Search results for "MAGNETORESISTANCE"

Adiabatic quantum pumping, magnification effects and quantum size effects of spin-torque in magnetic tunnel junctions

2010

We study the adiabatic quantum pumping and quantum size effects of spin-torque in a magnetic tunnel junction within a scattering matrix approach. Quantum size effects are predicted in the presence of a dc bias as a function of the thickness of the normal metal layer inserted between two magnetic layers and of the fixed magnetic layer. In the presence of ac voltages, the results for the spin-torque show a peculiar magnification effect and advantages of spin-torque pumping in actual devices are also discussed.

Modification of magnetic anisotropy in Ni thin films by poling of (011) PMN-PT piezosubstrates

2016

ABSTRACTThis study reports the magnetic and magnetotransport properties of 20 nm thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, is found to depend on the polarization state of the piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by a factor of 12 at room temperature and a factor of 21 at 50 K for the current direction along the PMN-PT [100] direction, and slightly increases for the [01] current direction. Simultaneously, a strong increase in the …

Exchange bias in epitaxial Mn2Au (0 0 1)/Fe (0 0 1) bilayers

2019

Tailoring large magnetoresistance in Dirac semimetal SrIrO3 films

2021

Perovskite SrIrO3 is a special Dirac material with fascinating effects due to its strong electron correlation and spin–orbit coupling. In this work, a large magnetoresistance (MR) was observed not only in epitaxial SrIrO3 films but also in a SrIrO3/PbZr0.2Ti0.8O3 epitaxial heterostructure with a magnetic field applied perpendicular to the external electric field. The magnetoresistance of SrIrO3 (10 nm) and SrIrO3/PbZr0.2Ti0.8O3 (10 nm/30 nm) reach values as large as 40% and 110% at 9 T and 5 K, respectively. We believe that the unusual magnetoresistance is from the Dirac/Weyl state. Especially, the SrIrO3/PbZr0.2Ti0.8O3 bilayer shows negative magnetoresistance with strong oscillations close…

Dimensionality of the Superconductivity in the Transition Metal Pnictide WP

2020

We report theoretical and experimental results on the transition metal pnictide WP. The theoretical outcomes based on tight-binding calculations and density functional theory indicate that WP is a three-dimensional superconductor with an anisotropic electronic structure and nonsymmorphic symmetries. On the other hand, magnetoresistance experimental data and the analysis of superconducting fluctuations of the conductivity in external magnetic field indicate a weakly anisotropic three-dimensional superconducting phase.

Magneto-Transport Results in SAM Based MTJs

2015

This chapter is dedicated to the description of the magneto-transport results obtained in LSMO/SAM/Co magnetic tunnel nanojunctions fabricated by nanoindentation lithography technique. We started by focusing on the study of LSMO/C12P/Co MTJs. This because C12P is a medium size alkyl chain: long enough to avoid short-circuits in the junction but short enough to give a device resistance in the order of few tens of MO and thus easier to measure. Next, we started to tune the molecule thickness from C10P to C18P (from 10 carbon atoms in the alkyl chain to 18). This allowed on one hand to validate our system by comparing the exponential increase of the junction resistance to the one reported in t…

Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement

2013

We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.

Preparation, scaling behavior of activation energy, Hall effect, and flux-flow anisotropy of (Hg0.9Re0.1)Ba2CaCu2O6+δHTS thin films

2004

Abstract We have prepared fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) thin films by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc=124 K with transition width ΔTc≃2 K. Conditions for reproducible film preparation have been found. The resistive transitions have been investigated in magnetic fields up to 8 T (parallel to the c-axis) and 10 T (perpendicular to the c-axis). We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. The Hall resistivity (ρxy) of HgRe-1212 superconductor thin films has been measured in the ab-plane at 8 T. In the mixed state a power-law beha…

Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions

2014

Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…

Reduction of the uncertainty in the measurements of magnetic fields

2014

The paper deals with magnetic field measurement, carried out by using a broadband and isotropic instrument. These measurements are characterized by a very high uncertainty values if compared with the ones usually related to other electrical measurements. For these reasons, if the measurements are performed to assess the exposure of human beings, these large uncertainty values imply a high risk of wrong decision when there is the need to establish if a site complies or does not comply with a specified emission limits. A reduction of the uncertainty values implies a reduction of the risk. With this aim, we propose an approach which, in particular but very typical cases, allows an effective re…