and the outer layer at 11.5 cm. The theta angle coverage is ±33° for the inner layer and ±50° for the outer layer. The inner layer is made out of 9 faces with four silicon detectors each, the outer layer has 15 such faces. We use silicon detectors of 5 × 5 cm 2 and 300 μm thickness. The readout pitch is 100 μm at both sides and using capacitive charge division a resolution in the order of 10 μm can be a…
Implantation-decay station for low-energy proton measurements
2013
Abstract We have built an implantation-decay station for β - delayed proton and α decay studies at the focal plane of the Momentum Achromat Recoil Spectrometer (MARS) at the Cyclotron Institute of Texas A&M University. Energetic secondary beams with a small momentum spread are stopped in a controlled manner into a very thin silicon strip detector. In addition, high-purity germanium detectors are installed for γ ray detection. Here we give a description of the setup and the observed performance down to E p ≈ 200 keV using implanted 23 Al and 31 Cl sources.
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
The GALILEO γ-ray array at the Legnaro National Laboratories
2021
Abstract GALILEO, a new 4 π high-resolution γ -detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital read-out chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy γ -ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.
Silicon detector for a Compton camera in nuclear medical imaging
2002
Electronically collimated gamma ca\-me\-ras based on Com\-pton scattering in silicon pad sensors may improve imaging in nuclear medicine and bio-medical research. The work described here concentrates on the silicon pad detector developed for a prototype Compton camera. The silicon pad sensors are read out using low noise VLSI CMOS chips and novel fast triggering chips. Depending on the application a light weight and dense packaging of sensors and its readout electronics on a hybrid is required. We describe the silicon pad sensor and their readout with the newly designed hybrid. %The silicon detector of a Compton camera %may contain up to $10^5$~analogue channels requiring %a fast and low co…