Search results for "MATERIA"
showing 10 items of 33501 documents
Negative differential resistance and threshold-switching in conical nanopores with KF solutions
2021
Negative differential resistance (NDR) phenomena are under-explored in nanostructures operating in the liquid state. We characterize experimentally the NDR and threshold switching phenomena observed when conical nanopores are immersed in two identical KF solutions at low concentration. Sharp current drops in the nA range are obtained for applied voltages exceeding thresholds close to 1 V and a wide frequency window, which suggests that the threshold switching can be used to amplify small electrical perturbations because a small change in voltage typically results in a large change in current. While we have not given a detailed physical mechanism here, a phenomenological model is also includ…
The role of disorder on Er3+ luminescence in Na1/2Bi1/2TiO3
2018
Abstract Photoluminescence in Er-doped NBT is studied at different temperatures. Remarkable reduction of the luminescence intensity in the green spectral range is found in the poled state comparing with the depoled state. Luminescence spectra at low temperatures reveal continuous wavelength shift of some maxima belonging to the 4 S 3/2 → 4 I 15/2 transition depending on the excitation wavelength, which is explained by large variety of different environments around Er 3+ related to the random distribution of Na + and Bi 3+ in A-sublattice of the ABO 3 perovskite structure. Poling extends the wavelength range where shift of luminescence maxima is observed in the direction of longer excitati…
Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface …
2018
In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular…
Aqueous Corrosion of the GeSe4 Chalcogenide Glass: Surface Properties and Corrosion Mechanism
2009
International audience; The aqueous corrosion behavior of the GeSe4 glass composition has been studied over time under various conditions (temperature and pH). The evolution of the surface topography by atomic force microscopy and properties such as surface hardness and reduced modulus, as well as the optical transmission in the 1-16 μm window, have been measured as a function of time spent in the corrosive solution. It was found that even if the glass reacts at room temperature, its optical transparency was barely affected. Nevertheless, the durability of GeSe4 was found to be drastically affected by an increase of both temperature and pH. Furthermore, pure selenium nanoparticles were form…
Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)
2018
Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…
Localized domain wall nucleation dynamics in asymmetric ferromagnetic rings revealed by direct time-resolved magnetic imaging
2016
We report time-resolved observations of field-induced domain wall nucleation in asymmetric ferromagnetic rings using single direction field pulses and rotating fields. We show that the asymmetric geometry of a ring allows for controlling the position of nucleation events, when a domain wall is nucleated by a rotating magnetic field. Direct observation by scanning transmission x-ray microscopy (STXM) reveals that the nucleation of domain walls occurs through the creation of transient ripplelike structures. This magnetization state is found to exhibit a surprisingly high reproducibility even at room temperature and we determine the combinations of field strengths and field directions that all…
Interface evolution during magnetic pulse welding under extremely high strain rate collision: mechanisms, thermomechanical kinetics and consequences
2020
Abstract Magnetic pulse welding enables to produce perplexing interfacial morphologies due to the complex material response during the high strain rate collision. Thus, a thermomechanical model is used in this study to investigate the formation mechanism of the wake, vortex, swirling and mesoscale cavities with the increase of the impact intensity at the interface. The formation of these interfacial features are difficult to characterize by insitu methods, thus the origin of phenomena still remain a subject of open discussion. Our studies identify the governing mechanisms and the associated thermomechanical kinetics, which are responsible for the formation mechanism of interfacial features.…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…