Search results for "Intron"
showing 10 items of 420 documents
Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters
2019
We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.
Impact of pump wavelength on terahertz emission of a cavity-enhanced spintronic trilayer
2018
We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic Fe layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially at for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of of up to two in field.
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
Optical and electronic properties of 2H−MoS2 under pressure: Revealing the spin-polarized nature of bulk electronic bands
2018
Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk $2\mathrm{H}\text{\ensuremath{-}}\mathrm{Mo}{\mathrm{S}}_{2}$ hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of $A$ and $B$ excitons under high pressure, by means of absorption measurements and density-functi…
Large enhancement of spin pumping due to the surface bound states in normal metal/superconductor structures
2020
We show that the spin pumping from ferromagnetic insulator into the adjacent metallic spin sink can be strongly stimulated by the superconducting correlations. The key physical mechanism responsible for this effect is the presence of Andreev bound states at the ferromagnetic insulator/superconductor interface. We consider the minimal model when these states appear because of the suppressed pairing constant within the interfacial normal layer. For thin normal layers we obtain a strongly peaked temperature dependence of the Gilbert damping coefficient which has been recently observed in such systems. For thicker normal layers the Gilbert damping monotonically increases down to the temperature…
Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO
2021
We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Neel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate t…
The half-metallic ferromagnet
2007
Abstract Electronic structure calculation were used to predict a new material for spintronic applications. Co 2 Mn 0.5 Fe 0.5 Si is one example which is stable against on-site correlation and disorder effects due to the position of the Fermi energy in the middle of the minority band gap. Experimentally the sample were made exhibiting L 2 1 structure and a high magnetic order.
Differentiation of Candida parapsilosis, C. orthopsilosis, and C. metapsilosis by specific PCR amplification of the RPS0 intron
2011
Although Candida parapsilosis is the most prevalent among the 3 species of the *psilosis group, studies applying DNA-based diagnostic techniques with isolates previously identified as C. parapsilosis have revealed that both C. orthopsilosis and C. metapsilosis account for 0-10% of all these isolates, depending on the geographical area. Differences in the degrees of antifungal susceptibility and virulence have been found, so a more precise identification is required. In a first approach, we reidentified 38 randomly chosen clinical isolates, previously identified as C. parapsilosis, using the RPO2 (CA2) RAPD marker. Among them, we reclassified 4 as C. metapsilosis and 5 as C. orthopsilosis. W…
The mitochondrial genome of fission yeast: inability of all introns to splice autocatalytically, and construction and characterization of an intronle…
1991
In this paper we report the inability of four group I introns in the gene encoding subunit I of cytochrome c oxidase (cox1) and the group II intron in the apocytochrome b gene (cob) to splice autocatalytically. Furthermore we present the characterization of the first cox1 intron in the mutator strain anar-14 and the construction and characterization of strains with intronless mitochondrial genomes. We provide evidence that removal of introns at the DNA level (termed DNA splicing) is dependent on an active RNA maturase. Finally we demonstrate that the absence of introns does not abolish homologous mitochondrial recombination.
All-atom simulations disentangle the functional dynamics underlying gene maturation in the intron lariat spliceosome
2018
The spliceosome (SPL) is a majestic macromolecular machinery composed of five small nuclear RNAs and hundreds of proteins. SPL removes noncoding introns from precursor messenger RNAs (pre-mRNAs) and ligates coding exons, giving rise to functional mRNAs. Building on the first SPL structure solved at near–atomic-level resolution, here we elucidate the functional dynamics of the intron lariat spliceosome (ILS) complex through multi-microsecond-long molecular-dynamics simulations of ∼1,000,000 atoms models. The ILS essential dynamics unveils (i) the leading role of the Spp42 protein, which heads the gene maturation by tuning the motions of distinct SPL components, and (ii) the critical particip…