Search results for "Light-emitting diode"

showing 10 items of 111 documents

Efficient Perovskite Light-Emitting Diodes: Effect of Composition, Morphology, and Transport Layers

2018

Organic-inorganic metal halide perovskites are emerging as novel materials for light-emitting applications due to their high color purity, band gap tunability, straightforward synthesis, and inexpensive precursors. In this work, we improve the performance of three-dimensional perovskite light-emitting diodes (PeLEDs) by tuning the emissive layer composition and thickness and by using small-molecule transport layers. Additionally, we correlate PeLED efficiencies to the perovskite structure and morphology. The results show that the PeLEDs containing perovskites with an excess of methylammonium bromide (MABr) to lead bromide (PbBr2) in a 2:1 ratio and a layer thickness of 80 nm have the highes…

Materials scienceBand gapHOL - HolstHalide02 engineering and technologyPerovskite010402 general chemistry01 natural scienceslaw.inventionTransport layerslawLight-emitting diodeSurface roughnessGeneral Materials SciencePerovskite (structure)TS - Technical Sciencesbusiness.industryStoichiometric perovskite021001 nanoscience & nanotechnology0104 chemical sciencesNano TechnologyOptoelectronicsQuantum efficiencyCrystallite0210 nano-technologybusinessLayer (electronics)High efficiencyLight-emitting diodeACS Applied Materials & Interfaces
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Hybrid organic-inorganic light emitting diodes: effect of the metal oxide

2010

Hybrid organic-inorganic light emitting diodes (HyLEDs), employing metal oxides as the electron injecting contacts, are interesting as an alternative to OLEDs. Until recently, the metal oxide of choice was either titanium dioxide or zinc oxide. In this work two wide bandgap metal oxides, HfO2 and MgO, are employed as electron injecting layer in HyLEDs. It is demonstrated that both the current density and the luminance values obtained are directly related to the barriers for electron injection (from the ITO to the metal oxide) and for hole transfer to the same metal oxide, outlining a new design rule for the optimization of HyLEDs. Record device efficacies (3.3 cd/A, >10000 cd/m2) using the …

Materials scienceBand gapOxidechemistry.chemical_element02 engineering and technologyZinc01 natural sciences7. Clean energylaw.inventionMetalchemistry.chemical_compoundlaw0103 physical sciencesMaterials ChemistryOLED010302 applied physicsbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologychemistryvisual_artTitanium dioxidevisual_art.visual_art_mediumOptoelectronics0210 nano-technologybusinessCurrent densityLight-emitting diodeJournal of Materials Chemistry
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Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

2007

The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…

Materials scienceCarrier transportConducting polymersGeneral Physics and AstronomyOrganic light emitting diodesElectroluminescencelaw.inventionCurrent density:FÍSICA [UNESCO]lawPhenyleneOLEDSpontaneous emissionMinority carriersbusiness.industryUNESCO::FÍSICABiasingLight emitting diodesElectroluminescenceBias voltageElectron-hole recombinationOptoelectronicsElectron trapsbusinessConducting polymers ; Organic light emitting diodes ; Electron-hole recombination ; Electroluminescence ; Minority carriers ; Electron traps ; Current densityCurrent densityOrder of magnitudeLight-emitting diode
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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Materials scienceComputer Networks and CommunicationsBand gapgrowthlcsh:TK7800-836002 engineering and technologyfabricationElectroluminescence01 natural sciencesSettore ING-INF/01 - Elettronicaganlaw.inventionelectroluminescencelawleds0103 physical sciencesmorphologyzno/gan heterojunction ledsSpontaneous emissionElectrical and Electronic Engineeringepitaxial p-gan layers010302 applied physicsZnO nanorodbusiness.industryzno nanorodszno/gan heterostructurelcsh:Electronicsepitaxial p-GaN layerHeterojunctiondependence021001 nanoscience & nanotechnologyoptical-propertieschemical bath depositionSemiconductorHardware and ArchitectureControl and Systems EngineeringZnO/GaN heterojunction LEDSignal ProcessingznoOptoelectronicsNanorod0210 nano-technologybusinessnanorodsChemical bath depositionLight-emitting diode
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Design and realization of a portable multichannel continuous wave fNIRS

