Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
Magnetic Coupling in Y3Fe5O12/Gd3Fe5O12 Heterostructures
2021
Ferrimagnetic ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low damping. By substituting the yttrium with rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$/${\mathrm{Gd}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ (YIG/GIG) heterostructures grown by pulsed laser deposition. From bulk sensitive magnetometry and surface sensitive spin Seebeck effect and spin Hall magnetoresistance measurements, we determine the alignment of the heterostruct…
High-spin polarization of Heusler alloys
2006
Fermi surface of a half-metal compound with cubic Fm–3m symmetry: Heusler alloy or double perovskite.The inset shows the spin resolved density of state for a CCFA Heusler compound. ( This illustration appears on the cover of the print edition. ) This cluster issue of Journal of Physics D: Applied Physics is devoted to magnetic Heusler alloys. This class of materials is currently considered to contain the most attractive half-metallic ferromagnets due to their high Curie temperatures and their structural relation to conventional semiconductors. The first compound to be identified as a half-metallic ferromagnet, by de Groot et al back in 1983, was the half-Heusler alloy NiMnSb. After a period…
Introduction to Self-Assembled Monolayers
2015
One of the most exciting targets of molecular spintronics field is to go towards multifunctional devices where the properties can be accurately controlled and actively changed. Spin dependent hybridization at the metal/molecule interface could thus be used in the tailoring of the resistive and magnetoresistive response of spintronic devices exploiting chemistry versatility. In this new direction, Self-Assembled Monolayers (SAMs) appear as highly promising candidates since each part and function of this system can be modulated independently (like a molecular LEGO building unit). Despite highly promising, they are still scarcely investigated in the literature probably due to the difficulties …
Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications
2011
In this paper we report a current-to-time converter (CTC) suitable for current sensor monitoring in low power applications. Based on a discrete resistence-to-frequency converter and a Giant MagnetoResistance (GMR) current sensor. Simulations have been done using a quasi-static electrical Verilog-A model for the GMR current sensor. A reduced set of parameters has been extracted to characterize the GMR sensor's behavior. The application has been analyzed making use of different sensors, whose device parameters were previously extracted. Finally, the accuracy of the models has been tested by comparing with experimental transient measurements.
Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO 3
2019
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO3(1 1 0) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO3/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic fields, suggesting that field-induced canting of …
Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature
2017
We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex an…
Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts
2013
We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect. DOI: 10.1103/PhysRevLett.110.067203
Giant Negative Magnetoresistance in GdI2: Prediction and Realization
1999
The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ≈70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculat…
Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits
2021
Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.
Solid-State Analog of an Optical Interferometer
2004
To some extend one may treat a metal ring with two probes as a solid-state analog of an optical interferometer. One node can be considered as a beam splitter (bi-prism, for example), and the electric current at the other node as an equivalent to a light intensity of an interference pattern formed at a screen. In optics, to obtain a stationary pattern one should use a monochromatic source of radiation, as afterwards in a conventional passive media (i.e. air) the phase of the radiation is preserved. On the contrary, in solids the phase of a conducting electron wavefunction is randomly altered due to inelastic collisions (mainly phonons at high temperatures). Hence, to satisfy the condition of…