Search results for "Interfaces"
showing 10 items of 1258 documents
Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces
2015
Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of …
Graphene‐SiO2 Interaction from Composites to Doping
2019
An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.
MgO surface microstructure and crystalline coherence of Co/Pt superlattices
1998
We report the growth of Co/Pt(111) superlattices sputtered onto MgO(111) substrates of different surface quality. Long-range structural coherence in the Pt-seed layers and the superlattices could only be obtained on specially re-polished substrates. In seed layers and superlattices grown on miscut re-polished substrates suppression of abc versus acb stacking was observed.
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
2020
Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role of indium incorporation and Si doping levels on the charge state of extended defects including threading dislocations, V defects and misfit dislocations. Surface potential maps reveal that these defects are associated with a different local work function and thus could remarkably alter electron-hole recombination mechanisms of InxGa1-xN/GaN layers locally. Surface photovoltage spectra clearly demonstrate the role of misfit disloca…
Interfacial energy effects within the framework of strain gradient plasticity
2009
AbstractIn the framework of strain gradient plasticity, a solid body with boundary surface playing the role of a dissipative boundary layer endowed with surface tension and surface energy, is addressed. Using the so-called residual-based gradient plasticity theory, the state equations and the higher order boundary conditions are derived quite naturally for both the bulk material and the boundary layer. A phenomenological constitutive model is envisioned, in which the bulk material and the boundary layer obey (rate independent associative) coupled plasticity evolution laws, with kinematic hardening laws of differential nature for the bulk material, but of nondifferential nature for the layer…
Cutting performance and indentation behaviour of diamond films on Co-cemented tungsten carbide
2000
Abstract Diamond films were grown by Hot Filament Chemical Vapour Deposition (HFCVD) on differently pretreated ISO-grade K10 cemented carbide (WC-5.8 wt.%Co) cutting inserts. Etching with diluted HNO3 and surface roughening by Murakami's reagent were used as substrate pretreatments. The adhesion of the films was evaluated by indentation tests. In order to obtain a reliable estimation of the adhesion by the slope of the crack radius–indentation load curves, a careful SEM measurement of the crack lengths was performed. Bare and diamond-coated cutting inserts were used for turning tests of Al2O3-reinforced aluminum alloy. The adhesion levels obtained from the indentation curves correlated well…
Selective Synthesis of Monodisperse CoO Nanooctahedra as Catalysts for Electrochemical Water Oxidation
2020
Thermal decomposition is a promising route for the synthesis of metal oxide nanoparticles because size and morphology can be tuned by minute control of the reaction variables. We synthesized CoO nanooctahedra with diameters of ∼48 nm and a narrow size distribution. Full control over nanoparticle size and morphology could be obtained by controlling the reaction time, surfactant ratio, and reactant concentrations. We show that the particle size does not increase monotonically with time or surfactant concentration but passes through minima or maxima. We unravel the critical role of the surfactants in nucleation and growth and rationalize the observed experimental trends in accordance with simu…
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
On the possibility of synthesizing multilayered coatings in the (Ti,Al)N system by RGPP: A microstructural study
2019
International audience; Radiofrequency magnetron sputtering combined with reactive gas pulsing process was used to synthesize two titanium aluminum nitride multilayer films using a periodically controlled nitrogen flow rate changing from 0.4 to 1 sccm (sample S04-1) and from 0 to 1 sccm (sample S0-1). A metallic TiAl buffer layer was deposited on the etched substrates before the deposition to enhance their adhesion. The films were characterized using mainly transmission electron microscopy and electron diffraction. The role of the crystallinity of the buffer TiAl metallic layer deposited before gas introduction on the growth orientations is emphasized. It is shown that the formation of a mu…
Changes in structure and conduction type upon addition of Ir to ZnO thin films
2017
Zn-Ir-O (Zn/Ir ≈ 1/1) thin films have been reported to be a potential p-type TCO material. It is, however, unknown whether it is possible to achieve p-type conductivity at low Ir content, and how the type and the magnitude of conductivity are affected by the film structure. To investigate the changes in properties taking place at low and moderate Ir content, this study focuses on the structure, electrical and optical properties of ZnO:Ir films with iridium concentration varying between 0.0 and 16.4 at.%. ZnO:Ir thin films were deposited on glass, Si, and Ti substrates by DC reactive magnetron co-sputtering at room temperature. Low Ir content (up to 5.1 at.%) films contain both a nano-crysta…