Search results for "LIC"
showing 10 items of 51177 documents
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…
Laser Ultrasonics Inspection for Defect Evaluation on Train Wheel
2019
Abstract Passengers’ safety and in-service life of wheelset axles play an important role in railway vehicles. For this reason, periodic inspections are necessary. Among non-destructive techniques, ultrasonic ones are widely applied in this field. The main disadvantage of conventional ultrasonic techniques is that the overall inspection of wheels requires the train to be put out-of-service and disassembly each part, which is time-consuming and expensive. In this paper, a non-conventional non-contact laser ultrasonic inspection for train wheels is proposed. The proposed method uses a laser interferometer to receive the ultrasonic wave without contact. The receiving system allows choosing the …
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapo…
2019
Abstract We have analysed the growth, morphological and structural characterization of Cd1-xZnxO thin films grown on r-sapphire substrates by atmospheric pressure metal organic chemical vapour deposition, mainly focusing on the Cd-rich rock-salt phase for its promising optical and technological applications. The evolution of the surface morphology and crystalline properties as a function of Zn content has been studied by means of high resolution x-ray diffraction and electron microscopy techniques. Monocrystalline (002) single-phase cubic films were obtained with Zn contents up to 10.4%, and with a low density of dislocations as a consequence of the optimized crystal growth process. Particu…
New low-temperature phosphate glasses as a host for Europium Ions
2021
Abstract Artificial lightining, especially that of light emitting diodes, and telecommunications are penetrating every part of human lives daily. Different compositions phosphate glasses were suggested as a suitable host material for Eu3+ ions. Here rare earth metal ions act as luminescent centers also perturbing the bond order of phosphate glass network comprised of (PO4)3−, [−(O)PO3]2−, [−(O)2PO2]−, [−(O)3PO] structural units, which is indicated by Raman spectroscopy, confirming successful integration of aforementioned ions into the glass material. Glasses doped with Eu3+ ions show their typical photoluminescence spectra in low symmetry environment, consisting of the highest intensity 5D0…
A multilayer model for self-propagating high-temperature synthesis of inter-metallic compounds
2007
International audience; Self-propagating high-temperature synthesis of intermetallic compounds is of wide interest. We consider reactions in a binary system in which the rise and fall of the temperature during the reaction is such that one of the reacting metals melts but not the other. For such a system, using the phase diagram of the binary system, we present a general theory that describes the reaction taking place in a single solid particle of one component surrounded by the melt of the second component. The theory gives us a set of kinetic equations that describe the propagation of the phase interfaces in the solid particle and the change in composition of the melt that surrounds it. I…
An anomalous wave formation at the Al/Cu interface during magnetic pulse welding
2020
This paper reports an anomalous wave formation at an Al/Cu bimetallic interface produced by magnetic pulse welding. The mechanism of the anomalous wave formation is investigated using both metallurgical characterization and the interface kinematics. It reveals that the anomalous wave is formed with the combination of the intermediate zone and the interdiffusion zone with a thickness of 70 nm, wherein the intermediate zone is caused by the local melting due to the high shear instability, and the interdiffusion zone is formed below the melting point of aluminum combined with ultrahigh heating and cooling rates of about 10^13 °C s^−1. A multiphysics simulation of impact welding has been perfor…
Melting temperature prediction by thermoelastic instability: An ab initio modelling, for periclase (MgO)
2021
Abstract Melting temperature (TM) is a crucial physical property of solids and plays an important role for the characterization of materials, allowing us to understand their behavior at non-ambient conditions. The present investigation aims i) to provide a physically sound basis to the estimation of TM through a “critical temperature” (TC), which signals the onset of thermodynamic instability due to a change of the isothermal bulk modulus from positive to negative at a given PC-VC-TC point, such that (∂P/∂V)VC,TC = -(∂2F/∂V2) VC,TC = 0; ii) to discuss the case of periclase (MgO), for which accurate melting temperature observations as a function of pressure are available. Using first princip…
Performance evaluation and stability of silicide-based thermoelectric modules
2020
Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…