Search results for "MAGNETORESISTANCE"

Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology

2014

In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…

Synthesis and characterization of highly ordered cobalt-magnetite nanocable arrays.

2006

Magnetically tunable, high-density arrays of coaxial nanocables within anodic aluminum oxide (AAO) membranes have been synthesized. The nanocables consist of magnetite nanowires surrounded by cobalt nanotube sheaths and cobalt nanowires surrounded by magnetite nanotube sheaths. These materials are a combination of separate hard (Co) and soft (Fe3O4) magnetic materials in a single nanocable structure. The combination of two or more magnetic materials in such a radial structure is seen as a very powerful tool for the future fabrication of magnetoresistive, spin-valve and ultrafast spin-injection devices with nonplanar geometries. The nanocable arrays were prepared using a supercritical-fluid …

Non-Local Transport in a Multi-Wall Carbon Nanotube

2001

Non-local electric transport phenomena were observed for a multi-wall carbon nanotube. The magnetic field dependence of non-local resistance was out of phase with respect to the conventional four-probe resistance, which could be explained in terms of the Landauer-Buttiker formula. Our observations indicate that the phase coherence length of multi-wall carbon nanotube exceeds the voltage probe length of about 1.1 µm at the measured temperatures.

Anisotropies and Intensity Saturation of Gray-Tracking in KTiOPO/sub 4/

2005

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO 3

2019

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO3(1 1 0) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO3/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic fields, suggesting that field-induced canting of …

Hybrid magnetic materials based on layered double hydroxides: from the chemistry towards the applications

2014

Layered double hydroxides (LDHs) are the leitmotiv of this dissertation. Contradicting the assertion that “any past was better”, LDHs have been continuously revisited from the middle of the twentieth century, and represent an excellent example of the never-ending beauty of Chemistry. New synthetic perspectives are giving a new impetus to LDH chemistry, which among hybrid materials, are finding their heyday. This is resulting in novel materials and also paving the way for new fundamental and practical insights. This dissertation is focused on magnetic LDHs, and for the sake of clarity it is organized in three main parts: we will move from basic synthetic and physical aspects of LDHs, through…

Giant magnetoresistance in semiconducting DyNiBi

2008

Abstract The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal–insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

Antiferromagnetic order competing with topological state in CexBi2−xTe3

2015

The topological surface states in three-dimensional topological insulators are easily tuned by chemical doping, especially by magnetic impurities. We prepared single crystals of CexBi2−xTe3 with various x (=0.04, 0.06, 0.08, 0.10, and 0.12). The obtained crystals were characterized by X-ray diffraction and scanning electron microscopy. The magnetic susceptibility data revealed that the Ce atoms are well substituted for Bi into Bi2Te3. From the Curie-Weiss fits, we observed that the effective magnetic moments μeff are close to 2.54 μB for free Ce ion, and the paramagnetic Curie-Weiss temperatures θp are negatively increased from 2.87 K to −59.3 K with increasing x. The magnetization data cle…

Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts

2013

We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect. DOI: 10.1103/PhysRevLett.110.067203

Emergence of the stripe-domain phase in patterned permalloy films

2016

The occurrence of stripe domains in ferromagnetic Permalloy (Py=Fe$_{20}$Ni$_{80}$) is a well known phenomenon which has been extensively observed and characterized. This peculiar magnetic configuration appears only in films with a thickness above a critical value ($d_{cr}$), which is strongly determined by the sputtering conditions (i.e. deposition rate, temperature, magnetic field). So far, $d_{cr}$ has usually been presented as the boundary between the homogeneous (H) and stripe-domains (SD) regime, respectively below and above $d_{cr}$. In this work we study the transition from the H to the SD regime in thin films and microstructured bridges of Py with different thicknesses. We find the…