Search results for "Iode"

Effect of driving method on the degradation of organic light emitting diodes

2003

Abstract Lifetime testing results are reported for organic light emitting diodes (OLEDs) having the structure ITO (anode)/ N , N ′-diphenyl- N , N ′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (AlQ)/Al (cathode) and operated using dc and pulsed waveforms for comparison. In ambient atmosphere non-encapsulated devices show a lifetime of about 70 h in pulsed operation at an initial luminance of 500 cd/m 2 , almost four times longer than in dc operation. A fast initial decay of luminance is observed for dc operation. It is most probably due to a combination of Joule heating and mobile ionic impurities migration within the OLED structure under the conti…

Oxygen-Induced Blinking of Single CdSe Nanocrystals

2001

Clinical measurements analysis of multi-spectral photoplethysmograph biosensors

2014

The developed portable multi-spectral photoplethysmograph (MS-PPG) optical biosensor device, intended for analysis of peripheral blood volume pulsations at different vascular depths, has been clinically verified. Multi-spectral monitoring was performed by means of a four – wavelengths (454 nm, 519 nm, 632 nm and 888 nm) light emitted diodes and photodiode with multi-channel signal output processing. Two such sensors can be operated in parallel and imposed on the patient’s skin. The clinical measurements confirmed ability to detect PPG signals at four wavelengths simultaneously and to record temporal differences in the signal shapes (corresponding to different penetration depths) in normal a…

Clinical measurements with multi-spectral photoplethysmography sensors

2012

A portable multi-spectral photoplethysmography device has been used for studies of 40 subjects. Multi-spectral monitoring was performed by means of a four - wavelengths (465 nm, 530 nm, 630 nm and 870 nm) light emitted diodes (LED) and a single photodiode with multi-channel signal output processing. The proposed methodology and potential clinical applications are discussed.

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

2008

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.

Diode laser reliability in dynamic laser speckle application: Stability and signal to noise ratio

2018

Abstract The biospeckle, or dynamic laser speckle, is used as a potential tool to monitor activity in many biological and non-biological materials from agriculture to medicine, and it is usually based on the use of He-Ne and diode lasers, the latter of which has great potential to be embedded in portable equipment. Some queries about the stability of the diode laser were raised, such as the real influence of the mode hopping phenomenon as a drawback in solid-state devices in comparison to the well-known He-Ne lasers, and thus we decided to test it . In addition, we present an alternative way to enhance the stability and the signal-to-noise ratio of the information using a relative index rat…

Multilayer (Al,Ga)N Structures for Solar-Blind Detection

2004

We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…

High Temperature SiC Blocking Diodes for Solar Array

2009

This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170°C to 270°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward …

Broadband Fabry–Pérot Resonator From Zerodur for Laser Stabilisation Below 1KHZ Linewidth With < 100 HZ/S Drift and Reduced Sensitivity to Vibrati…

2015

Abstract Here we demonstrate the results of creating a two-mirror Fabry-Pérot resonator (FPR) that allows achieving the spectral width of a stabilised laser line below 1 kHz. It had low expansion Zerodur spacer and broadband high reflectance mirrors (99.85% in the range of 630 to 1140 nm). FPR was vertically mid-plane mounted for reduced sensitivity to vibrations and included in two shields inside a vacuum chamber to lower temperature fluctuations. Peltier element was used for temperature stabilisation at zero-expansion temperature. Pound-Drever-Hall (PDH) technique was applied. The signal from FPR was compared to ultra-stable signal (of about 1 Hz linewidth) to form a beat note signal. For…

Schottky barrier height tuning by Hybrid organic-inorganic multilayers

2014

ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…