2014

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…

Materials scienceDetectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaSilicon PhotoMultiplierlaw.inventionSwitching timeembedded systemMicrocontrollerSilicon photomultiplierlawElectronic engineeringFunctional Near Infrared SpectroscopyFunctional near-infrared spectroscopyContinuous wavephotodetectorRealization (systems)Light-emitting diode2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Ionic liquid modified zinc oxide injection layer for inverted organic light-emitting diodes

2013

Abstract We have demonstrated a novel approach for fabricating efficient hybrid organic–inorganic light emitting diodes (HyLEDs) by introducing dopants into solutions processable metal oxides as an interfacial layer. The doped ZnO is prepared by adding ionic liquid (IL) to a precursor solution for the ZnO. In this way a heavily doped ZnO:ILs cathode was obtained that enhances the electron injection properties and assures a good wetting of the organic active materials.

Materials scienceDopantbusiness.industryInorganic chemistryDopingGeneral ChemistryElectroluminescenceCondensed Matter PhysicsCathodeElectronic Optical and Magnetic Materialslaw.inventionBiomaterialschemistry.chemical_compoundchemistrylawIonic liquidMaterials ChemistryOLEDOptoelectronicsWettingElectrical and Electronic EngineeringbusinessLight-emitting diodeOrganic Electronics
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Large area perovskite light-emitting diodes by gas-assisted crystallization:

2019

Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…

Materials scienceFabricationBand gapSlot-die coatings02 engineering and technologySubstrate (electronics)Large area devicesengineering.material010402 general chemistry01 natural sciencesLuminancelaw.inventionCoatinglawQuenchingMaterials ChemistryMaterialsDiodePerovskite (structure)Industrial Innovationbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyPerovskite light emitting diodes0104 chemical sciencesLuminanceManufacturing techniquesHalide perovskitesengineeringOptoelectronics0210 nano-technologybusinessLight-emitting diode
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Thin Film Metal Oxides for Displays and Other Optoelectronic Applications

2020

Thin films of metal oxides have been extensively studied for various applications because of their durability, lower cost and lower toxicity, excellent chemical, magnetic, electrical and optical properties. A fusion of electrical and optical properties led to the growth of optoelectronic devices for a variety of applications including displays, light-emitting diodes, photovoltaic cells, photodetectors, optical storage, medicine, and so on. Optoelectronic devices have revolutionized our daily lives with their potentials in various aspects. An extensive research on materials for these devices has to be credited for the improvement in their performance over the years. Several metal oxide thin …

Materials scienceFabricationbusiness.industryOxideOptical storagelaw.inventionchemistry.chemical_compoundchemistryThin-film transistorFlexible displaylawOptoelectronicsThin filmbusinessDiodeLight-emitting diode
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Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer

2015

Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.

Materials scienceFabricationbusiness.industrychemistry.chemical_elementGallium nitrideHeterojunctionZincSettore ING-INF/01 - ElettronicaZinc oxide nanorods Nanofabrication Characterization p-GaN hydrothermal growth seed layerlaw.inventionchemistry.chemical_compoundNanolithographychemistrylawOptoelectronicsNanorodbusinessLayer (electronics)Light-emitting diode
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White hybrid organic-inorganic light-emitting diode using ZnO as the air-stable cathode

2009

An efficient white light emitting hybrid organic−inorganic device utilizing air-stable metal oxides as anode and cathode and a polyfluorene mixed with a phosphorescent iridium complex as the emitting material is presented.

Materials scienceGeneral Chemical Engineeringchemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciences7. Clean energylaw.inventionMetalPolyfluorenechemistry.chemical_compoundlawOrganic inorganicMaterials ChemistryIridiumbusiness.industryGeneral Chemistry021001 nanoscience & nanotechnologyCathode0104 chemical sciencesAnodechemistryvisual_artvisual_art.visual_art_mediumOptoelectronics0210 nano-technologybusinessPhosphorescenceLight-emitting diodeChemistry of Materials
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