Search results for "Measurement"
showing 10 items of 2918 documents
Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$
2020
This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Initial light-induced degradation study of multicrystalline modules made from silicon material processed through different manufacturing routes
2012
The paper presents results of initial lightinduced degradation (LID) of multicrystalline silicon photovoltaic (PV) modules made of crystalline silicon from different manufacturing processes. The modules were installed within the Sunbelt, in Hyderabad, India. Current-voltage (I–V) characteristics are measured and infra-red (IR) images of the modules are taken at regular intervals. A relationship of the IV degradation with the IR images is discussed. Results from laboratory LID tests at room temperature are performed parallel to the outdoor degradation of PV modules. It was found that the total LID, measured on the module level, after the initial 40 hours is similar for both materials resulti…
Optical activation of a silicon vibrating sensor
1986
The operation of a micromachined silicon vibrating sensor with both optical excitation and optical interrogation is reported. The proper locations at which the optical excitation should be applied for optimum excitation of different modes of resonance are described.
Interfacial reaction during MOCVD growth revealed by in situ ARXPS.
2006
International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …
Influence on PD Parameters due to Voltage Conducted Disturbances
2004
In the standard specification of ac dielectric-characteristic measurements of insulating materials, test voltage is prescribed as "approximately sinusoidal" when the highest acceptable deviation of the HV waveform, from the correct sinusoidal shape, is limited to a /spl plusmn/5% tolerance range of the crest factor value. In the field of partial discharge (PD) measurements and their statistical data processing, on which forecasts of long term behavior of components and their reliability are currently carried out, the results of elaborations depend on the voltage wave shape. In this paper, the errors in PD measurements, evaluated at industrial frequencies, due to applied voltages distorted b…
Effects of Different Test Setups on the Experimental Tensile Behaviour of Basalt Fibre Bidirectional Grids for FRCM Composites
2020
Fibre-reinforced cementitious matrix (FRCM) composites have been effectively used during the last ten years for the strengthening of existing concrete and masonry structures. These composite materials are made of medium- and high-strength fibre meshes embedded in inorganic matrices. Synthetic fibres are the ones that are currently the most used
Temperature Measurements as a Method for Monitoring Ropes
2020
Due to an increasing demand for operation at sea depths as low as 3000 m and under, the use of fibre ropes for offshore application in deep sea lifting and mooring is increasing. Consequently, improved knowledge is required regarding these ropes’ thermo-mechanical properties and how these properties change as the rope is being used. This paper presents a 2D model of heat transport in the axial and radial directions along a 28 mm diameter fibre rope typically used for offshore applications. The model is combined with temperature measurements during heating and cooling of the rope, using both thermocouples and a thermal camera. Measurements are performed both on a new rope and on a used that …
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics
2013
Laser irradiation of ZnO:Al/Ag/ZnO:Al transparent contacts is investigated for segmentation purposes. The quality of the irradiated areas has been experimentally evaluated by separation resistance measurements, and the results are complemented with a thermal model used for numerical simulations of the laser process. The presence of the Ag interlayer plays two key effects on the laser scribing process by increasing the maximum temperature reached in the structure and accelerating the cool down process. These evidences can promote the use of ultra-thin ZnO:Al/ Ag/ZnO:Al electrode in large-area products, such as for solar modules. © 2013 Crupi et al.; licensee Springer.