Search results for "Iode"
showing 10 items of 1284 documents
Hard cap espresso extraction and liquid chromatography determination of bioactive compounds in vegetables and spices
2017
Abstract A new analytical procedure, based on liquid chromatography with diode array and fluorescence detection, has been proposed for the determination of bioactive compounds in vegetables and spices after hard cap espresso extraction. This novel extraction system has been tested for the determination of capsaicin and dihydrocapsaicin from fresh chilli and sweet pepper, piperine from ground pepper, curcumin from turmeric and curry, and myristicin from nutmeg. Extraction efficiency was evaluated by using acetonitrile:water and ethanol:water mixtures. The proposed method allows the extraction of samples with 100 mL of 60% (v/v) ethanol in water. The obtained limits of quantification for the …
Design and analysis of non-linear circuit with tunnel diode for hybrid control systems
2018
Electric circuits with tunnel diode's represent a classical example of dynamic systems with nonlinearities, which feature piecewise negative damping and multiple equilibria and, as consequence, nontrivial trajectories in the state-space. In this paper, we describe the experimental design and analysis of an electrical circuit, including a tunnel diode, allowing for a storage behavior with bistable output voltage states - low and high. The system is modeled for simulation and an experimental setup is designed and implemented in order to run a formal verification on different tools, applying a variety of hybrid control methods. The nonlinear diode's characteristic curve is experimentally deter…
The Use of Two-Diode Substitute Model in Predicting the Efficiency of PV Conversion in Low Solar Conditions
2017
Abstract The article presents theoretical foundations of a two-diode equivalent model of a photovoltaic cell/module (PV), together with calculation procedures. A physical interpretation of individual components of an equivalent model was presented. Its practical application in predicting efficiency of operation of various PV cells and modules in low insulation conditions was demonstrated. The obtained predictions were verified with the actual results of their operation in open space (outdoor). The practical suitability of the “model” in early detection of ageing phenomena, such as, for example, absorber degradation taking place in PV modules, was demonstrated. The article was prepared on th…
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Experimental evidence on photo-assisted O− ion production from Al2O3 cathode in cesium sputter negative ion source
2020
The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from these ion sources, therefore opening the door for laser-assisted enhancement of the negative ion yield. We have tested this hypothesis by measuring the effect of various pulsed diode lasers on the O − beam current produced from Al 2O 3 cathode of a cesium sputter ion source. It is expected that the ion pair production of O − requires populating the 5d electronic states of neutral cesium, thus implying that the process should be provoked only with specific …
Rock-salt CdZnO as a transparent conductive oxide
2018
Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to…
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL
2012
Four pulsed-laser single-event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems. The optical wavelength and the focused spot size are the primary factors influencing the resultant charge density profile. In the large-area photodiode the transients can be distorted by high charge-injection densities that occur for tightly focused, higher energy optical pulses. When the incident laser-pulse energies are corrected for reflection losses and photon efficiency, with collection de…