Search results for "MOCVD"

showing 10 items of 28 documents

Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…

2007

International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…

Materials scienceThickness measurementSiliconPhotoemission spectroscopyAnalytical chemistrychemistry.chemical_elementARXPS02 engineering and technologySubstrate (electronics)Chemical vapor deposition01 natural sciences0103 physical sciencesMaterials ChemistryTiO2Metalorganic vapour phase epitaxyThin filmThin filmSilicon oxide010302 applied physicsMetals and AlloysSurfaces and InterfacesInterface021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMOCVD0210 nano-technologyLayer (electronics)
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High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

2004

ABSTRACTSolar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack formation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and improve the spectral rejection ratio, which is a key factor for solar blind detection. As a result, a rejection ratio of 5 decades between the UV (below 300 nm) and 400 nm, and a steep…

Materials sciencebusiness.industryAlloyDetectorPhase (waves)Schottky diodeengineering.materialEpitaxySettore ING-INF/01 - ElettronicaGanCondensed Matter::Materials ScienceOpticsSolar-blind detectors MBE MOCVD AlGaNengineeringOptoelectronicsMetalorganic vapour phase epitaxybusinessNoise-equivalent powerMolecular beam epitaxyMRS Proceedings
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Opportunity of metallic interconnects for ITSOFC : Reactivity and electrical property.

2006

International audience; Iron-base alloys (Fe-Cr) are proposed hereafter as materials for interconnect of planar-type intermediate temperature solid oxide fuel cell (ITSOFC); they are an alternative solution instead of the use of ceramic interconnects. These steels form an oxide layer (chrornia) which protects the interconnect from the exterior environment, but is an electrical insulator. One solution envisaged in this work is the deposition of a reactive element oxide coating, that slows down the formation of the oxide layer and that increases its electric conductivity. The oxide layer, formed at high temperature on the uncoated alloys, is mainly composed of chromia; it grows in accordance …

Materials scienceoxidationChromia-forming alloy; Electrical resistivity; MOCVD; Oxidation; Screen-printing; SOFC interconnect; Renewable Energy Sustainability and the Environment; Energy Engineering and Power Technology; Physical and Theoretical Chemistry; Electrical and Electronic EngineeringAlloyOxideEnergy Engineering and Power Technology02 engineering and technologyengineering.material010402 general chemistry01 natural scienceschemistry.chemical_compoundElectrical resistance and conductanceCoatingchromia-forming alloyElectrical resistivity and conductivitySOFC interconnectRenewable EnergyCeramicElectrical and Electronic EngineeringPhysical and Theoretical ChemistryComposite materialSustainability and the EnvironmentRenewable Energy Sustainability and the EnvironmentMetallurgy[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyscreen-printingChromia0104 chemical sciences[CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistrychemistry13. Climate actionvisual_art[ CHIM.MATE ] Chemical Sciences/Material chemistry[ CHIM.THEO ] Chemical Sciences/Theoretical and/or physical chemistryMOCVDengineeringvisual_art.visual_art_mediumSolid oxide fuel cell0210 nano-technologyelectrical resistivity
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Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays

2010

A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays. (C) 2010 Elsevier B.V. All rights reserved.

Materials sciencezinc oxide; Nanowires and nanohole arrays; Colloidal lithographyMetals and AlloysNanowirezinc oxideNanotechnologyZnO; Catalyst; Nanowires; Nanohole array; Colloidal lithography; MOCVDSurfaces and InterfacesChemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCatalysisNanowireNanohole arrayScientific methodProcess integrationMOCVDMaterials ChemistryNanowires and nanohole arraysZnOColloidal lithographyMetalorganic vapour phase epitaxyCatalystThin filmLithography
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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

2006

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es

PhotoluminescenceMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaEdge regionAnalytical chemistrySemiconductor thin filmsGeneral Physics and AstronomyPositron annihilation spectroscopyCondensed Matter::Materials Science:FÍSICA [UNESCO]Zinc compoundsMetalorganic vapour phase epitaxyDeposition (law)Positron annihilationCondensed matter physicsCondensed Matter::OtherPhysicsWide-bandgap semiconductorpositron annihilationUNESCO::FÍSICACacancies (crystal)II-VI semiconductorsWide band gap semiconductorsZn vacanciesMOCVDSapphireZnOphotoluminescenceZinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD
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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000

Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…

PhotoluminescenceMaterials scienceIII-V semiconductorsScanning electron microscopeAnalytical chemistryGeneral Physics and AstronomySemiconductor thin filmsChemical vapor depositionStacking faultsSurface topographysymbols.namesake:FÍSICA [UNESCO]MagnesiumGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Magnesium ; Semiconductor thin films ; MOCVD coatings ; Scanning electron microscopy ; Raman spectra ; Photoluminescence ; Surface composition ; Surface topography ; Stacking faults ; Inclusions ; ExcitonsPhotoluminescenceWurtzite crystal structureDopingUNESCO::FÍSICAGallium compoundsWide band gap semiconductorsMOCVD coatingsSurface compositionInclusionssymbolsSapphireExcitonsRaman spectraRaman spectroscopyScanning electron microscopyStacking fault
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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Fabrication and characterisation of ZnO nanostructures: from nanoscale building blocks to hybrid nanomaterials - towards emerging technologies in sen…

2012

Metal oxide nanostructures characterized by multiple morphologies and structures are at the forefront of applications driven nanotechnology research. In particular, they represent a versatile solution for performance enhancement and applications in multifunctional devices and offer distinct advantages over their bulk counterparts. The current state in ZnO nanomaterials research and its impact in nanotechnology and modern engineering are discussed through the lens of con-tinuing technological advances in synthetic techniques allowing to obtain the material with predefined specific set of criteria including size, functionality, and uniqueness. Aim of this research activity is fabrication and …

Zinc oxide MOCVD Chemical Bath Deposition Electrospinning Nanosphere Colloidal Lithography nanorods FRAP sensing protein immobilizationArea 03 - Scienze chimicheZnO colloidal nanolithography MOCVD sensing chemical bath deposition
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Evaluation d'alliages métalliques commerciaux pour les interconnecteurs de piles à combustibles de type SOFC.

2006

Les travaux effectués sur les interconnecteurs métalliques dans les piles à combustibles à électrolyte solide (SOFC), ont montré que les alliages chromino-formeurs sont les meilleurs candidats [ ]. Cependant, à haute température, ces alliages forment une couche de Cr2O3 qui est isolante et qui peut se transformer en espèces volatiles (CrO3 ou CrO2(OH)2) entrainant ainsi la dégradation de la pile [ ]. L'utilisation d'éléments réactifs tels que les éléments du début de la famille des lanthanides et l'yttrium est connue pour améliorer à la fois la résistance à l'oxydation et la conductivité électrique [ ]. C'est la raison pour laquelle, dans cette étude, un revêtement de La2O3 a été déposé sur…

[CHIM.INOR] Chemical Sciences/Inorganic chemistryInterconnecteurs métalliquesMOCVD[ CHIM.INOR ] Chemical Sciences/Inorganic chemistrySOFC[CHIM.INOR]Chemical Sciences/Inorganic chemistry
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On the Effect of Surface Treatment to Improve Oxidation Resistance and Conductivity of Metallic Interconnects for SOFC in Operating Conditions

2008

International audience; Due to the reduction of operating temperature from 1000°C to 800°C, chromia forming alloys are the best candidates for interconnects in Solid Oxide Fuel Cells (SOFCs). These interconnects have to be operational in service conditions, at 800°C in air (cathode side) and in humidified hydrogen (anode side). The performance of the interconnect stainless steels is limited by the oxide scale formation (chromia), the low electronic conductivity of this scale and the possible volatility of chromium oxides. In the field of high temperature oxidation of metals, it is well known that the addition of a nanometric layer made of reactive element oxide such as, La2O3, Nd2O3 and Y2O…

[CHIM.INOR] Chemical Sciences/Inorganic chemistryMaterials scienceOxide02 engineering and technologyChemical vapor deposition[CHIM.INOR]Chemical Sciences/Inorganic chemistryConductivityengineering.material01 natural sciencesCorrosionlaw.inventionchemistry.chemical_compoundCoatinglaw0103 physical sciencesGeneral Materials ScienceSOFC010302 applied physicsreactive elementinterconnectMechanical EngineeringMetallurgy[ CHIM.INOR ] Chemical Sciences/Inorganic chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsChromiaCathodeAnodechemistryMechanics of MaterialsMOCVDengineering0210 nano-technologyMaterials Science Forum
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