Search results for "MOBILITY"

Student Mobility as a Strategy of Increasing Competitiveness on the Global Labor Market – An Attempt to Diagnose Educational Mobility: The Case of Po…

2022

PURPOSE: The aim of the article is the identification and the assessment of the state, and the conditions for the participation of higher education units in Poland in the process of educational mobility in terms of the competitiveness of graduates.

Reciprocal regulation of the human sterol regulatory element binding protein (SREBP)-1a promoter by Sp1 and EGR-1 transcription factors.

2007

AbstractSterol regulatory element binding protein (SREBP)-1a is a transcription factor that is highly expressed in actively growing cells, and is involved in the biosynthesis of cholesterol, fatty acids and phospholipids. We have mapped the minimal human SREBP-1a promoter region to 75bp upstream of the translation start site where we discovered a functional role for the 3 GC-boxes containing overlapping sites for the Sp1 and EGR-1 transcription factors. Intact SP1-binding sites are essential for promoter activity, whereas EGR-1 suppresses the transcription of the human SREBP-1a promoter. These results reveal a novel physiologically relevant transcriptional mechanism for the reciprocal regul…

Switching Capacitors Transformerless Bidirectional DC-DC Converter

2020

This paper presents an innovative converter topology that better connects the needs of the battery pack and the electric motor towards the validation of an eco-sustainable electric mobility model. More in particular, the components of the proposed converter change their connection state during both the charging and discharging time of the battery, leading to a higher performance with respect to traditional step-down or step-up converters. The simulations carried out by means of the PLECS® environment have demonstrated the early feasibility of the proposed system.

Tuning the semiconducting nature of bis(phthalocyaninato) holmium complexes via peripheral substituents

2012

The semiconducting properties of the heteroleptic and homoleptic bis(phthalocyaninato) holmium complexes bearing electron-withdrawing phenoxy substituents at the phthalocyanine periphery, namely Ho(Pc)[Pc(OPh)8] (1) and Ho[Pc(OPh)8]2 (2) [Pc = unsubstituted phthalocyaninate; Pc(OPh)8 = 2,3,9,10,16,17,23,24-octaphenoxyphthalocyaninate] have been investigated comparatively. Using a solution-based Quasi–Langmuir–Shafer (QLS) method, the thin solid films of the two compounds were fabricated. The structure and properties of the thin films were investigated by UV-vis absorption spectra, X-ray diffraction (XRD) and atomic force microscopy (AFM). Experimental results indicated that H-type molecular…

Measurement of drift mobilities in amorphous organic films using the Time of Flight method

2004

We apply the Time of Flight (TOF) technique to study carrier mobility in N, N’-diphenyl-N,N’-bis(3-methylphenyl) -1,1-biphenyl-4,4’-diamine (TPD) and tris(8-hydroxyquinolato) aluminium (Alq 3 ). These materials are two examples of, respectively, hole and electron transporting molecular materials. Measurements are performed in free air or under vacuum varying the experimental parameters such as laser pulse intensity and single shot irradiation. We observe a transition from dispersive to non dispersive transport changing the experimental conditions.

Analysis of self-trapped hole mobility in alkali halides and metal halides

2017

Support from Latvian National Research Program IMIS2 (2014–2017) and LZP Grant No. 237/2012 (2013–2016) is greatly appreciated.

Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure

1997

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.

High-Temperature Hall Measurements on BaSnO3Ceramics

2005

Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO3ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.

Transient photoconductivity in a discotic hexagonal plastic crystal

1996

Location of holes in silicon-rich oxide as memory states

2002

The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …